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Diodes Incorporated DMC6070LFDH-7
- Part No.:
- DMC6070LFDH-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN
- Datasheet:
-
DMC6070LFDH-7.pdf
- Description:
- MOSFET N/P-CH 60V 3.1A 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,364
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Product details
Overview
DMC6070LFDH-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single V-DFN3030-8 package, integrating one 60V/3.1A N-channel and one –60V/–2.4A P-channel MOSFET. It delivers low RDS(on) (85 mΩ @ 10V for Q1; 150 mΩ @ –10V for Q2), fast switching (tD(off) = 61 ns / 79.8 ns), and low input capacitance (Ciss = 731 pF / 612 pF), enabling high-efficiency power management in space-constrained DC-DC converters and analog switches.
For engineers reviewing the DMC6070LFDH-7 datasheet, DMC6070LFDH-7 pinout, DMC6070LFDH-7 application, or DMC6070LFDH-7 equivalent, key selection criteria include dual-channel complementary operation, thermal resistance (RθJA = 91 °C/W), AEC-Q101 qualification, RoHS/Green compliance, and V-DFN3030-8 footprint compatibility with high-density PCB layouts.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common thermally optimized V-DFN3030-8 leadless package. Each channel features isolated gate control, body diode integration (VSD = 0.7–1.2 V / –0.7 to –1.2 V), and gate threshold voltages of 1–3 V (Q1) and –1 to –3 V (Q2), supporting standard logic-level drive without level-shifting circuitry.
Thermal design relies on junction-to-ambient conduction through the exposed thermal pad (RθJA = 91 °C/W on FR-4 with 2 oz copper), while dynamic performance is enabled by low gate charge (Qg = 11.5 nC / 8.9 nC at ±10 V) and minimal reverse transfer capacitance (Crss = 23 pF / 26 pF), reducing Miller-induced switching losses in synchronous buck and H-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V (Q1), –60 V (Q2): Supports 24–48 V bus rail switching without derating in industrial power supplies. |
| RDS(on) max | 85 mΩ @ 10 V (Q1), 150 mΩ @ –10 V (Q2): Enables <1.2 W conduction loss at 3 A, critical for thermally limited modules. |
| ID continuous | 3.1 A (Q1), –2.4 A (Q2) at 25°C: Sustains peak load currents in compact load switches and motor drivers. |
| Ciss | 731 pF (Q1), 612 pF (Q2): Reduces gate drive power and enables >1 MHz PWM operation with low-voltage drivers. |
| tD(off) | 61 ns (Q1), 79.8 ns (Q2): Limits dead-time requirements in synchronous rectification, improving efficiency above 90%. |
| RθJA | 91 °C/W: Requires ≥1 in² 2 oz copper pour for ≤100°C junction rise at full power in ambient air. |
| AEC-Q101 | Qualified: Validated for automotive body electronics including door modules and lighting control units. |
Pinout & Package
Package: V-DFN3030-8 - 3.0 × 3.0 mm, 0.8 mm height, thermally enhanced leadless package with exposed thermal pad (pin #8). Compliant with IPC-7351B SOIC-8 variant footprint standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 (N-channel) | Low-side return path; electrically tied to thermal pad for optimal heat dissipation. |
| G1 | Gate of Q1 (N-channel) | Logic-level input (1–3 V threshold); requires <12 nC total charge for full turn-on. |
| S2 | Source of Q2 (P-channel) | High-side reference node; polarity-sensitive connection for complementary switching. |
| G2 | Gate of Q2 (P-channel) | Negative logic input (–1 to –3 V threshold); driven low to activate P-FET. |
| D1 | Drain of Q1 (N-channel) | Switched output node; shares drain routing with D2 for half-bridge configuration. |
| D2 | Drain of Q2 (P-channel) | Complementary switched output; forms common-drain topology with D1. |
| COM | Exposed thermal pad | Must be soldered to PCB ground plane for thermal and EMI performance; not electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pair integration | Single-package N+P MOSFET eliminates layout mismatch, timing skew, and board area vs. discrete solutions. |
| Low RDS(on) at 4.5 V | 120 mΩ (Q1) / 250 mΩ (Q2): Enables direct interfacing with 3.3 V microcontrollers without gate drivers. |
| Fast switching with low Crss | 23 pF / 26 pF: Minimizes voltage-dependent gate charge, reducing shoot-through risk in bridge circuits. |
| AEC-Q101 qualification | Validated for automotive temperature range (–55°C to +150°C) and mechanical stress per JESD22 standards. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb: Meets EU ELV Directive and OEM green material requirements. |
Applications
| USB Power Delivery Switch | Automotive Door Module |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power path control between USB-C host and peripheral with overcurrent protection. IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS sourcing/sinking via complementary N/P FETs with matched timing. Use Value: Eliminates need for external level shifters and reduces BOM count by 2 devices versus discrete implementation. |
Use Scenario: Window lift/lower and mirror fold/unfold actuation using 12 V battery supply. IC Role / Device Role / Timing Role: Half-bridge driver controlling brushed DC motor direction with integrated body diodes for flyback energy recirculation. Use Value: AEC-Q101 rating ensures reliability across –40°C to +105°C ambient; low RDS(on) limits heat buildup during stall conditions. |
| Industrial PLC I/O Module | Smart Lighting Driver |
|
Use Scenario: Isolated digital output stage driving 24 V solenoids or relays in programmable logic controllers. IC Role / Device Role / Timing Role: High-side (Q2) and low-side (Q1) switch enabling push-pull output with fast turn-off (<80 ns) to prevent contact arcing. Use Value: 60 V rating accommodates 24 V system transients up to 40 V; low leakage (<1 μA) ensures stable off-state in long-duration hold applications. |
Use Scenario: Dimmable LED driver with PWM-controlled current regulation in architectural lighting fixtures. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, where Q1 handles main current and Q2 provides freewheeling path. Use Value: Low Ciss and fast tr/tf enable 500 kHz–1 MHz operation, shrinking inductor size by 40% vs. Schottky-based designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Lower voltage (30 V), higher current (5.8 A / –4.2 A), larger SO-8 package (RθJA = 62 °C/W). | Better suited for 12 V systems requiring higher current density; unsuitable for 48 V rails due to VDSS limit. | Select when thermal budget allows SO-8 and system voltage ≤30 V; avoid for space-constrained 48 V designs. |
| SI6926ADQ-T1-GE3 | Same 60 V rating but asymmetric RDS(on) (50 mΩ / 110 mΩ); no AEC-Q101 qualification; TSSOP-8 package. | Lacks automotive qualification and thermal performance (RθJA = 100 °C/W); higher gate charge asymmetry increases dead-time tuning complexity. | Acceptable for commercial-grade 48 V DC-DC where AEC-Q101 is not required; verify layout thermal margin. |
Compared with DMC6070LFDH-7, DMC2038LSD-7 trades voltage headroom for higher current and better thermal dissipation in larger packages, while SI6926ADQ-T1-GE3 sacrifices automotive reliability and thermal efficiency for lower RDS(on) in cost-sensitive non-automotive applications.
Availability
DMC6070LFDH-7 is available at Aetrix Electronics and suitable for USB Power Delivery switches, automotive door modules, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant discrete power switching.
Supply support for DMC6070LFDH-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMC6070LFDH-7 belongs to Diodes' POWERDI® family of leadless power MOSFETs, engineered specifically for space-constrained, high-efficiency power conversion where thermal performance and AEC-Q101 compliance are mandatory.
FAQ
Is DMC6070LFDH-7 recommended for new designs?
No - Diodes Incorporated explicitly labels this part as "Not recommended for new design" in its datasheet (DS36083 Rev. 7-3). It remains available for legacy program support and last-time buy scenarios, but engineers should evaluate qualified alternatives like DMC2038LSD-7 or newer POWERDI-1230 offerings for new projects requiring extended lifecycle assurance.
How is thermal management implemented in the V-DFN3030-8 package?
The V-DFN3030-8 package uses an exposed thermal pad (pin #8) that must be soldered directly to a minimum 1 in² copper pour on the PCB's inner or bottom layer. With 2 oz copper and thermal vias, it achieves RθJA = 91 °C/W; omitting the pad or undersizing the copper increases junction temperature by >40°C at rated power, risking thermal shutdown or parametric drift.
Can DMC6070LFDH-7 operate with 3.3 V logic-level gate drive?
Yes - both channels specify gate thresholds within 1–3 V (Q1) and –1 to –3 V (Q2), and RDS(on) is characterized at 4.5 V (120 mΩ / 250 mΩ). At 3.3 V, Q1 delivers ~2.2 A and Q2 ~–1.5 A continuous, sufficient for low-duty-cycle loads like LED drivers or sensor interface switches, though conduction loss rises ~35% versus 4.5 V drive.
What is the significance of the "C60 YYWW" marking on the device bottom?
"C60" is the product type code identifying the DMC6070LFDH-7 die set; "YYWW" is the date code where YY = last digit of year (e.g., "24" = 2024) and WW = week number (01–53). This marking enables full traceability to wafer lot, assembly batch, and test data per Diodes' quality management system, critical for automotive and industrial audits.
DMC6070LFDH-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A, 2.4A
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 731pF @ 20V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3030-8
DMC6070LFDH-7 FAQ
1.How can I place an order for DMC6070LFDH-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC6070LFDH-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC6070LFDH-7 reliable?
The price and inventory of DMC6070LFDH-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC6070LFDH-7 is usually 5 days.
3.What payment methods are accepted for DMC6070LFDH-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC6070LFDH-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC6070LFDH-7?
DMC6070LFDH-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC6070LFDH-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC6070LFDH-7?
For technical support, including DMC6070LFDH-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC6070LFDH-7 requirements.
6.How does Aetrix verify that DMC6070LFDH-7 is sourced from the original manufacturer or authorized distributors?
All DMC6070LFDH-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC6070LFDH-7 meets industry standards.
7.What is the process for return or replacement of DMC6070LFDH-7?
All DMC6070LFDH-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC6070LFDH-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC6070LFDH-7 part is unused and in its original packaging.
Return procedure for DMC6070LFDH-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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