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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC62D2SVQ-7

Name: DMC62D2SVQ-7
Brand: Diodes Incorporated
SKU: DMC62D2SVQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC62D2SVQ-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: DMC62D2SVQ-7.pdf

Description:: MOSFET N/P-CH 60V 0.48A SOT563

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Product details

Overview

DMC62D2SVQ-7 from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in SOT563 package, integrating one N-channel (60V, 1.7Ω @ 10V) and one P-channel (-60V, 4Ω @ -10V) device for bidirectional switching. It delivers 480mA/–320mA continuous drain current at +25°C, features low gate threshold (1.0–2.5V / –1 to –3V), and is AEC-Q101 qualified for automotive power management and analog switching functions.

For engineers reviewing the DMC62D2SVQ-7 datasheet, DMC62D2SVQ-7 pinout, DMC62D2SVQ-7 application, or DMC62D2SVQ-7 equivalent, this dual-channel discrete solution supports compact, thermally constrained designs requiring matched complementary drive, low R_DS(ON) at 4.5V/–4.5V, and PPAP-capable automotive-grade reliability.

Technical Context

This dual MOSFET integrates electrically isolated N- and P-channel channels sharing a common source configuration in a 6-pin SOT563 package. The N-channel Q1 exhibits V_GS(TH) = 1.0–2.5V and R_DS(ON) = 1.7Ω @ 10V/200mA; the P-channel Q2 has V_GS(TH) = –1 to –3V and R_DS(ON) = 4Ω @ –10V/–200mA. Both channels support ±20V gate drive and operate across –55°C to +150°C junction temperature.

Thermal performance is defined by R_θJA = 261°C/W (min pad) and 158°C/W (1-inch² copper), with total power dissipation rated at 0.5W and 0.8W respectively. Dynamic parameters include C_iss = 41/40 pF (Q1/Q2), Q_g = 1.04/1.1 nC, and t_RR = 19/26.6 ns for body diode recovery - enabling fast, low-loss switching in half-bridge and load-switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V (N-ch) / –60V (P-ch): Supports 24V automotive rail switching with 2.5× voltage margin.
R_DS(ON)	1.7Ω @ 10V (Q1), 4Ω @ –10V (Q2): Enables <100mW conduction loss at 300mA load current.
I_D Continuous	480mA (Q1), –320mA (Q2) at +25°C: Sufficient for LED drivers, sensor biasing, and low-power logic-level interfacing.
V_GS(TH)	1.0–2.5V (Q1), –1 to –3V (Q2): Ensures full enhancement with 3.3V/5V microcontroller GPIO drive.
C_iss	41pF (Q1), 40pF (Q2): Limits gate drive power and enables >1MHz switching without excessive driver stress.
t_RR	19ns (Q1), 26.6ns (Q2): Reduces cross-conduction risk and EMI in synchronous rectification and H-bridge control.
P_D	0.5W (min pad), 0.8W (1″² copper): Dictates thermal pad design for sustained operation in sealed enclosures.

Pinout & Package

Package: SOT563 - ultra-small surface-mount, 6-pin, lead-free, halogen-free molded plastic (UL 94V-0), 0.027g weight, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1	N-channel Source	Common source node for complementary pair; requires low-impedance PCB connection for optimal thermal and switching performance.
2	N-channel Gate	Control input for N-MOSFET; driven high (≥4.5V) to turn on Q1; must be actively pulled low to ensure off-state.
3	P-channel Drain	High-side switch output; connects to supply rail when Q2 is active; shares thermal path with pin 1 via internal leadframe.
4	P-channel Source	Common source node (shared with pin 1); forms bidirectional current path between Q1 drain and Q2 drain terminals.
5	P-channel Gate	Control input for P-MOSFET; driven low (≤–4.5V relative to source) to turn on Q2; requires negative or rail-referenced drive.
6	N-channel Drain	Low-side switch output; connects to ground return path when Q1 is active; optimized for minimal inductance in power routing.

Key Features

Feature	Design Value
Complementary Pair Integration	Single SOT563 package contains matched N+P MOSFETs with shared source, reducing board area by >40% vs. discrete solutions.
AEC-Q101 Qualification	Validated for automotive applications including engine control modules, body electronics, and ADAS power stages per IATF 16949 manufacturing.
Low R_DS(ON) at 4.5V	3Ω (Q1) and 6Ω (Q2) enable efficient operation directly from 5V logic rails without level-shifting circuitry.
Ultra-Low Input Capacitance	C_iss ≤ 41pF minimizes gate drive energy and propagation delay, supporting clean edge rates in signal routing and timing-critical switches.
Green Construction	Fully RoHS 3 compliant, halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), suitable for EU and global environmental compliance programs.

Applications

Automotive Body Control Module

Industrial Sensor Interface

Use Scenario: Bidirectional signal conditioning and power gating for LIN bus transceivers and door lock actuators.

IC Role / Device Role / Timing Role: Complementary switch controlling 12V supply to peripheral ICs and managing reverse-polarity protection paths.

Use Value: Eliminates need for external level shifters and discrete PNP/NPN pairs, reducing BOM count and improving startup timing consistency.

Use Scenario: Isolated power sequencing and analog multiplexing in programmable logic controllers (PLCs) with 24V DC inputs.

IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable/disable of sensor bias rails and ADC reference buffers.

Use Value: Achieves <5µs turn-on delay and <100ns channel-to-channel skew, preserving signal integrity during multi-sensor sampling cycles.

USB-C Port Power Switching

Medical Wearable Power Management

Use Scenario: VBUS and CC line protection in portable docking stations handling 5V/3A USB PD negotiation.

IC Role / Device Role / Timing Role: Low-R_DS(ON) back-to-back switch providing overvoltage clamping and hot-swap current limiting.

Use Value: Delivers <150mΩ effective on-resistance in series configuration, minimizing voltage drop and thermal rise under full load.

Use Scenario: Battery-backed power path selection and sensor bias control in FDA-cleared glucose monitors and pulse oximeters.

IC Role / Device Role / Timing Role: AEC-Q101-qualified discrete switch ensuring fail-safe shutdown during low-battery or fault conditions.

Use Value: Meets IEC 60601-1 leakage current limits (<10µA) and supports 10-year shelf-life requirements via stable gate oxide and low IDSS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2020SNVQ-7	N-only dual MOSFET (2× N-ch, 20V, 20mΩ), no P-channel; smaller R_DS(ON) but unidirectional only.	Requires external P-MOSFET or charge pump for high-side drive; unsuitable for true complementary switching.	Select only when topology allows separate high-side control and lower on-resistance is critical for N-ch path.
DMC2038LSD-13	Single N+P pair in SOT-363 (larger footprint), higher R_DS(ON) (2.5Ω/5.5Ω), same AEC-Q101 rating.	Compatible pinout for legacy designs; higher thermal resistance (R_θJA = 300°C/W) limits power density.	Choose for drop-in replacement in existing SOT-363 layouts where board rework is prohibited.

Compared with DMC2020SNVQ-7 and DMC2038LSD-13, the DMC62D2SVQ-7 uniquely delivers matched complementary switching in the smallest footprint (SOT563), lowest thermal resistance among AEC-Q101 dual-channel MOSFETs, and guaranteed 4.5V drive capability - making it optimal for space-constrained automotive and portable medical systems.

Availability

DMC62D2SVQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable medical device power management requiring stable component supply and long-term lifecycle assurance.

Supply support for DMC62D2SVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q200 standards.

The DMC62D2SVQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power switching in harsh-environment applications including engine control, lighting, and ADAS subsystems.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

The N-channel (Q1) delivers 380mA and the P-channel (Q2) delivers –250mA at TA = +70°C with VGS = 10V and –10V respectively, as specified in the Absolute Maximum Ratings table. Derating follows linear thermal curves up to TJ = +150°C, and PCB layout using 1-inch² copper improves current capacity by ~25%.

Does the DMC62D2SVQ-7 support 3.3V logic-level gate drive for both channels?

Yes - Q1's VGS(TH) range (1.0–2.5V) ensures reliable turn-on with 3.3V drive; Q2's VGS(TH) (–1 to –3V) requires gate voltage ≤ –3.3V relative to its source, achievable via inverting buffer or charge-pump circuit. At VGS = 4.5V/–4.5V, RDS(ON) is 3Ω/6Ω - confirmed in Electrical Characteristics tables.

How is thermal performance affected by PCB pad design?

With minimum recommended pads, RθJA = 261°C/W limits power dissipation to 0.5W; using a 1-inch² copper area reduces RθJA to 158°C/W, raising PD to 0.8W. The SOT563 package relies on pins 1 and 4 (common source) for primary heat conduction - thermal vias under these pads are strongly recommended for sustained >300mA operation.

Is the DMC62D2SVQ-7 suitable for reverse polarity protection circuits?

Yes - the integrated back-to-back MOSFET configuration (Q1 drain to Q2 drain, sources tied) enables robust reverse-voltage blocking up to ±60V. When used with proper gate biasing, it achieves <10mV forward drop at 200mA, outperforming Schottky diodes in efficiency and thermal behavior while meeting AEC-Q101 transient surge requirements.

DMC62D2SVQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 480mA (Ta), 320mA (Ta)

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA, 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.04nC @ 10V, 1.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 30V, 40pF @ 25V

Power - Max:: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

DMC62D2SVQ-7 FAQ

1.How can I place an order for DMC62D2SVQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC62D2SVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC62D2SVQ-7 reliable?

The price and inventory of DMC62D2SVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC62D2SVQ-7 is usually 5 days.

3.What payment methods are accepted for DMC62D2SVQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC62D2SVQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC62D2SVQ-7?

DMC62D2SVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC62D2SVQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC62D2SVQ-7?

For technical support, including DMC62D2SVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC62D2SVQ-7 requirements.

6.How does Aetrix verify that DMC62D2SVQ-7 is sourced from the original manufacturer or authorized distributors?

All DMC62D2SVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC62D2SVQ-7 meets industry standards.

7.What is the process for return or replacement of DMC62D2SVQ-7?

All DMC62D2SVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC62D2SVQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC62D2SVQ-7 part is unused and in its original packaging.

Return procedure for DMC62D2SVQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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