Diodes Incorporated DMC67D8UFDBQ-13

Overview

DMC67D8UFDBQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 Type B package, integrating one N-channel (60 V, 4.0 Ω @ 10 V) and one P-channel (–20 V, 72 mΩ @ –4.5 V) device for bidirectional load switching. It delivers low input capacitance (41 pF / 443 pF), ESD-protected gates, and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMC67D8UFDBQ-13 datasheet, DMC67D8UFDBQ-13 pinout, DMC67D8UFDBQ-13 application, or DMC67D8UFDBQ-13 equivalent, key selection criteria include dual-channel R_DS(on) matching at low gate drive (4.5 V and 5 V), thermal resistance (R_θJA = 140 °C/W with copper pad), and automotive-grade reliability under PPAP-controlled manufacturing.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection-each channel operates with its own gate, source, and drain terminals. The N-channel supports 60 V V_DSS and 0.39 A continuous current at 25 °C; the P-channel sustains –20 V V_DSS and –2.9 A with gate threshold of –0.6 to –1.25 V.

Both devices feature integrated gate protection diodes and are characterized for operation across –55 °C to +150 °C junction temperature. Dynamic parameters include Q_g = 0.4 pC (N-ch) and 7.3 nC (P-ch), enabling fast switching in low-duty-cycle load control with minimal gate drive energy.

Key Specifications

Pinout & Package

Package: U-DFN2020-6 Type B, 2.0 mm × 2.0 mm × 0.6 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET load switch applications.

Compared with DMC2025UFDBQ-7, DMC67D8UFDBQ-13 offers tighter R_DS(on) tolerance and certified automotive qualification; versus DMC3025UFDBQ-13, it trades off conduction performance for lower gate charge and reduced EMI in noise-sensitive infotainment domains.

Availability

DMC67D8UFDBQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, reverse polarity protection circuits, and LED lighting drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMC67D8UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for robustness in 12 V/24 V vehicle subsystems where AEC-Q101 compliance, low R_DS(on), and compact packaging are mandatory.

FAQ

What is the maximum allowable gate-source voltage for each channel?

The N-channel supports ±20 V V_GS, while the P-channel is rated for ±12 V. Exceeding ±12 V on G2 risks permanent gate oxide damage, even if V_DS remains within limits. Designers must ensure gate drive circuitry clamps G2 to ≤12 V magnitude, especially during hot-swap events.

Can this device be used in a synchronous buck converter?

No - DMC67D8UFDBQ-13 lacks internal bootstrap diode, gate driver integration, or matched timing characteristics required for synchronous rectification. Its asymmetric R_DS(on) and C_iss values make it unsuitable for high-frequency (>100 kHz) switching topologies where shoot-through prevention is critical.

How does the ESD protection affect PCB layout?

The integrated gate protection diodes require no external components but mandate strict adherence to the recommended U-DFN2020-6 Type B pad layout (X2 = 1.65 mm, Y2 = 2.30 mm). Deviations increase thermal resistance and reduce ESD immunity below the rated 2 kV HBM level due to parasitic inductance in undersized traces.

Is the P-channel's –20 V V_DSS sufficient for 24 V truck applications?

No - while the P-channel is rated for –20 V, 24 V systems impose transient spikes exceeding –30 V during load dump. This device is qualified only for 12 V passenger vehicle applications per AEC-Q101 test conditions. For 24 V trucks, a –40 V or –60 V P-channel device is required.