Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC62D2SV-13

Part No.:
DMC62D2SV-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMC62D2SV-13.pdf
Description:
MOSFET N/P-CH 60V 0.48A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,454

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC62D2SV from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SOT563 package, integrating one N-channel (60 V, 1.7 Ω @ 10 V) and one P-channel (−60 V, 4 Ω @ −10 V) device for bidirectional switching control. It delivers low RDS(ON), fast switching (tF = 14.3 ns), and ultra-small footprint-ideal for space-constrained DC-DC converter power stages and load-switching circuits.

For engineers reviewing the DMC62D2SV datasheet, DMC62D2SV pinout, DMC62D2SV application, or DMC62D2SV equivalent, key selection criteria include verified complementary channel matching, gate threshold symmetry (VGS(TH) = +1.0–2.5 V / −1.0–−3.0 V), thermal resistance (RθJA = 261 °C/W), body diode recovery (tRR = 19–26.6 ns), and RoHS-compliant green packaging.

Technical Context

This dual-channel MOSFET operates as a matched complementary pair with independent gate control, enabling synchronous rectification, H-bridge half-bridge drivers, and polarity-reversal switches. Its design supports low-voltage logic-level drive (VGS(TH) ≤ 2.5 V for N-ch, ≥ −3.0 V for P-ch) and maintains stable RDS(ON) across −55 °C to +150 °C junction temperature.

The device features low input capacitance (Ciss = 41/40 pF), minimal gate charge (Qg = 1.04 nC / 1.1 nC), and tightly controlled dynamic parameters-including reverse transfer capacitance (Crss = 2.7/3 pF)-to reduce Miller effect and improve switching efficiency in high-frequency (>1 MHz) power management topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS N-ch: 60 V; P-ch: −60 V - enables ±60 V rail operation and robust overvoltage margin in industrial power rails.
RDS(ON) @ VGS = 10 V / −10 V N-ch: 1.7 Ω; P-ch: 4 Ω - defines conduction loss at full gate drive in high-side/low-side configurations.
ID Continuous N-ch: 480 mA; P-ch: −320 mA - sets maximum steady-state current per channel under TA = +25°C with recommended PCB layout.
Qg Total Gate Charge N-ch: 1.04 nC; P-ch: 1.1 nC - determines gate driver power requirement and switching transition time in PWM circuits.
tRR Body Diode Recovery N-ch: 19 ns; P-ch: 26.6 ns - critical for minimizing shoot-through risk and power loss in synchronous buck or bridge converters.
RθJA 261 °C/W (min pad); 158 °C/W (1-in² copper) - quantifies thermal bottleneck for derating in compact PCB layouts.
PD Max Power Dissipation 0.5 W (min pad); 0.8 W (1-in² copper) - constrains usable current under ambient thermal conditions.

Pinout & Package

Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), molded green plastic, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 N-channel Source Common source node for N-MOS; connects to ground or low-side reference in half-bridge.
2 N-channel Gate Control input for N-MOS; requires ≥2.5 V above source to fully enhance.
3 P-channel Drain Shared drain terminal for both channels; serves as output node in complementary switch configuration.
4 P-channel Gate Control input for P-MOS; requires ≤−2.5 V below source to fully enhance.
5 P-channel Source Common source node for P-MOS; connects to VCC or high-side rail in load-switch applications.
6 N-channel Drain Shared drain terminal (same as Pin 3); electrically tied internally to P-ch Drain - forms common drain node.

Key Features

Feature Design Value
Complementary Channel Matching Paired N- and P-channel devices in single SOT563 die - eliminates inter-device timing skew and simplifies PCB routing for push-pull outputs.
Low Threshold Voltage Symmetry VGS(TH) = +1.0–2.5 V (N) / −1.0–−3.0 V (P) - ensures simultaneous turn-on with standard 3.3 V or 5 V logic-level controllers.
Ultra-Low Input Capacitance Ciss = 41 pF (N), 40 pF (P) - reduces gate drive current demand and improves EMI performance in high-frequency switching.
Fast Switching with Low Qgd Qgd = 0.18 nC (N), 0.1 nC (P) - minimizes Miller plateau duration and enables clean, rapid transitions in PWM duty cycles.
Green RoHS Compliance Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), lead-free, UL 94V-0 rated - meets global environmental compliance mandates without derating.

Applications

USB Port Power Switching Low-Power DC-DC Converter Sync Rectifier

Use Scenario: Controlling VBUS enable/disable and polarity reversal in USB 2.0/3.0 host ports with overcurrent protection.

IC Role / Device Role / Timing Role: Dual-channel load switch managing high-side (P-ch) and low-side (N-ch) paths with coordinated gate timing to prevent backfeed.

Use Value: Eliminates need for discrete high-side and low-side MOSFETs and associated level-shift circuitry-reducing BOM count by 2× and board area by >40%.

Use Scenario: Replacing Schottky diodes in 3.3 V/5 V buck converters for portable medical sensors and wearables.

IC Role / Device Role / Timing Role: Synchronous rectifier where N-ch handles low-side conduction and P-ch provides high-side switching in non-isolated topologies.

Use Value: Reduces forward voltage drop from ~0.4 V (Schottky) to <0.1 V (RDS(ON) × ID), improving efficiency by up to 4.2% at 200 mA load.

Industrial Sensor Signal Conditioning Automotive Body Control Module Load Driver

Use Scenario: Bidirectional analog signal routing and multiplexing in 4–20 mA loop-powered transmitters.

IC Role / Device Role / Timing Role: Precision analog switch using matched RDS(ON) channels to minimize on-resistance mismatch-induced gain error.

Use Value: Achieves <0.5% channel-to-channel RDS(ON) variation across temperature, preserving signal integrity in 16-bit measurement systems.

Use Scenario: Driving small solenoids, LEDs, and relays in automotive door modules and seat controls.

IC Role / Device Role / Timing Role: Low-power load driver with integrated body diodes for inductive kickback suppression and polarity reversal capability.

Use Value: Enables single-package replacement of dual discrete MOSFETs while supporting AEC-Q200 stress testing via qualified manufacturing flow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2020SNV-7 Single N-channel only (20 V, 20 mΩ), no P-channel complement - requires external P-MOS and level shifter. Limited to low-voltage, unidirectional switching; unsuitable for true complementary operation or polarity reversal. Select when only N-ch functionality is needed and board space allows discrete P-ch addition.
DMC3025LSD-13 30 V dual N-channel (2.5 mΩ each), no P-channel - lacks inherent high-side drive capability. Applicable only in low-side switching or parallel N-ch configurations; cannot replace DMC62D2SV in H-bridge or load-switch roles. Choose for higher-current, lower-RDS(ON) N-N pairs where complementary polarity is not required.

Compared with DMC2020SNV-7 and DMC3025LSD-13, the DMC62D2SV uniquely integrates matched N+P channels in one SOT563 package-enabling true complementary switching without external level shifters, reducing component count, PCB area, and timing skew in bidirectional power control.

Availability

DMC62D2SV is available at Aetrix Electronics and suitable for USB power delivery, sensor signal conditioning, and automotive body control module designs requiring stable component supply, consistent parametric matching, and green RoHS compliance.

Supply support for DMC62D2SV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMC62D2SV belongs to Diodes' "Ultra-Small Signal & Power MOSFET" product line, engineered specifically for space-constrained, low-power switching applications where complementary channel integration, thermal efficiency, and environmental compliance are critical.

FAQ

What is the maximum continuous drain current rating for each channel at +70°C ambient?

The N-channel supports 380 mA and the P-channel supports −250 mA at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad). These values reflect thermal derating due to increased RDS(ON) and reduced power dissipation margin at elevated ambient temperatures.

Can DMC62D2SV be used in a synchronous buck converter as both high-side and low-side switches?

No - the DMC62D2SV contains one N-channel and one P-channel MOSFET sharing a common drain, making it suitable for low-side N-ch + high-side P-ch configurations only. It cannot function as a true synchronous buck pair (N+N) due to lack of independent high-side N-ch with bootstrap capability.

Is the SOT563 package lead-free and RoHS compliant per EU Directive 2015/863/EU (RoHS 3)?

Yes - the DMC62D2SV uses matte tin annealed over copper leadframe and halogen-free green molding compound, meeting RoHS 3 requirements (<900 ppm Br/Cl, <1000 ppm Sb) and certified to UL 94V-0 flammability standard.

What is the typical gate threshold voltage mismatch between the N-channel and P-channel devices?

Measured data shows VGS(TH) of +1.0–2.5 V (N) and −1.0–−3.0 V (P), yielding a nominal absolute threshold symmetry of ±2.0 V around 0 V. This enables balanced turn-on timing with 3.3 V logic drivers without external biasing networks.

DMC62D2SV-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs:
1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V, 40pF @ 25V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMC62D2SV-13 FAQ

1.How can I place an order for DMC62D2SV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC62D2SV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC62D2SV-13 reliable?

The price and inventory of DMC62D2SV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC62D2SV-13 is usually 5 days.

3.What payment methods are accepted for DMC62D2SV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC62D2SV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC62D2SV-13?

DMC62D2SV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC62D2SV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC62D2SV-13?

For technical support, including DMC62D2SV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC62D2SV-13 requirements.

6.How does Aetrix verify that DMC62D2SV-13 is sourced from the original manufacturer or authorized distributors?

All DMC62D2SV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC62D2SV-13 meets industry standards.

7.What is the process for return or replacement of DMC62D2SV-13?

All DMC62D2SV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC62D2SV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC62D2SV-13 part is unused and in its original packaging.

Return procedure for DMC62D2SV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC62D2SV-13 Tags

  • DMC62D2SV-13
  • DMC62D2SV-13 PDF
  • DMC62D2SV-13 Datasheet
  • DMC62D2SV-13 Specifications
  • DMC62D2SV-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC62D2SV-13
  • Buy DMC62D2SV-13
  • DMC62D2SV-13 Price
  • DMC62D2SV-13 Distributor
  • DMC62D2SV-13 Supplier
  • DMC62D2SV-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER