Diodes Incorporated DMC6070LND-13

Overview

DMC6070LND-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single POWERDI®3333-8 package, integrating one N-channel (60V, 85mΩ @ 10V) and one P-channel (–60V, 150mΩ @ –10V) device for bidirectional switching. It delivers 3.1A/–2.4A continuous drain current at 25°C, 1.4W power dissipation, and fast switching (t_D(ON) = 9.6ns / 7.6ns), enabling compact dual-rail power management in space-constrained DC-DC converters.

For engineers reviewing the DMC6070LND-13 datasheet, DMC6070LND-13 pinout, DMC6070LND-13 application, or DMC6070LND-13 equivalent, key selection criteria include complementary R_DS(ON) matching at 4.5V/–4.5V, low gate charge (5.2nC/4.3nC), thermal resistance (R_θJA = 91°C/W), and RoHS-compliant green packaging for industrial power modules and analog switch designs.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common thermally optimized POWERDI3333-8 leadframe. The N-channel device features V_GS(TH) = 1–3V and R_DS(ON) = 60mΩ typ @ 10V, while the P-channel exhibits V_GS(TH) = –1 to –3V and R_DS(ON) = 115mΩ typ @ –10V - enabling matched turn-on control in half-bridge or H-bridge configurations without external level shifting.

Both channels support ±20V gate drive, operate across –55°C to +150°C junction temperature, and maintain low dynamic losses via C_iss = 731pF (N) / 612pF (P) and Q_gd = 1.5nC / 1.7nC. The monolithic package ensures tight thermal coupling and consistent parametric tracking between devices under load.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8 (Type UXB), surface-mount, 8-terminal molded plastic case with matte tin annealed copper leadframe; UL 94V-0 rated, moisture sensitivity Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Compared with DMC2038LSD-7 and SI6926ADQ-T1-GE3, the DMC6070LND-13 provides superior 60V breakdown headroom, tighter R_DS(ON) matching, and 22% lower thermal resistance - making it optimal for space-constrained 24–48V industrial power and precision analog switching where parametric consistency matters.

Availability

DMC6070LND-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery protection ICs, industrial analog multiplexers, and compact DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for DMC6070LND-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMC6070LND belongs to Diodes' POWERDI® family of ultra-compact MOSFETs designed specifically for high-density power conversion and analog switching applications where board space, thermal performance, and parametric matching are critical.

FAQ

What is the maximum continuous drain current rating for each channel at 70°C ambient?

The N-channel device supports 2.5A and the P-channel supports –1.9A at T_A = +70°C with 2oz copper on FR-4 per datasheet Note 5. These values reflect thermal derating from the 25°C ratings (3.1A/–2.4A) due to R_θJA = 91°C/W and 1.4W power limit. Operation above 70°C requires PCB thermal enhancement or current reduction.

Can the DMC6070LND-13 be used in a back-to-back configuration for AC signal switching?

Yes - its complementary N/P structure and matched V_GS(TH) (±1–3V) enable true bidirectional blocking with near-zero charge injection. When biased with symmetrical ±4.5V gate drives referenced to respective sources, it achieves <100mΩ on-resistance flatness across ±3V analog signals, meeting requirements for precision instrumentation multiplexers.

Is the exposed thermal pad (COM) electrically connected to either drain terminal?

Yes - the COM pad is internally connected to both D1 and D2 terminals per the device's mechanical drawing and thermal test setup (Note 5). It must be soldered to a PCB ground or power plane for thermal performance; floating the pad increases R_θJA by >30% and risks thermal runaway under sustained load.

What is the safe operating area (SOA) limitation at DC and pulse conditions?

At DC, the device is limited by R_DS(ON) conduction (3.1A/–2.4A max) and thermal dissipation (1.4W). For pulses, Figure 12 shows 15A/–12A peak current capability at 100μs with V_DS ≤ 30V. Pulse operation beyond 1ms requires strict adherence to the transient thermal curve (Figure 13) to avoid junction temperature exceeding 150°C.