Diodes Incorporated DMG1026UV-7

Overview

DMG1026UV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V V_DSS, 1.8Ω R_DS(ON) at V_GS = 10V and 440mA I_D (pulsed), designed for compact, high-efficiency power switching in space-constrained battery-powered systems.

For engineers reviewing the DMG1026UV-7 datasheet, DMG1026UV-7 pinout, DMG1026UV-7 application, or DMG1026UV-7 equivalent, this part supports low-voltage logic-level drive, fast switching in DC-DC converters, and dual-load control in portable electronics where thermal resistance (R_θJA = 213°C/W) and gate charge (Q_g = 0.45nC) directly impact efficiency and layout density.

Technical Context

This dual MOSFET integrates two independent N-channel devices with matched threshold voltage (V_GS(TH) = 0.5–1.8V) and low input capacitance (C_iss = 32pF), enabling synchronous operation without cross-conduction risk. Each channel features integrated gate protection diodes and exhibits low leakage (I_DSS ≤ 1.0µA at V_DS = 50V).

Its SOT563 package supports high-density routing with six terminals-two source pins shared per channel, separate gates and drains-and is qualified to JEDEC reliability standards. The device operates across –55°C to +150°C, with R_DS(ON) increasing only 1.8× from 25°C to 125°C at V_GS = 4.5V.

Key Specifications

Pinout & Package

Package: SOT563 - ultra-compact 1.6mm × 1.2mm × 0.5mm surface-mount package with exposed thermal pad (not electrically connected), rated for moisture sensitivity level 1 and RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMG1026UV-7, DMN2041LSD-13 trades voltage rating for lower cost in 24V designs, while AOB2018L delivers superior power handling at the expense of PCB real estate and added protection components-making DMG1026UV-7 optimal for miniaturized, logic-driven dual-switching where 60V tolerance and 2kV ESD immunity are critical.

Availability

DMG1026UV-7 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and DC-DC converter power stages requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMG1026UV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMG1026UV-7 belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for space-constrained, low-voltage switching applications where gate drive simplicity, thermal efficiency, and JEDEC-qualified reliability are mandatory.

FAQ

Is DMG1026UV-7 suitable for 3.3V microcontroller GPIO direct drive?

Yes. Its gate threshold voltage (V_GS(TH) = 0.5–1.8V) and R_DS(ON) = 2.1Ω at V_GS = 4.5V ensure full enhancement with 3.3V logic. Measured transfer characteristics confirm ≥200mA drain current at 3.3V V_GS, making it compatible with most ARM Cortex-M and ESP32 GPIO outputs without level shifters.

What is the maximum safe operating temperature for continuous 410mA drain current?

At 410mA continuous I_D and T_A = +85°C, junction temperature remains within limit (T_J ≈ 132°C) using the specified FR-4 pad layout. Derating is required above 85°C ambient: max I_D drops to 300mA at 85°C and 270mA at 85°C with V_GS = 4.5V, per datasheet thermal derating curves.

Does DMG1026UV-7 include body diode functionality for flyback energy recovery?

Yes. Each channel includes an intrinsic N-channel body diode with V_SD = 0.8–1.3V at 200mA, confirmed in Figure 8. This enables freewheeling in inductive loads like solenoids and relays, though external Schottky diodes are recommended for high-frequency (>500kHz) or high-efficiency recovery paths.

How does the SOT563 package affect thermal performance compared to SOT23-6?

SOT563 has 30% smaller footprint than SOT23-6 but achieves comparable R_θJA (213°C/W vs. ~220°C/W) due to optimized leadframe thermal path and thinner mold compound. Its 0.5mm height improves airflow in stacked modules, though absolute power dissipation remains limited to 0.58W at 25°C ambient.