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Diodes Incorporated DMG2302UQ-13

Part No.:
DMG2302UQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMG2302UQ-13.pdf
Description:
MOSFET N-CH 20V 4.2A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,020

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Product details

Overview

DMG2302UQ from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in SOT23 package, with RDS(ON) = 90 mΩ @ VGS = 4.5V and 120 mΩ @ VGS = 2.5V, rated for 4.2A continuous drain current at 25°C. It serves as a low-voltage power switch in DC-DC boost converters, load switching, and analog signal routing circuits.

For engineers reviewing the DMG2302UQ datasheet, DMG2302UQ pinout, DMG2302UQ application, or DMG2302UQ equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (7.0 nC), fast switching (tD(on) = 7.4 ns), and operation down to –55°C ambient temperature in automotive and industrial power management designs.

Technical Context

This MOSFET uses planar trench-gate technology optimized for low RDS(ON) while maintaining low Ciss (594 pF) and Crss (57.7 pF), enabling high-efficiency synchronous rectification and compact DC-DC converter designs. Its VGS(TH) range of 0.4–1.0 V supports direct interfacing with 1.8 V and 2.5 V logic controllers.

The device features integrated body diode with VSD = 0.75 V @ IS = 1 A and exhibits normalized RDS(ON) drift of ≤1.8× from –55°C to +150°C, ensuring stable conduction across extended thermal ranges in automotive under-hood applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - Maximum blocking voltage for 12 V rail switching and 5 V logic-level power path isolation
RDS(ON) 90 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 3.6 A in portable power switches
ID (continuous) 4.2 A @ TA = 25°C - Supports >3 W dissipation on FR-4 PCB with minimum pad layout
Qg 7.0 nC - Reduces gate drive power and enables efficient operation with low-current microcontroller GPIOs
tD(on) 7.4 ns - Allows sub-100 ns switching cycles in high-frequency (>1 MHz) boost regulators
TJ range –55°C to +150°C - Validated for engine control units and industrial motor drives requiring wide thermal margin

Pinout & Package

Package: SOT23 - 3-pin surface-mount plastic package with matte tin–annealed copper leadframe, moisture sensitivity level 1 per J-STD-020, UL 94V-0 rated molding compound.

Pin/Terminal Circuit Role Design Meaning
Source (S) Current return path and reference node Connected to ground or low-side return; forms common node with body diode cathode
Gate (G) Control terminal for channel formation Accepts 0–4.5 V logic signals; requires <7 nC charge for full turn-on; low Ciss minimizes drive burden
Drain (D) Power output terminal Carries switched load current; rated for 20 V max; internal body diode anode connects here

Key Features

Feature Design Value
Low RDS(ON) at 2.5 V drive 120 mΩ enables use with 2.5 V microcontrollers without level-shifting circuitry
Fast switching speed Turn-on delay < 8 ns and rise time < 10 ns support >5 MHz PWM in Class-D audio and LED drivers
AEC-Q101 qualified Validated for automotive applications including body electronics and ADAS power subsystems
Green, halogen-free construction <900 ppm Br/Cl and <1000 ppm Sb ensures compliance with EU RoHS 3 and automotive material declarations

Applications

Automotive Body Control Module USB-C Power Delivery Switch

Use Scenario: Low-side switching of interior lighting, window lift motors, and HVAC actuators in 12 V vehicle systems.

IC Role / Device Role / Timing Role: N-channel load switch controlling up to 4.2 A loads with logic-level gate drive from MCU GPIO.

Use Value: AEC-Q101 qualification and –55°C to +150°C operation ensure reliability in under-dash environments with minimal thermal derating.

Use Scenario: Bidirectional VBUS path control in USB-C PD sink applications with 5–20 V input range.

IC Role / Device Role / Timing Role: Low-RDS(ON) power switch enabling <100 mV drop at 3 A, minimizing heat generation in compact form factors.

Use Value: 90 mΩ RDS(ON) at 4.5 V gate drive reduces conduction loss by >30% vs. legacy 150 mΩ SOT23 MOSFETs in same footprint.

Portable DC-DC Boost Converter Industrial Sensor Interface Switch

Use Scenario: High-efficiency synchronous rectifier in 3.3 V → 5 V/12 V boost converters for battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Fast-switching N-MOSFET replacing Schottky diode to improve efficiency by 8–12% at 1 A load.

Use Value: Qg = 7.0 nC and tr = 9.8 ns allow clean zero-voltage switching transitions at 2 MHz switching frequency.

Use Scenario: Signal-path isolation between analog sensor outputs and ADC inputs in programmable logic controllers.

IC Role / Device Role / Timing Role: Analog switch with low RDS(ON) flatness (<±5% over 0–3 V signal swing) and <100 nA leakage.

Use Value: Low input/output leakage (<100 nA) and 0.75 V body diode forward voltage preserve signal integrity in precision 16-bit measurement systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2055UQ RDS(ON) = 42 mΩ @ VGS = 4.5 V; higher Qg = 10.5 nC; same SOT23 package Better conduction loss but slower switching; suited for lower-frequency, higher-current loads Select when <50 mΩ RDS(ON) is critical and gate drive strength permits higher Qg
AO3400 RDS(ON) = 40 mΩ @ VGS = 10 V; not AEC-Q101 qualified; higher VGS(TH) (0.8–2.0 V) Lacks automotive qualification and has less predictable turn-on at 2.5 V logic levels Use only in non-automotive consumer applications where cost is prioritized over qualification and low-VGS drive

Compared with DMN2055UQ and AO3400, DMG2302UQ offers optimal balance of low gate charge, guaranteed 2.5 V turn-on, and AEC-Q101 compliance-making it preferred for space-constrained automotive and industrial power switches where both efficiency and qualification matter.

Availability

DMG2302UQ is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery switches, and portable DC-DC boost converters requiring stable component supply and long-term lifecycle support.

Supply support for DMG2302UQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing certified to IATF 16949 and product lines focused on power management, signal integrity, and automotive electronics.

The DMG2302UQ belongs to Diodes' Automotive-Qualified Logic-Level MOSFET product line, designed specifically for low-voltage, high-reliability power switching in harsh-environment applications such as engine control, ADAS, and infotainment subsystems.

FAQ

Is DMG2302UQ suitable for 2.5 V logic-level gate drive?

Yes. The device has a guaranteed VGS(TH) of 0.4–1.0 V and delivers RDS(ON) = 120 mΩ at VGS = 2.5 V and ID = 3.1 A, enabling reliable turn-on directly from 2.5 V microcontrollers without level shifters or external biasing.

What is the maximum power dissipation on a standard FR-4 PCB?

At TA = +25°C, the maximum power dissipation is 0.8 W with minimum recommended pad layout. This corresponds to ~3.6 A continuous current at 90 mΩ RDS(ON), assuming negligible ambient temperature rise and no forced airflow.

Does DMG2302UQ have an integrated body diode, and what is its forward voltage?

Yes. It includes a monolithic body diode with VSD = 0.75 V (typical) at IS = 1 A and TA = 25°C. The diode is rated for continuous 2.7 A source current and supports reverse recovery in synchronous buck or boost topologies.

How does thermal performance change at elevated ambient temperatures?

At TA = +70°C, power dissipation derates to 0.5 W due to RθJA = 156°C/W. RDS(ON) increases ~1.5× at 125°C junction temperature, confirmed by Figure 5 in the datasheet, requiring appropriate current derating in sealed enclosures.

DMG2302UQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
90mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
594.3 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
800mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMG2302UQ-13 FAQ

1.How can I place an order for DMG2302UQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG2302UQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG2302UQ-13 reliable?

The price and inventory of DMG2302UQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG2302UQ-13 is usually 5 days.

3.What payment methods are accepted for DMG2302UQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG2302UQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG2302UQ-13?

DMG2302UQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG2302UQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG2302UQ-13?

For technical support, including DMG2302UQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG2302UQ-13 requirements.

6.How does Aetrix verify that DMG2302UQ-13 is sourced from the original manufacturer or authorized distributors?

All DMG2302UQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG2302UQ-13 meets industry standards.

7.What is the process for return or replacement of DMG2302UQ-13?

All DMG2302UQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG2302UQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG2302UQ-13 part is unused and in its original packaging.

Return procedure for DMG2302UQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG2302UQ-13 Tags

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