Diodes Incorporated DMC67D8UFDBQ-7

Overview

DMC67D8UFDBQ-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 Type B package, integrating an N-channel (60 V, 4.0 Ω @ 10 V) and P-channel (−20 V, 72 mΩ @ −4.5 V) device for bidirectional load switching. It delivers low on-resistance, low input capacitance (41 pF / 443 pF), and ESD-protected gates, qualified to AEC-Q101 for automotive load switch applications.

For engineers reviewing the DMC67D8UFDBQ-7 datasheet, DMC67D8UFDBQ-7 pinout, DMC67D8UFDBQ-7 application, or DMC67D8UFDBQ-7 equivalent, key selection criteria include dual-channel complementary operation, automotive-grade reliability, thermal resistance (R_θJA = 140 °C/W with copper pad), and gate threshold matching (V_GS(th) = +1.0–2.5 V / −0.6–−1.25 V) for synchronous control.

Technical Context

This dual MOSFET implements a matched complementary topology optimized for half-bridge or high-side/low-side load switching where compact size and gate drive compatibility are critical. The N-channel supports 60 V drain-source blocking with 0.39 A continuous current at 25 °C, while the P-channel handles −20 V and −2.9 A under identical conditions - enabling symmetrical control in space-constrained automotive subsystems.

Its U-DFN2020-6 Type B package integrates thermally enhanced leadframe design (NiPdAu finish), moisture sensitivity level 1, and 0.6 mm max height. Gate protection diodes and ESD-hardened structure ensure robustness against transient events in 12 V vehicle electrical systems.

Key Specifications

Pinout & Package

Package: U-DFN2020-6 Type B, 2.0 × 2.0 × 0.6 mm, molded green compound (UL 94V-0), NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET load switch applications.

Compared with DMC2038UFDBQ-7 and DMC3025LSD-13, the DMC67D8UFDBQ-7 uniquely balances 60 V N-ch blocking, AEC-Q101 qualification, and 2.0 mm × 2.0 mm footprint - making it optimal for next-generation compact automotive power switches where voltage margin and reliability are non-negotiable.

Availability

DMC67D8UFDBQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting systems, infotainment power sequencing, and engine control unit I/O protection requiring stable component supply and full AEC-Q101 compliance.

Supply support for DMC67D8UFDBQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949-certified operations.

The DMC67D8UFDBQ-7 belongs to Diodes' AEC-Q101-qualified U-DFN power MOSFET product line, engineered specifically for space-constrained automotive load switching where thermal performance, gate robustness, and qualification integrity are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMC67D8UFDBQ-7 has a specified junction temperature range of −55 °C to +150 °C. For continuous operation under steady-state conditions, the absolute maximum is +150 °C. Derating is required above +125 °C ambient depending on PCB copper area and airflow; with 1-inch² 2 oz copper, full 0.89 W power dissipation is permitted up to +70 °C ambient.

Can the N-channel and P-channel be operated simultaneously in a half-bridge configuration?

Yes - the internal pinout (D1 connected to S2) supports half-bridge use, but external gate drive must account for floating high-side N-ch requirements. The P-ch source (S2) serves as the switching node; therefore, a bootstrap or isolated gate driver is needed to maintain V_GS > 10 V on G1 during high-side conduction.

Is the gate oxide protected against overvoltage during hot-plug events?

The device incorporates integrated gate protection diodes and is rated for ±20 V gate-source voltage (V_GS) on the N-channel and ±12 V on the P-channel. This protects against transient overshoot during hot insertion, provided external gate resistors limit peak current to <100 mA per the datasheet's ESD test conditions.

Does the "Type B" suffix in U-DFN2020-6 indicate a different thermal pad layout than Type A?

Yes - U-DFN2020-6 Type B features a centered thermal pad (exposed copper on underside) with dimensions 0.50–0.70 mm × 0.90–1.10 mm, whereas Type A uses a smaller, offset pad. The DMC67D8UFDBQ-7 requires the Type B pad layout (X2 = 1.65 mm, Y2 = 2.30 mm) for optimal thermal performance and solder joint reliability.