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Diodes Incorporated DMG2301LK-13
- Part No.:
- DMG2301LK-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMG2301LK-13.pdf
- Description:
- MOSFET P-CH 20V 2.4A SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:8,581
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Product details
Overview
DMG2301LK-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT23 package, rated for -20V VDSS, 160mΩ RDS(ON) at VGS = -4.5V, and -2.4A continuous drain current at TA = +25°C. It serves as a low-side load switch or reverse-polarity protection device in space-constrained DC-DC converters and backlighting circuits.
For engineers reviewing the DMG2301LK-13 datasheet, DMG2301LK-13 pinout, DMG2301LK-13 application, or DMG2301LK-13 equivalent, key selection criteria include verified RDS(ON) at low gate drive (-2.5V), ESD-protected gate, fast switching (tF = 10.5ns), and thermal resistance of 91°C/W on standard FR-4 layout.
Technical Context
This MOSFET uses a trench-gate process to achieve low on-resistance while maintaining controlled gate charge (Qg = 1.6nC at VGS = -4.5V) and low output capacitance (Coss = 36pF). Its gate threshold voltage range (-0.3V to -1.0V) enables reliable turn-on with logic-level negative gate drive.
The integrated ESD protection diode across gate-source and body diode forward voltage (VSD = -0.8V to -1.2V at IS = -1.0A) support robust operation in portable power rails. Thermal performance is characterized for both steady-state (RθJA = 91°C/W) and pulsed conditions per JEDEC standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-source blocking voltage before avalanche conduction |
| RDS(ON) | 160mΩ @ VGS = -4.5V, ID = -1.0A - On-resistance directly impacts conduction loss in high-efficiency power switches |
| ID (max) | -2.4A @ TA = +25°C - Continuous current rating under standard PCB thermal conditions |
| Qg | 1.6nC @ VGS = -4.5V - Total gate charge determines drive strength requirement and switching loss |
| Ciss | 156pF @ VDS = -6V - Input capacitance affects gate driver loading and high-frequency stability |
| tF | 10.5ns - Fall time defines minimum achievable PWM frequency and transition loss |
| RθJA | 91°C/W - Junction-to-ambient thermal resistance on recommended pad layout for thermal design margining |
Pinout & Package
Package: SOT23 (Standard), surface-mount, 3-terminal plastic package with matte tin annealed terminals; UL 94V-0 rated molding compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for P-channel conduction | Connected to system ground or higher potential rail depending on switch topology |
| 2 (Gate) | Control electrode for channel formation | ESD-protected input requiring < ±12V drive; threshold centered at -0.6V |
| 3 (Drain) | Current entry point during conduction | Connected to load; handles full -20V blocking and -2.4A continuous current |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at -2.5V gate drive | 210mΩ - Enables use with 2.5V/3.3V logic controllers without level-shifting |
| Fast switching with low Qgd | 0.4nC - Reduces Miller-induced switching delay and improves hard-switching efficiency |
| ESD-protected gate | ±10µA IGSS max at ±10V - Withstands >2kV HBM without external protection circuitry |
| Green, RoHS-compliant construction | <900ppm Br+Cl, <1000ppm Sb - Meets automotive and industrial environmental compliance mandates |
| JEDEC-qualified reliability | AEC-Q200 stress-tested - Validated for extended temperature cycling and humidity exposure |
Applications
| Backlight LED Power Switch | USB Port Reverse-Polarity Protection |
|---|---|
|
Use Scenario: Driving white LED strings in portable displays using boost converter output. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling current path between boost output and LED cathodes. Use Value: 160mΩ RDS(ON) limits conduction loss to <150mW at 1.2A, preserving battery runtime. |
Use Scenario: Preventing damage when USB cables are inserted with reversed polarity into host ports. IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed in series with VBUS line. Use Value: -20V VDSS withstands transient overvoltage; fast tF ensures no latch-up during plug insertion. |
| DC-DC Converter Synchronous Rectifier | Motor Driver High-Side Bias Control |
|
Use Scenario: Replacing Schottky diode in buck converter output stage for improved efficiency. IC Role / Device Role / Timing Role: Synchronous rectification switch operating in anti-phase with main N-MOSFET. Use Value: Coss = 36pF minimizes ringing; low Qg allows clean gate drive from simple RC network. |
Use Scenario: Enabling/disabling gate bias for high-side N-channel motor driver FETs. IC Role / Device Role / Timing Role: Level-shifted control switch generating isolated gate voltage for upper-half bridge. Use Value: VGS(TH) = -0.6V typical ensures full enhancement with -3.3V logic signal, reducing bootstrap complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2302L-7 | RDS(ON) = 125mΩ @ -4.5V but rated only to -12V VDSS; same SOT23 package | Not suitable for -20V bus systems; better for 12V automotive accessory modules | Select when lower on-resistance is critical and voltage margin can be reduced |
| Si2301BDS-T1-GE3 | RDS(ON) = 115mΩ @ -4.5V; higher Qg (2.4nC); no ESD rating specified | Lacks documented ESD protection; requires external gate clamping in noisy environments | Prefer where cost is primary constraint and board-level ESD design is already implemented |
Compared with DMG2301LK-13, DMG2302L-7 trades voltage rating for lower conduction loss, while Si2301BDS-T1-GE3 reduces on-resistance further but increases gate drive demand and removes ESD assurance-making DMG2301LK-13 optimal for compact, robust 20V-referenced power switches.
Availability
DMG2301LK-13 is available at Aetrix Electronics and suitable for backlighting, USB power protection, and DC-DC converter synchronous rectification requiring stable component supply across production lifecycles.
Supply support for DMG2301LK-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.
The DMG2301LK belongs to Diodes' high-reliability logic-level P-channel MOSFET product line, engineered specifically for space-constrained, low-voltage power management in consumer, industrial, and automotive-qualified systems.
FAQ
What is the maximum safe gate-source voltage for DMG2301LK-13?
The absolute maximum VGS rating is ±12V per the datasheet's "Maximum Ratings" table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should remain within -4.5V to 0V in normal switching, leveraging its -0.6V typical VGS(TH) for full enhancement without overdrive.
Can DMG2301LK-13 replace an N-channel MOSFET in high-side switching configurations?
No-it is a P-channel device optimized for low-side or high-side switch topologies where the source connects to a fixed rail. In true high-side N-MOSFET replacement, a charge pump or floating gate driver is required; DMG2301LK-13 simplifies this by enabling direct logic-level control without auxiliary circuitry when used in source-follower configuration.
Is DMG2301LK-13 qualified for automotive applications?
The base DMG2301LK-13 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMG2301LKQ-13) with AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing-these carry a "Q" suffix and are listed in Diodes' automotive product portal.
How does the 91°C/W thermal resistance translate to real-world power dissipation?
With RθJA = 91°C/W and a maximum junction temperature of +150°C, the device can dissipate 0.84W continuously at TA = +25°C ambient (ΔT = 125°C ÷ 91°C/W). At 70°C ambient, derated power drops to ~0.62W-confirming suitability for low-duty-cycle or thermally managed PCB layouts.
DMG2301LK-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.4 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 156 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 840mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMG2301LK-13 FAQ
1.How can I place an order for DMG2301LK-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG2301LK-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG2301LK-13 reliable?
The price and inventory of DMG2301LK-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG2301LK-13 is usually 5 days.
3.What payment methods are accepted for DMG2301LK-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG2301LK-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG2301LK-13?
DMG2301LK-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG2301LK-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG2301LK-13?
For technical support, including DMG2301LK-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG2301LK-13 requirements.
6.How does Aetrix verify that DMG2301LK-13 is sourced from the original manufacturer or authorized distributors?
All DMG2301LK-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG2301LK-13 meets industry standards.
7.What is the process for return or replacement of DMG2301LK-13?
All DMG2301LK-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG2301LK-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG2301LK-13 part is unused and in its original packaging.
Return procedure for DMG2301LK-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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