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Diodes Incorporated DMG1029SV-7

Part No.:
DMG1029SV-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMG1029SV-7.pdf
Description:
MOSFET N/P-CH 60V 0.5A SOT563
Quantity:
Payment:
Payment
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Inventory:407,478

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Product details

Overview

DMG1029SV-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SOT563 package, integrating one N-channel (60V, 1.7Ω @ 10V) and one P-channel (–60V, 4Ω @ –10V) device for bidirectional switching in compact power management circuits. It delivers low gate threshold voltage (1.0–2.5V for Q1, –1.0 to –3.0V for Q2), fast switching (tD(on) ≤ 5.5ns for Q2), and ultra-small footprint for space-constrained DC-DC converters and load switches.

For engineers reviewing the DMG1029SV-7 datasheet, DMG1029SV-7 pinout, DMG1029SV-7 application, or DMG1029SV-7 equivalent, key selection criteria include complementary VDS rating symmetry, RDS(on) matching at 4.5V/–4.5V, thermal resistance (RθJA = 129°C/W under 1-in² copper), and AEC-Q101 qualification for automotive-grade reliability validation.

Technical Context

This dual MOSFET implements independent N- and P-channel channels sharing a common SOT563 thermally optimized leadframe. Each channel features low-input capacitance (Ciss = 30pF / 25pF), tightly controlled VGS(th) windows, and body diodes with VSD = ±1.4V rated at ±115mA - enabling efficient synchronous rectification and bidirectional current control without external diodes.

The device operates across –55°C to +150°C junction temperature, with pulsed drain current ratings of 1A (Q1) and –650mA (Q2), and thermal derating defined for both steady-state (RθJA = 281°C/W on minimal pad) and enhanced layout (RθJA = 129°C/W on 1-in² copper). Gate charge values (Qg = 0.3nC / 0.28nC) support high-frequency PWM operation up to several MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDS Rating 60V (N-ch), –60V (P-ch): Enables rail-to-rail switching in 24V/48V industrial and automotive supply domains.
RDS(on) @ VGS = 10V/–10V 1.7Ω (Q1), 4Ω (Q2): Supports ≥500mA continuous conduction with <0.425W conduction loss at full load.
RDS(on) @ VGS = 4.5V/–4.5V 3Ω (Q1), 6Ω (Q2): Ensures functional switching down to 3.3V logic-level drive in battery-powered systems.
Qg 0.3nC (Q1), 0.28nC (Q2): Minimizes gate drive power and enables <10ns switching transitions with 25Ω source impedance.
TJ Range –55°C to +150°C: Qualified for under-hood automotive and industrial ambient environments without derating.
PD (1-in² copper) 1W at +25°C: Allows sustained 500mA operation in compact PCB layouts with localized thermal relief.

Pinout & Package

SOT563 is a 6-pin ultra-thin, lead-free surface-mount package (1.6mm × 1.2mm × 0.5mm) with exposed thermal pad and matte tin-plated copper leadframe. Its symmetrical pin arrangement supports dual-channel routing with minimal board area.

Pin/Terminal Circuit Role Design Meaning
1 (G1) N-channel gate Logic-level input for high-side N-MOS control; requires no level-shifting when driven by 3.3V/5V microcontrollers.
2 (S1) N-channel source Common source node for N-ch; connects to ground or low-side return path in half-bridge configurations.
3 (D1) N-channel drain High-side output node; carries load current to VIN in high-side switch applications.
4 (D2) P-channel drain Low-side output node; sinks current from load to ground in complementary switching topologies.
5 (S2) P-channel source Common source node for P-ch; ties to VIN in high-side P-MOS or bidirectional switch designs.
6 (G2) P-channel gate Inverted logic input; active-low control enables direct interface with open-drain drivers or inverted PWM signals.

Key Features

Feature Design Value
Complementary channel pairing Matched VDS, VGS(th), and RDS(on) tolerance enables balanced push-pull and H-bridge operation without external balancing components.
Low gate threshold voltage VGS(th) = 1.0–2.5V (Q1), –1.0 to –3.0V (Q2) ensures reliable turn-on with standard logic outputs and reduces gate drive complexity.
Ultra-small SOT563 footprint 1.6mm × 1.2mm outline saves >60% board area vs. discrete SO-8 dual MOSFETs, critical for wearables and portable medical devices.
AEC-Q101 qualification Validated for automotive applications including body control modules and LED lighting drivers requiring PPAP documentation and zero-defect reliability.

Applications

USB Power Delivery Switching Automotive LED Headlight Dimming

Use Scenario: Bidirectional 5V/20V USB PD port protection and direction control in portable chargers and docking stations.

IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS path integrity and reverse-current blocking during voltage negotiation.

Use Value: RDS(on) ≤ 3Ω at 4.5V ensures <150mV drop at 50mA, preserving USB PD voltage compliance while enabling sub-10ns fault response.

Use Scenario: PWM-controlled dimming of 12V automotive LED headlamps with overvoltage and thermal foldback protection.

IC Role / Device Role / Timing Role: Complementary half-bridge driver delivering precise current regulation via synchronized N/P gate timing.

Use Value: Matched tD(off) (15.7ns Q1 / 10.6ns Q2) minimizes shoot-through risk, supporting >20kHz dimming without external dead-time circuitry.

Industrial Sensor Signal Conditioning Medical Infusion Pump Motor Control

Use Scenario: Low-power analog multiplexing and sensor bias switching in battery-operated environmental monitoring nodes.

IC Role / Device Role / Timing Role: Precision analog switch isolating sensor inputs during ADC sampling cycles to prevent crosstalk and leakage.

Use Value: IDSS ≤ 10nA (Q1) and ≤ 25nA (Q2) ensures <1μV offset error in 10MΩ sensor bridges, maintaining 16-bit measurement fidelity.

Use Scenario: Microstepping control of bipolar stepper motors in portable infusion pumps requiring silent, low-EMI actuation.

IC Role / Device Role / Timing Role: H-bridge driver stage translating MCU PWM into bidirectional coil current with integrated body diode recovery.

Use Value: VSD = ±1.4V at ±115mA enables efficient freewheeling without external Schottky diodes, reducing BOM count and EMI emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2053LW-7 Single N-channel only (20V, 0.045Ω), no P-channel complement; requires external P-MOS for bidirectional use. Limited to high-side-only or discrete half-bridge designs; lacks integrated thermal tracking between channels. Select when only N-ch switching is needed and board space allows separate P-MOS placement.
FDMA1027NZ Complementary pair in WDFN-6 (2×2mm); RDS(on) = 2.2Ω/4.5Ω @ 4.5V, higher Ciss (42pF/35pF), no AEC-Q101 rating. Suitable for consumer-grade power tools but not qualified for automotive temperature cycling or humidity testing. Prefer for cost-sensitive non-automotive applications where 0.4mm height tolerance permits larger package.

Compared with DMN2053LW-7 and FDMA1027NZ, DMG1029SV-7 uniquely combines AEC-Q101 qualification, matched complementary RDS(on) at logic-level drive, and smallest industry-standard footprint - making it optimal for space- and reliability-critical automotive and portable medical systems.

Availability

DMG1029SV-7 is available at Aetrix Electronics and suitable for USB PD power switching, automotive LED dimming, industrial sensor multiplexing, and medical infusion pump motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMG1029SV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

The DMG1029SV-7 belongs to Diodes' high-density complementary MOSFET product line, engineered specifically for miniaturized bidirectional switching in safety-critical and thermally constrained applications.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C, the N-channel (Q1) supports 400mA continuous drain current with VGS = 10V, while the P-channel (Q2) supports –280mA with VGS = –10V. These values reflect thermal derating per the datasheet's "Steady State" condition on FR-4 with minimum pad layout; using 1-inch square copper increases Q1 to 480mA and Q2 to –320mA.

Can DMG1029SV-7 be used in a synchronous buck converter as high-side and low-side switches?

No - DMG1029SV-7 integrates one N-channel and one P-channel MOSFET, but its P-channel is not optimized for low-side synchronous rectification due to higher RDS(on) (4Ω vs. typical <10mΩ in dedicated low-side N-MOS). It is designed for complementary load switching, not power-stage topology replacement. Use discrete N-N pairs like DMN3029LSD-13 for true synchronous buck stages.

Is the SOT563 package thermally enhanced, and how does it compare to SOT23-6?

Yes - the SOT563 package features an exposed thermal pad and 0.5mm profile optimized for heat dissipation in ultra-thin assemblies. Compared to SOT23-6, it offers 35% smaller footprint (1.6×1.2mm vs. 2.9×1.6mm) and lower RθJA (129°C/W vs. ~200°C/W on identical copper area), enabling higher power density in wearable and implantable electronics.

Does the DMG1029SV-7 meet halogen-free and antimony-free "Green" requirements?

Yes - DMG1029SV-7 is certified halogen- and antimony-free per Diodes Incorporated's "Green" definition: Br < 900ppm, Cl < 900ppm (total Br+Cl < 1500ppm), and Sb < 1000ppm. It is also fully RoHS 2 compliant (2011/65/EU) with matte tin annealed leadframe and green molding compound rated UL 94V-0.

DMG1029SV-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
500mA, 360mA
Rds On (Max) @ Id, Vgs:
1.7Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
30pF @ 25V, 25pF @ 25V
Power - Max:
450mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMG1029SV-7 FAQ

1.How can I place an order for DMG1029SV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG1029SV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG1029SV-7 reliable?

The price and inventory of DMG1029SV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG1029SV-7 is usually 5 days.

3.What payment methods are accepted for DMG1029SV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG1029SV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG1029SV-7?

DMG1029SV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG1029SV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG1029SV-7?

For technical support, including DMG1029SV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG1029SV-7 requirements.

6.How does Aetrix verify that DMG1029SV-7 is sourced from the original manufacturer or authorized distributors?

All DMG1029SV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG1029SV-7 meets industry standards.

7.What is the process for return or replacement of DMG1029SV-7?

All DMG1029SV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG1029SV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG1029SV-7 part is unused and in its original packaging.

Return procedure for DMG1029SV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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