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Diodes Incorporated DMG1023UVQ-13
- Part No.:
- DMG1023UVQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMG1023UVQ-13.pdf
- Description:
- MOSFET 2P-CH 20V 1.03A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:8,605
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Product details
Overview
DMG1023UVQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -20V VDSS, 0.75Ω RDS(on) at VGS = -4.5V and -1.03A continuous drain current at +25°C. It delivers low gate threshold (-1.0V max), fast switching (tD(off) = 28.4ns), and ESD-protected gates, targeting compact DC-DC converter and automotive load-switch applications.
For engineers reviewing the DMG1023UVQ-13 datasheet, DMG1023UVQ-13 pinout, DMG1023UVQ-13 application, or DMG1023UVQ-13 equivalent, key selection criteria include verified dual-channel P-MOSFET topology, AEC-Q101 qualification, SOT563 thermal resistance (RθJA = 235°C/W), and gate charge (Qg = 622pC) for high-efficiency power management design.
Technical Context
This device integrates two matched P-channel MOSFETs in a single SOT563 package with independent gate, source, and drain terminals-enabling synchronous buck topologies or dual-rail load switching. Its -1.0V maximum VGS(th) ensures reliable turn-on with low-voltage control logic (e.g., 1.8V/2.5V I/O), while low Ciss (59pF) and Crss (6.4pF) minimize Miller-induced switching losses.
The MOSFET operates across -55°C to +150°C ambient range and supports automotive-grade reliability via IATF 16949 manufacturing, PPAP capability, and AEC-Q101 stress testing. Thermal performance is validated on FR-4 PCB with 2oz copper and minimum recommended pad layout, delivering 0.53W steady-state power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Withstands up to -20V drain-source voltage without breakdown, suitable for 12V automotive and 5V/3.3V system rails. |
| RDS(on) | 0.75Ω @ VGS = -4.5V - Enables <1.1W conduction loss at 1.03A, critical for thermally constrained space-constrained DC-DC stages. |
| ID (continuous) | -1.03A @ TA = +25°C - Supports sustained load currents in battery-powered PMICs and USB-C power delivery switches. |
| Qg | 622pC - Determines gate drive energy requirement; enables efficient operation with standard logic-level drivers at ≥500kHz switching. |
| tD(off) | 28.4ns - Defines minimum off-time in synchronous converters; allows high-frequency operation with tight dead-time control. |
| VGS(th) | -0.5V to -1.0V - Ensures full enhancement with low-voltage microcontroller GPIOs (e.g., 1.8V logic), reducing need for level shifters. |
| Ciss | 59pF - Low input capacitance reduces gate drive power and improves noise immunity in high-dV/dt environments. |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), molded green plastic (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Common return path for first P-MOSFET; electrically isolated from S2 for dual independent switching. |
| D1 | Drain of Channel 1 | High-side switching node for first channel; connects to input rail in load-switch configuration. |
| G1 | Gate of Channel 1 | Control terminal for Channel 1; requires negative VGS relative to S1 to turn on. |
| S2 | Source of Channel 2 | Independent return path for second P-MOSFET; enables dual-rail or complementary switching. |
| D2 | Drain of Channel 2 | Second high-side switching node; supports redundant or parallel power paths. |
| G2 | Gate of Channel 2 | Independent control input; allows asynchronous or synchronized operation with G1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Two fully isolated enhancement-mode MOSFETs in one SOT563 footprint-reduces board area by ~40% vs. discrete solutions. |
| Low RDS(on) at low VGS | 1.05Ω @ VGS = -2.5V - enables robust turn-on even with weak pull-down drivers or degraded gate drive margins. |
| ESD-protected gate | HBM rating ≥2kV - eliminates need for external gate protection in consumer and industrial assembly lines. |
| AEC-Q101 qualified | Validated for automotive temperature cycling, HTRB, and UHAST - supports under-hood and infotainment power modules. |
| Green, RoHS-compliant construction | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); lead-free per EU RoHS 2015/863/EU. |
Applications
| Automotive Body Control Module (BCM) | USB Type-C Power Delivery Switch |
|---|---|
|
Use Scenario: Controlling 12V accessory loads (e.g., LED lighting, window motors) with reverse-polarity protection and short-circuit current limiting. IC Role / Device Role / Timing Role: Dual-channel high-side load switch providing independent enable control and fault isolation per circuit branch. Use Value: Eliminates need for two separate SOT23-6 devices; leverages -20V rating and AEC-Q101 qualification for direct integration into BCM PCBs. |
Use Scenario: Enabling/disabling VBUS power paths in USB-C receptacles with overcurrent and thermal foldback. IC Role / Device Role / Timing Role: Dual P-MOSFET array implementing redundant power-path control and VCONN switching in CC logic circuits. Use Value: Achieves <1.5Ω total path resistance with 0.75Ω per channel at -4.5V gate drive, minimizing voltage drop during 3A PD negotiation. |
| Industrial IoT Sensor Node Power Management | Portable Medical Device Battery Protection |
|
Use Scenario: Sequencing power to RF transceivers, ADCs, and microcontrollers in battery-operated edge sensors. IC Role / Device Role / Timing Role: Dual independent load switch managing wake-up sequencing and brown-out isolation between subsystems. Use Value: Low 0.20mm pin pitch and 0.006g weight meet strict size/weight targets; -55°C to +150°C operation supports outdoor deployment. |
Use Scenario: Isolating Li-ion battery packs from charging ICs and patient-connected analog front-ends during fault conditions. IC Role / Device Role / Timing Role: Dual-channel reverse-current blocking switch with fast turn-off (tF = 20.7ns) for overvoltage and short-circuit response. Use Value: 622pC Qg enables sub-1μs fault shutdown using standard MCU GPIOs-critical for IEC 60601-1 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1024UVQ-13 | Higher RDS(on) (1.1Ω @ -4.5V), lower ID (-0.85A), identical SOT563 package and AEC-Q101 qualification. | Less suitable for >800mA continuous loads but offers improved gate threshold consistency (±0.1V tighter VGS(th) distribution). | Select when tighter VGS(th) matching across channels is prioritized over conduction loss. |
| Si7157DP-T1-GE3 | Single-channel P-MOSFET in SO-8; RDS(on) = 0.55Ω @ -4.5V, ID = -4.5A, no AEC-Q101 rating. | Requires two devices for dual functionality; larger footprint (5×6mm vs. 1.6×1.6mm) and lacks automotive qualification. | Choose only for non-automotive, high-current (>2A) applications where board space is not constrained. |
Compared with DMG1023UVQ-13, DMG1024UVQ-13 trades conduction efficiency for tighter gate threshold control, while Si7157DP-T1-GE3 sacrifices integration and qualification for higher current handling-making DMG1023UVQ-13 optimal for space-limited, automotive-grade dual-switching needs.
Availability
DMG1023UVQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and portable medical device battery protection requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for DMG1023UVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMG1023UVQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-efficiency load switching in automotive and portable electronics.
FAQ
Is DMG1023UVQ-13 pin-compatible with other SOT563 dual MOSFETs?
No-pinout is specific to DMG1023UVQ-13: S1-D1-G1-S2-D2-G2 in top-view order. Competing SOT563 dual MOSFETs (e.g., DMG1024UVQ-13) share identical pin mapping, but non-Diodes parts may differ. Always verify pin function against the official Diodes datasheet DS41660 Rev. 5-2 before layout.
What is the maximum allowable pulsed drain current for DMG1023UVQ-13?
The absolute maximum pulsed drain current is -3A for 10μs pulses at 1% duty cycle, as specified in the "Maximum Ratings" table. This value assumes proper PCB thermal design (FR-4, 2oz copper, minimum pad layout) and does not apply to continuous operation.
Does DMG1023UVQ-13 require external gate resistors for stability?
Not inherently-its low Ciss (59pF) and Crss (6.4pF) reduce susceptibility to oscillation. However, a 10Ω series gate resistor is used in the datasheet's switching time test circuit (Fig. 3) to damp ringing and ensure repeatable tD(on)/tF measurements; design-in may benefit from 5–22Ω depending on driver strength and layout parasitics.
Can DMG1023UVQ-13 be used in linear regulation mode?
No-it is optimized for switching operation only. The RDS(on) variation with temperature (Fig. 6) and lack of Safe Operating Area (SOA) curves in the datasheet indicate it is not characterized for linear (active-region) biasing. Use only in saturated on/off states for load switching or synchronous rectification.
DMG1023UVQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.03A (Ta)
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.622nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 59pF @ 16V
- Power - Max:
- 530mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMG1023UVQ-13 FAQ
1.How can I place an order for DMG1023UVQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG1023UVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG1023UVQ-13 reliable?
The price and inventory of DMG1023UVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1023UVQ-13 is usually 5 days.
3.What payment methods are accepted for DMG1023UVQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1023UVQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG1023UVQ-13?
DMG1023UVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG1023UVQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG1023UVQ-13?
For technical support, including DMG1023UVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1023UVQ-13 requirements.
6.How does Aetrix verify that DMG1023UVQ-13 is sourced from the original manufacturer or authorized distributors?
All DMG1023UVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1023UVQ-13 meets industry standards.
7.What is the process for return or replacement of DMG1023UVQ-13?
All DMG1023UVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1023UVQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG1023UVQ-13 part is unused and in its original packaging.
Return procedure for DMG1023UVQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG1023UVQ-13 Tags
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