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Diodes Incorporated DMG1023UV-7

Part No.:
DMG1023UV-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMG1023UV-7.pdf
Description:
MOSFET 2P-CH 20V 1.03A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:763,096

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Product details

Overview

DMG1023UV-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in an ultra-small SOT563 package, rated for -20 V VDSS, 1.03 A continuous drain current at 25°C, and featuring RDS(on) of 0.5 Ω at VGS = -4.5 V. It delivers fast switching (tD(on) = 5.1 ns), low gate threshold (-0.5 to -1.0 V), and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMG1023UV-7 datasheet, DMG1023UV-7 pinout, DMG1023UV-7 application, or DMG1023UV-7 equivalent, key selection criteria include its dual-channel P-MOS topology, low-voltage gate drive compatibility, thermal resistance (RθJA = 235 °C/W), and ESD robustness (3 kV HBM), especially in space-constrained load-switching and battery-protection circuits.

Technical Context

This dual P-MOSFET integrates two independent enhancement-mode channels sharing a common source configuration in a single SOT563 footprint. Its low VGS(th) enables direct interface with 1.8 V/2.5 V logic, while low Ciss (59.76 pF) and Qg (622.4 pC) support high-frequency switching up to several MHz in DC-DC and load-switch applications.

The device operates across -55°C to +150°C, with RDS(on) tightly specified at multiple VGS points (-1.5 V to -4.5 V) and temperature-stable leakage (IDSS ≤ -100 nA at -20 V). Its AEC-Q101 qualification confirms suitability for automotive body electronics requiring high reliability under thermal cycling and humidity stress.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-20 V - Maximum blocking voltage before avalanche conduction in each channel
RDS(on) @ VGS = -4.5 V0.5 Ω typ - Enables <100 mW conduction loss at 430 mA per channel
ID Continuous @ 25°C1.03 A - Sustained current capability per channel with FR-4 PCB layout
Qg622.4 pC - Gate charge determining drive strength requirement for 1–10 MHz switching
RθJA235 °C/W - Thermal resistance defining junction-to-ambient rise under standard pad layout
VGS(th)-0.5 to -1.0 V - Ensures turn-on with low-voltage microcontrollers (e.g., 1.8 V I/O)
Ciss59.76 pF - Input capacitance affecting gate driver slew rate and EMI behavior

Pinout & Package

SOT563 is a 6-pin ultra-compact surface-mount package with dual-drain-exposed layout and matte tin-plated copper leadframe. Dimensions: 1.6 × 1.2 × 0.5 mm (L × W × H), moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
S1Source of Channel 1Common source terminal for first P-MOS; tied internally to substrate in typical layout
G1Gate of Channel 1Control input for independent switching of first channel; requires negative VGS
D1Drain of Channel 1High-side or low-side switching node; electrically isolated from D2
S2Source of Channel 2Source terminal for second P-MOS; not internally connected to S1
G2Gate of Channel 2Independent control input; enables dual-load isolation or complementary drive
D2Drain of Channel 2Second switching node; supports dual independent loads or parallel operation

Key Features

FeatureDesign Value
Dual P-channel topologyTwo independent enhancement-mode MOSFETs in one SOT563 footprint, enabling compact dual-load switching without discrete pairing
Low RDS(on) at low VGS0.7 Ω max at VGS = -2.5 V - Supports efficient operation from 3.3 V or lower supply rails
AEC-Q101 qualificationValidated for automotive temperature cycling, humidity bias, and mechanical shock - suitable for body control modules and lighting
ESD protection3 kV HBM rating - eliminates need for external TVS in most board-level ESD environments
Green RoHS complianceLead-free, halogen-free, antimony-free construction - meets EU Directive 2011/65/EU and JESD22-A114

Applications

Automotive Body Control UnitUSB-C Power Delivery Load Switch

Use Scenario: Controlling power to door modules, interior lighting, and mirror heaters in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Dual-channel high-side load switch managing independent 12 V supplies with reverse-polarity protection.

Use Value: Low RDS(on) minimizes voltage drop and heat generation; AEC-Q101 ensures reliability over 15-year vehicle lifetime.

Use Scenario: Enabling/disabling VBUS paths in portable USB-C accessories with strict size constraints.

IC Role / Device Role / Timing Role: Dual P-MOSFET acting as bidirectional load switch with controlled inrush and reverse-current blocking.

Use Value: Ultra-small SOT563 saves >40% board area vs. two discrete SOT23 devices; low VGS(th) allows direct MCU GPIO control.

Industrial Sensor Node Power GatingMedical Wearable Battery Protection

Use Scenario: Power cycling analog sensor front-ends and wireless transceivers in battery-powered IIoT nodes.

IC Role / Device Role / Timing Role: Dual independent power switches isolating subsystems during sleep mode to reduce quiescent current.

Use Value: Sub-100 nA IDSS ensures <1 µA total leakage per channel - extends multi-year battery life.

Use Scenario: Protecting Li-ion cells from over-discharge and reverse polarity in compact wearable monitors.

IC Role / Device Role / Timing Role: Dual P-MOSFET configured as back-to-back switch for bidirectional blocking and low-loss discharge path.

Use Value: 0.5 Ω RDS(on) limits voltage drop to <500 mV at 1 A - preserves usable battery capacity and runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2023LSD-13Single-channel, SOT23-6 package; higher RDS(on) (0.85 Ω @ -4.5 V); no AEC-Q101Lacks dual integration - requires two devices for same function; lower thermal performance (RθJA = 290 °C/W)Choose when cost is primary constraint and AEC-Q101 not required; avoid in space-constrained designs
SI3483DV-T1-GE3Dual P-MOSFET in SC-70-6; RDS(on) = 0.8 Ω @ -4.5 V; Qg = 520 pC; AEC-Q101 qualifiedHigher on-resistance increases conduction loss; smaller package reduces thermal mass and solder joint reliability marginPrefer for legacy SC-70 footprint compatibility; accept trade-off in power efficiency for size reduction

Compared with DMN2023LSD-13 and SI3483DV-T1-GE3, the DMG1023UV-7 uniquely balances AEC-Q101 compliance, ultra-low RDS(on), and SOT563 miniaturization-making it optimal for next-gen automotive and portable medical power gates where thermal headroom and footprint are critical.

Availability

DMG1023UV-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C accessory power management, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for DMG1023UV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMG1023UV-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, low-voltage load switching in harsh-environment automotive and industrial applications.

FAQ

What is the maximum continuous drain current per channel at 85°C ambient?

The DMG1023UV-7 supports -0.68 A continuous drain current per channel at TA = 85°C, derated from 1.03 A at 25°C due to thermal limitations defined by its 235 °C/W RθJA and 530 mW power dissipation rating on FR-4 PCB with minimum pad layout.

Can DMG1023UV-7 be used in a back-to-back configuration for reverse-current blocking?

Yes - its dual P-channel structure supports back-to-back connection (S1–D2 and S2–D1 tied) to block reverse current in battery-powered systems. Each channel's -20 V VDSS and low leakage (<100 nA) ensure effective bidirectional blocking without external diodes.

Is the SOT563 package lead-free and RoHS compliant?

Yes - the DMG1023UV-7 uses matte tin annealed over copper leadframe and green molding compound, meeting EU Directive 2011/65/EU (RoHS 2) with no intentionally added lead, halogens, or antimony, and certified to UL 94V-0 flammability standard.

Does the device require external gate resistors for EMI control in 1 MHz switching?

Not strictly required, but recommended - its 622.4 pC Qg and 59.76 pF Ciss suggest moderate gate drive strength needs; a 10 Ω series resistor is validated in the datasheet for clean 1 MHz switching with minimal ringing, improving EMI and reducing shoot-through risk in synchronous topologies.

DMG1023UV-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.03A
Rds On (Max) @ Id, Vgs:
750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
59.76pF @ 16V
Power - Max:
530mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMG1023UV-7 FAQ

1.How can I place an order for DMG1023UV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG1023UV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG1023UV-7 reliable?

The price and inventory of DMG1023UV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1023UV-7 is usually 5 days.

3.What payment methods are accepted for DMG1023UV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1023UV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG1023UV-7?

DMG1023UV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG1023UV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG1023UV-7?

For technical support, including DMG1023UV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1023UV-7 requirements.

6.How does Aetrix verify that DMG1023UV-7 is sourced from the original manufacturer or authorized distributors?

All DMG1023UV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1023UV-7 meets industry standards.

7.What is the process for return or replacement of DMG1023UV-7?

All DMG1023UV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1023UV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG1023UV-7 part is unused and in its original packaging.

Return procedure for DMG1023UV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG1023UV-7 Tags

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