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Diodes Incorporated DMG1016VQ-7
- Part No.:
- DMG1016VQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMG1016VQ-7.pdf
- Description:
- MOSFET N/P-CH 20V 0.87A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:8,202
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Product details
Overview
DMG1016VQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT563 package, integrating one N-channel (20V, 0.4Ω @ 4.5V) and one P-channel (−20V, 0.7Ω @ −4.5V) device with gate threshold voltage <1V for both channels. It delivers low on-resistance, fast switching (tD(ON) = 5.1 ns), and ESD-protected gates, enabling compact dual-polarity load switching in space-constrained DC-DC converters.
For engineers reviewing the DMG1016VQ datasheet, DMG1016VQ pinout, DMG1016VQ application, or DMG1016VQ equivalent, this part supports AEC-Q101-qualified automotive power management, battery-powered load control, and ultra-low-voltage logic-level drive circuits where gate threshold below 1V and matched complementary characteristics are critical selection criteria.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection-each channel operates with its own gate, drain, and source terminals. The N-channel exhibits VGS(TH) = 0.5–1.0 V and RDS(ON) = 0.4 Ω at VGS = 4.5 V, while the P-channel provides VGS(TH) = −0.5 to −1.0 V and RDS(ON) = 0.7 Ω at VGS = −4.5 V, enabling symmetrical low-voltage drive in half-bridge or level-shifting configurations.
Thermal performance is defined by RθJA = 235°C/W on FR-4 PCB, with maximum junction temperature of +150°C and power dissipation limited to 530 mW. Dynamic parameters include Ciss = 60.7 pF (N-ch) / 59.8 pF (P-ch), Qg = 737 pC / 622 pC, and diode forward voltage VSD = 0.7–1.2 V (N-ch) / −0.8 to −1.2 V (P-ch), supporting high-frequency switching up to several MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V (N-ch) / −20 V (P-ch): Supports rail-to-rail operation across 0–20 V supply domains without breakdown. |
| RDS(ON) @ VGS = ±4.5 V | 0.4 Ω (N-ch) / 0.7 Ω (P-ch): Enables ≤100 mW conduction loss at 500 mA load current per channel. |
| VGS(TH) | 0.5–1.0 V (N-ch) / −0.5 to −1.0 V (P-ch): Allows direct interface with 1.8 V and 2.5 V logic outputs without level shifters. |
| Qg | 737 pC (N-ch) / 622 pC (P-ch): Determines gate drive energy requirement for 1 MHz switching at <10 mA average gate current. |
| tD(ON) | 5.1 ns (both channels): Limits minimum pulse width to ~20 ns, suitable for >20 MHz PWM in Class-D amplifiers or buck controllers. |
| PD | 530 mW: Sets maximum continuous power handling on standard FR-4 PCB, requiring thermal relief for >300 mA sustained loads. |
| Ciss | 60.7 pF (N-ch) / 59.8 pF (P-ch): Defines input capacitance seen by driver IC, impacting rise/fall time and gate drive impedance selection. |
Pinout & Package
Package: SOT563 - ultra-small surface-mount 6-terminal plastic package (1.60 × 1.60 × 0.60 mm), moisture sensitivity level 1, matte tin annealed finish, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | N-channel source | Reference node for N-MOSFET; tied to ground or low-side return path in high-side switch configuration. |
| G1 | N-channel gate | Control input for N-MOSFET; requires ≥1.0 V above S1 to fully enhance; ESD-protected (±1 µA leakage). |
| D1 | N-channel drain | Output node for N-MOSFET; connects to load or power rail; handles up to +20 V and 870 mA peak current. |
| D2 | P-channel drain | Output node for P-MOSFET; connects to load or power rail; handles up to −20 V and −640 mA peak current. |
| G2 | P-channel gate | Control input for P-MOSFET; requires ≤−1.0 V below S2 to fully enhance; ESD-protected (±2 µA leakage). |
| S2 | P-channel source | Reference node for P-MOSFET; typically tied to VCC or high-side supply; defines negative gate drive reference. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single SOT563 package contains matched N- and P-channel MOSFETs with symmetric VGS(TH) magnitude (<1 V), enabling compact H-bridge or push-pull drivers without discrete pairing. |
| Low Threshold Voltage | VGS(TH) ≤1.0 V (N-ch) and ≥−1.0 V (P-ch) allows direct drive from 1.8 V microcontrollers and low-power logic families without external level shifters. |
| Ultra-Small Footprint | SOT563 (1.6 × 1.6 mm) reduces board area by >50% versus discrete SOT23-6 solutions, critical for wearables and hearing aids. |
| ESD-Protected Gate | Integrated gate protection sustains ±2 kV HBM per JESD22-A114, eliminating need for external TVS diodes in handheld product designs. |
| AEC-Q101 Qualified | Validated for automotive applications including body electronics and infotainment power rails, with PPAP documentation and IATF 16949 manufacturing control. |
Applications
| Automotive Body Control Module (BCM) | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Controlling door lock actuators and interior lighting via 12 V battery-supplied microcontroller outputs. IC Role / Device Role / Timing Role: Dual-channel load switch providing high-side (P-ch) and low-side (N-ch) drive for bidirectional actuator control and LED dimming. Use Value: Eliminates need for two separate MOSFETs and associated gate resistors, reducing BOM count by 3 components and PCB area by 2.5 mm² per switch node. |
Use Scenario: Enabling/disabling VBUS (5–20 V) to USB-C peripheral ports under firmware control in portable docking stations. IC Role / Device Role / Timing Role: Complementary pair configured as ideal diode controller and reverse-current blocking switch for hot-plug safe power routing. Use Value: Achieves <100 ns turn-off response to prevent backfeed during cable disconnect, meeting USB PD 3.1 fault recovery timing requirements. |
| Medical Wearable Sensor Node | Industrial IoT Edge Controller |
Use Scenario: Power gating of BLE radio, accelerometer, and optical heart-rate sensor to extend coin-cell battery life beyond 12 months. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤100 nA) dual switch isolating subsystems during deep-sleep mode while maintaining logic-level compatibility with 1.8 V MCU GPIOs. Use Value: Reduces quiescent current to <200 nA per switched domain, cutting system sleep current by 85% versus discrete MOSFET solutions. |
Use Scenario: Isolating 24 V fieldbus I/O modules from main controller during firmware updates or fault conditions. IC Role / Device Role / Timing Role: High-reliability power switch with AEC-Q101 qualification and 150°C max TJ, used in redundant power-path management for PLC analog inputs. Use Value: Ensures uninterrupted operation during hot-swap events with <5 µs overcurrent shutdown latency, meeting IEC 61000-4-5 surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012UW-7 | Same SOT563 package but N/P pair rated at 30 V/−30 V; RDS(ON) = 0.65 Ω / 1.0 Ω @ ±4.5 V; higher VDSS, higher RDS(ON). | Preferred for 24 V industrial systems where 20 V margin is insufficient; less suitable for 1.8 V logic drive due to higher VGS(TH) (0.7–1.3 V). | Select when operating voltage exceeds 20 V or when higher avalanche robustness is required; avoid if gate drive is limited to ≤2.5 V. |
| Si1027DL-T1-GE3 | 6-pin SOT563 complementary pair from Vishay; 20 V/−20 V rating; RDS(ON) = 0.55 Ω / 0.95 Ω @ ±4.5 V; no AEC-Q101 qualification. | Cost-optimized alternative for consumer-grade applications; lacks automotive qualification and tighter VGS(TH) distribution. | Acceptable for non-automotive, non-safety-critical designs where qualification documentation is not required and 15% higher RDS(ON) is tolerable. |
Compared with DMG1016VQ, DMG1012UW-7 trades lower on-resistance for higher voltage capability and relaxed logic-level drive, while Si1027DL-T1-GE3 offers cost advantage at the expense of automotive qualification and threshold voltage tightness-making DMG1016VQ optimal for space-constrained, 1.8 V–4.5 V driven, AEC-Q101–mandated applications.
Availability
DMG1016VQ is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, medical wearable power management, and industrial IoT edge controllers requiring stable component supply across multi-year production cycles.
Supply support for DMG1016VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and test facilities certified to IATF 16949 and ISO 9001 standards.
The DMG1016VQ belongs to Diodes' high-density power management MOSFET family, engineered specifically for space-constrained, low-voltage, automotive-qualified load switching applications where gate drive simplicity and thermal efficiency are critical.
FAQ
Is DMG1016VQ qualified for automotive use?
Yes, DMG1016VQ is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. It supports PPAP documentation and is approved for automotive body electronics, infotainment power rails, and ADAS auxiliary supplies. Its −55°C to +150°C operating range and 150°C max junction temperature meet stringent automotive thermal requirements.
What is the maximum continuous drain current for each channel?
The N-channel supports 870 mA at TA = +25°C and derates to 630 mA at +85°C; the P-channel supports −640 mA at +25°C and derates to −460 mA at +85°C. These values assume mounting on FR-4 PCB with standard copper pour; actual current must be limited by power dissipation (PD = 530 mW) and thermal resistance (RθJA = 235°C/W).
Can DMG1016VQ be used with 1.8 V logic-level microcontrollers?
Yes. With VGS(TH) as low as 0.5 V (N-ch) and −0.5 V (P-ch), and guaranteed RDS(ON) at VGS = 1.8 V (0.7 Ω N-ch / 1.3 Ω P-ch), DMG1016VQ interfaces directly with 1.8 V GPIOs without level shifting. Gate drive current remains below 1 mA at 1.8 V, compatible with most low-power MCUs.
Does DMG1016VQ include integrated ESD protection?
Yes. Both gate terminals feature integrated ESD protection rated to ±2 kV HBM (per JESD22-A114). Gate leakage is specified at ±1.0 µA (N-ch) and ±2.0 µA (P-ch) at ±4.5 V, confirming robust oxide integrity without requiring external gate protection diodes in typical handheld or automotive environments.
DMG1016VQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 870mA, 640mA
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60.67pF @ 16V
- Power - Max:
- 530mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMG1016VQ-7 FAQ
1.How can I place an order for DMG1016VQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG1016VQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG1016VQ-7 reliable?
The price and inventory of DMG1016VQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1016VQ-7 is usually 5 days.
3.What payment methods are accepted for DMG1016VQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1016VQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG1016VQ-7?
DMG1016VQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG1016VQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG1016VQ-7?
For technical support, including DMG1016VQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1016VQ-7 requirements.
6.How does Aetrix verify that DMG1016VQ-7 is sourced from the original manufacturer or authorized distributors?
All DMG1016VQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1016VQ-7 meets industry standards.
7.What is the process for return or replacement of DMG1016VQ-7?
All DMG1016VQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1016VQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG1016VQ-7 part is unused and in its original packaging.
Return procedure for DMG1016VQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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