Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMG1016UDWQ-7

Part No.:
DMG1016UDWQ-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMG1016UDWQ-7.pdf
Description:
MOSFET N/P-CH 20V 1.066A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMG1016UDWQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT363 package, integrating an N-channel (20 V, 0.45 Ω @ 4.5 V) and P-channel (−20 V, 0.75 Ω @ −4.5 V) device. It delivers 1.066 A continuous drain current for Q1 and −845 mA for Q2 at +25°C, with fast switching (tD(OFF) = 26.7 ns / 28.4 ns), low gate threshold (±0.5–1.0 V), and AEC-Q101 qualification for automotive power control.

For engineers reviewing the DMG1016UDWQ datasheet, DMG1016UDWQ pinout, DMG1016UDWQ application, or DMG1016UDWQ equivalent, this dual-channel MOSFET supports compact load switching, H-bridge drivers, and battery-isolation circuits where space-constrained, low-voltage, bidirectional control with tight thermal resistance (RθJA = 379 °C/W) is required.

Technical Context

This complementary pair operates with matched gate thresholds (N-ch: 0.5–1.0 V; P-ch: −0.5 to −1.0 V) enabling direct logic-level drive from 1.8–4.5 V controllers without level shifting. Its ultra-small SOT363 footprint integrates independent source-drain paths with shared gate control capability for push-pull or half-bridge topologies.

The device features low input capacitance (Ciss = 60.7 pF / 59.8 pF), low output leakage (|IDSS| ≤ 100 nA), and ESD protection-critical for robust operation in portable electronics and automotive body-control modules where transient immunity and low standby loss are mandatory.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V (N-ch) / −20 V (P-ch): Supports 12 V automotive and 5 V/3.3 V logic-supplied systems with margin against transients.
RDS(ON) 0.45 Ω @ 4.5 V (Q1), 0.75 Ω @ −4.5 V (Q2): Enables <150 mW conduction loss at 600 mA, critical for thermally constrained PCBs.
ID (continuous) 1066 mA (Q1), −845 mA (Q2) at +25°C: Sufficient for driving relays, solenoids, and LED arrays in space-limited modules.
Qg 737 nC (Q1), 622 pC (Q2): Low total gate charge enables efficient 1–10 MHz switching with minimal driver power overhead.
TJ range −55 to +150 °C: Validated for under-hood automotive environments and industrial battery management systems.
PD 330 mW: Power dissipation limit defined on FR-4 with minimum pad layout-guides thermal design for sustained operation.
AEC-Q101 Qualified: Meets stress-test requirements for automotive electronics, including temperature cycling and HTRB.

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), moisture sensitivity level 1, matte tin-plated leadframe, RoHS and halogen-free compliant.

Pin/Terminal Circuit Role Design Meaning
1 (S1) N-channel source Common reference node for N-MOS; tied to ground or low-side return path in half-bridge configurations.
2 (G1) N-channel gate Logic-level input for Q1; threshold compatible with 1.8 V microcontrollers and 3.3 V I/O.
3 (D1) N-channel drain Switched high-side output for loads referenced to VCC; connects to relay coil or LED anode.
4 (D2) P-channel drain Switched low-side output for loads referenced to ground; used for reverse-polarity protection or active pull-down.
5 (G2) P-channel gate Inverted logic input for Q2; driven low to turn on-compatible with open-drain or complementary gate drivers.
6 (S2) P-channel source Connected to VCC in high-side switch mode; forms complementary pair with S1 for bidirectional load control.

Key Features

Feature Design Value
Complementary pair integration Single SOT363 package replaces discrete N+P MOSFETs-reduces board area by >40% and eliminates inter-device timing skew.
Low RDS(ON) at 1.8 V VGS 0.75 Ω (Q1), 1.5 Ω (Q2): Enables functional switching even with weak GPIOs or degraded battery voltage (e.g., 2.5 V cutoff).
Fast switching with low Ciss 60.7 pF (Q1), 59.8 pF (Q2): Reduces gate drive energy and propagation delay-supports clean edge transitions in PWM dimming.
ESD protection HBM ≥ 2 kV: Withstands handling and board-level ESD events without external protection diodes in consumer-grade assemblies.
AEC-Q101 qualification PPAP-capable, manufactured in IATF 16949 facilities: Allows direct use in ASIL-B–compatible body electronics without requalification.

Applications

Automotive Body Control Module Portable Medical Device Power Sequencing

Use Scenario: Controlling window lift motors and door lock actuators in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Dual-channel load switch providing bidirectional current path control with independent enable timing for soft-start sequencing.

Use Value: Eliminates need for separate high-side and low-side drivers-reducing BOM count and PCB real estate while maintaining AEC-Q101 compliance.

Use Scenario: Managing power-up/down sequencing of sensor analog front-ends and Bluetooth radios in handheld diagnostics tools.

IC Role / Device Role / Timing Role: Complementary pair acts as controlled isolation switch between Li-ion battery and subsystem rails, enabling precise power domain activation.

Use Value: Low 1.8 V gate threshold ensures reliable turn-on during brown-out conditions; <100 nA leakage preserves battery shelf life over months.

Smart Home Relay Driver Board Industrial PLC Output Stage

Use Scenario: Driving 5 V/12 V mechanical relays in Wi-Fi–enabled smart switches and lighting controllers.

IC Role / Device Role / Timing Role: N-channel drives relay coil ground side; P-channel controls VCC side-enabling full H-bridge-like control with single logic signal.

Use Value: Fast tF (12.3 ns) and tR (7.4 ns) minimize contact arcing and extend relay mechanical life in high-cycle applications.

Use Scenario: Providing isolated 24 V DC output switching for solenoid valves and indicator lamps in factory automation panels.

IC Role / Device Role / Timing Role: Acts as solid-state replacement for electromechanical outputs-offering programmable on/off timing and diagnostic feedback via leakage monitoring.

Use Value: RDS(ON) stability over −40 to +85 °C ensures consistent power delivery across ambient extremes without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2710UDWQ Higher RDS(ON): 0.65 Ω (N), 1.1 Ω (P) @ 4.5 V; lower ID: 750 mA / −600 mA; same SOT363 package. Lower efficiency in high-current (>500 mA) loads; higher self-heating limits duty cycle in continuous operation. Select when cost sensitivity outweighs conduction loss-suitable for intermittent relay driving but not for PWM motor control.
NTJD4152P Non-AEC-Q101; RDS(ON) = 0.55 Ω (N), 0.95 Ω (P); higher Qg (1.1 nC); same SOT363 footprint. Lacks automotive qualification and PPAP support; unsuitable for OEM production requiring change control traceability. Acceptable for commercial-grade IoT hubs or prototyping-but requires full revalidation for automotive deployment.

Compared with DMC2710UDWQ and NTJD4152P, DMG1016UDWQ provides superior conduction efficiency, faster switching, and certified automotive readiness-making it the optimal choice for production-grade battery-powered and vehicle-mounted systems demanding reliability and thermal headroom.

Availability

DMG1016UDWQ is available at Aetrix Electronics and suitable for automotive body electronics, portable medical instrumentation, smart home relay interfaces, and industrial PLC output stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for DMG1016UDWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMG1016UDWQ belongs to Diodes' AEC-Q101–qualified small-signal MOSFET product line, engineered specifically for space-constrained, low-voltage bidirectional switching in automotive and portable electronics where thermal performance and qualification rigor are non-negotiable.

FAQ

Is DMG1016UDWQ pin-compatible with DMC2710UDWQ?

Yes-both devices use identical SOT363 pinout (S1-G1-D1-D2-G2-S2) and share the same footprint, allowing drop-in replacement in existing layouts. However, DMG1016UDWQ's lower RDS(ON) and higher ID ratings improve thermal margin and efficiency without requiring PCB changes.

What is the maximum safe operating frequency for PWM switching with DMG1016UDWQ?

Based on measured tD(OFF) (26.7 ns) and tF (12.3 ns), the device supports clean switching up to 5 MHz in low-duty-cycle applications. For continuous 50% duty-cycle operation, thermal limits constrain practical use to ≤1 MHz on standard FR-4 with minimum copper pour.

Does DMG1016UDWQ require external gate resistors for stability?

No external gate resistor is required for basic on/off control due to its low Ciss and integrated ESD protection. However, a 10–47 Ω series resistor is recommended when driving from high-speed microcontrollers to damp ringing and reduce EMI in noisy industrial environments.

Can DMG1016UDWQ be used in linear regulation mode?

No-it is optimized for switching operation only. The RDS(ON) vs. temperature curves show strong positive TC, but SOA charts do not support linear-mode biasing beyond brief transient conditions. Use dedicated LDOs or regulators for precision voltage control.

DMG1016UDWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs:
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
60.67pF @ 10V, 59.76pF @ 16V
Power - Max:
330mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMG1016UDWQ-7 FAQ

1.How can I place an order for DMG1016UDWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG1016UDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG1016UDWQ-7 reliable?

The price and inventory of DMG1016UDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1016UDWQ-7 is usually 5 days.

3.What payment methods are accepted for DMG1016UDWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1016UDWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG1016UDWQ-7?

DMG1016UDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG1016UDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG1016UDWQ-7?

For technical support, including DMG1016UDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1016UDWQ-7 requirements.

6.How does Aetrix verify that DMG1016UDWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMG1016UDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1016UDWQ-7 meets industry standards.

7.What is the process for return or replacement of DMG1016UDWQ-7?

All DMG1016UDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1016UDWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG1016UDWQ-7 part is unused and in its original packaging.

Return procedure for DMG1016UDWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG1016UDWQ-7 Tags

  • DMG1016UDWQ-7
  • DMG1016UDWQ-7 PDF
  • DMG1016UDWQ-7 Datasheet
  • DMG1016UDWQ-7 Specifications
  • DMG1016UDWQ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMG1016UDWQ-7
  • Buy DMG1016UDWQ-7
  • DMG1016UDWQ-7 Price
  • DMG1016UDWQ-7 Distributor
  • DMG1016UDWQ-7 Supplier
  • DMG1016UDWQ-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER