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Diodes Incorporated DMG1012UWQ-7
- Part No.:
- DMG1012UWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMG1012UWQ-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:2,970
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Product details
Overview
DMG1012UWQ-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 20V VDSS, 0.45Ω RDS(ON) at VGS = 4.5V, and 0.95A continuous drain current at TA = +25°C. It delivers low gate threshold (0.5–1.0V), fast switching (tD(ON) = 5.2ns), and AEC-Q101 qualification-used in automotive power management and DC-DC converter load switches.
For engineers reviewing the DMG1012UWQ-7 datasheet, DMG1012UWQ-7 pinout, DMG1012UWQ-7 application, or DMG1012UWQ-7 equivalent, key selection criteria include its 1.8V logic-level drive capability, 43pF Ciss, 0.46W power dissipation on FR-4, ESD protection, and suitability for space-constrained automotive body electronics and portable power rails.
Technical Context
This MOSFET employs planar silicon technology optimized for low RDS(ON) at sub-3V gate drive while maintaining robust safe operating area (SOA) up to 10ms pulses. Its 7pF Crss and 1.0nC total gate charge enable efficient high-frequency switching in synchronous buck stages.
The device features a fully characterized body diode with 0.7–1.2V forward voltage at 150mA and supports bidirectional current flow in analog switch configurations. Thermal resistance of 269°C/W (RθJA) reflects standard FR-4 mounting without thermal pad enhancement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 12V automotive rail and USB-PD auxiliary power paths |
| RDS(ON) @ VGS = 4.5V | 0.45Ω - Enables <100mW conduction loss at 0.95A, suitable for low-power load switching |
| VGS(TH) | 0.5–1.0V - Ensures reliable turn-on with 1.8V/2.5V I/O controllers and microcontroller GPIOs |
| Ciss | 43pF - Limits gate drive energy requirement and enables <10MHz switching in discrete regulators |
| Qg | 1.0nC - Supports fast edge rates with minimal gate driver current (e.g., <10mA peak) |
| TJ Range | −55°C to +150°C - Validated operation across automotive under-hood and infotainment temperature zones |
| ESD Rating | HBM Class 2 (≥2kV) - Integrated protection eliminates need for external TVS in low-energy signal paths |
Pinout & Package
Package: SOT323 - 3-pin surface-mount plastic package (2.15mm × 2.10mm × 0.95mm), moisture sensitivity level 1, lead-free matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 0–6V logic-level signals; 0.2nC Qgs minimizes Miller-induced shoot-through risk |
| D | Drain | High-side or low-side power path node; connected to load or supply; handles pulsed 6A currents |
| S | Source | Reference node for gate drive; tied to ground (low-side) or output rail (high-side); hosts body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.8V drive | 0.75Ω - Enables direct interface with 1.8V FPGA I/O banks without level-shifting |
| Fast turn-off timing | tD(OFF) = 452ns - Reduces cross-conduction loss in synchronous rectifier topologies |
| Thermally stable RDS(ON) | +15% drift from −55°C to +150°C - Predictable conduction loss across full automotive ambient range |
| Green packaging | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - Complies with EU ELV and OEM sustainability mandates |
| AEC-Q101 qualification | PPAP-capable, IATF 16949 manufacturing - Meets automotive change control and traceability requirements |
Applications
| Automotive Body Control Module (BCM) | USB-C Power Delivery Auxiliary Switch |
|---|---|
Use Scenario: Low-side switching of LED map lights and door lock actuators in 12V vehicle electrical architecture. IC Role / Device Role / Timing Role: Load switch controlling 0.5A resistive/inductive loads; driven by 3.3V microcontroller PWM with 20kHz duty cycling. Use Value: 0.45Ω RDS(ON) limits heat rise to <15°C above ambient at 0.5A, eliminating heatsink requirement in sealed BCM enclosures. |
Use Scenario: Reverse-polarity protection and VBUS path control in compact USB-C sink implementations. IC Role / Device Role / Timing Role: High-side NMOS switch enabling/disabling 5–20V VBUS with fast fault response (<1µs overcurrent detection). Use Value: 1.0V gate threshold ensures turn-on with USB PD controller's 1.8V logic outputs, reducing BOM count versus discrete level-shifters. |
| Portable Medical Sensor Node | Industrial IoT Edge Node Power Sequencing |
Use Scenario: Battery-powered pulse oximeter with dual-sensor activation requiring isolated 3.3V/5V rail enable. IC Role / Device Role / Timing Role: Dual independent load switch managing sensor bias and ADC reference supply sequencing. Use Value: 0.13Ω typical RDS(ON) at 4.5V reduces dropout to <50mV at 300mA, preserving battery runtime and measurement accuracy. |
Use Scenario: Controlled power-up of MCU, radio, and sensor subsystems in factory-floor wireless nodes. IC Role / Device Role / Timing Role: Cascaded low-side switches implementing timed enable sequence (e.g., LDO → MCU → RF transceiver). Use Value: 43pF Ciss and 5.2ns tD(ON) allow precise 100µs inter-rail delays using standard GPIO timing without external RC networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | 20V VDSS, 0.35Ω RDS(ON) @ 4.5V, SOT23 package, higher ID (1.2A), but no AEC-Q101 rating | Lacks automotive qualification; unsuitable for PPAP-controlled production | Select when cost-sensitive industrial designs require lower RDS(ON) and AEC-Q101 is not mandated |
| AO3414 | 20V VDSS, 0.45Ω RDS(ON) @ 4.5V, same SOT23 footprint, but 1.0A ID, non-automotive grade, higher Ciss (60pF) | Higher gate capacitance increases driver loading; no thermal or reliability validation for automotive temp range | Prefer for consumer-grade DC-DC enable circuits where SOA margin and 150°C operation are non-critical |
Compared with DMN2016LFG-7 and AO3414, the DMG1012UWQ-7 provides verified AEC-Q101 compliance, tighter VGS(TH) distribution (0.5–1.0V), and lower Crss (7pF) for reduced Miller feedback-critical for noise-immune operation in automotive CAN/LIN subsystems.
Availability
DMG1012UWQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery modules, and portable medical sensor nodes requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for DMG1012UWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMG1012UWQ belongs to Diodes' Automotive Logic-Level MOSFET product line, engineered specifically for low-voltage, high-reliability power switching in 12V/24V vehicle systems and portable electronics with stringent thermal and qualification requirements.
FAQ
Is DMG1012UWQ-7 qualified for automotive use?
Yes. The DMG1012UWQ-7 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It undergoes stress testing including HTOL, TC, and ESD per AEC standards, with full traceability documentation available upon request for Tier-1 automotive programs.
What is the maximum continuous drain current at 85°C ambient?
At TA = +85°C, the DMG1012UWQ-7 supports 0.75A continuous drain current with VGS = 4.5V, based on thermal derating from its 0.46W power dissipation limit and 269°C/W junction-to-ambient thermal resistance on standard FR-4 PCB layout.
Can DMG1012UWQ-7 be used in high-side switch configuration?
Yes, but requires gate drive ≥ VDS + VGS(TH). With a 1.0V max VGS(TH), driving the gate to ≥6V (e.g., using charge pump or bootstrap circuit) enables reliable high-side operation up to 20V drain potential, confirmed by SOA curves supporting 10ms pulses at 20V/0.5A.
Does the SOT323 package support automated optical inspection (AOI)?
Yes. The SOT323 package has coplanar leads and defined solder joint geometry per IPC-7351B, enabling reliable AOI detection of solder bridging, insufficient wetting, and lateral offset. Diodes' marking "Y̅M" (year/month) is laser-etched for consistent machine readability.
DMG1012UWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 950mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 43 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 460mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMG1012UWQ-7 FAQ
1.How can I place an order for DMG1012UWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG1012UWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG1012UWQ-7 reliable?
The price and inventory of DMG1012UWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1012UWQ-7 is usually 5 days.
3.What payment methods are accepted for DMG1012UWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1012UWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG1012UWQ-7?
DMG1012UWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG1012UWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG1012UWQ-7?
For technical support, including DMG1012UWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1012UWQ-7 requirements.
6.How does Aetrix verify that DMG1012UWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMG1012UWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1012UWQ-7 meets industry standards.
7.What is the process for return or replacement of DMG1012UWQ-7?
All DMG1012UWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1012UWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG1012UWQ-7 part is unused and in its original packaging.
Return procedure for DMG1012UWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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