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Diodes Incorporated DMG302PU-13
- Part No.:
- DMG302PU-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMG302PU-13.pdf
- Description:
- MOSFET P-CH 25V 170MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:7,935
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Product details
Overview
DMG302PU-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT23 package, rated for -25V V(BR)DSS, 2.5Ω RDS(ON) @ VGS = -4.5V, and -0.17A ID at TA = +25°C, with gate ESD protection >6kV HBM. It serves as a low-power load switch or synchronous rectifier in compact DC-DC converters.
For engineers reviewing the DMG302PU-13 datasheet, DMG302PU-13 pinout, DMG302PU-13 application, or DMG302PU-13 equivalent, key selection criteria include gate threshold voltage (-0.65 to -1.5V), low input capacitance (27.2pF Ciss), fast switching (4.5ns td(on)), thermal resistance (376°C/W RθJA), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(ON) while maintaining controlled gate charge (0.35nC Qg) and low Crss (1.7pF), enabling efficient operation in high-frequency, low-duty-cycle power management circuits. Its negative VGS(th) range ensures reliable turn-on with standard logic-level drive down to -2.7V.
The integrated body diode exhibits VF = -1.5V at IS = -0.2A and supports bidirectional current flow in flyback or buck-boost topologies. Thermal performance is defined for FR-4 PCB mounting with minimum pad layout (RθJA = 376°C/W) or enhanced copper area (RθJA = 275°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -25V - Maximum drain-source blocking voltage before avalanche conduction |
| RDS(ON) | 2.5Ω @ VGS = -4.5V - On-resistance determines conduction loss in load-switching applications |
| ID (max) | -0.17A @ TA = +25°C - Continuous drain current limit under standard PCB thermal conditions |
| VGS(th) | -0.65 to -1.5V - Gate threshold range enabling compatibility with 3.3V/5V logic control |
| Ciss | 27.2pF - Input capacitance affecting gate drive strength and switching speed |
| Qg | 0.35nC - Total gate charge defining energy required per switching cycle |
| RθJA | 376°C/W - Junction-to-ambient thermal resistance on minimal FR-4 layout |
| ESD HBM | >6kV - Robustness against human-body-model electrostatic discharge during handling |
Pinout & Package
Package: SOT23 - Surface-mount plastic package with 3 terminals, UL 94V-0 flammability rating, moisture sensitivity level 1, and 0.008g typical weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Current sink node | Connected to higher potential side of load; handles full switched current and blocking voltage |
| G (Gate) | Control terminal | Receives negative voltage relative to source to turn on; protected by integrated ESD diode |
| S (Source) | Reference node | Common return path for drain current; tied to system ground or positive rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 2.5Ω @ -4.5V enables <100mW conduction loss at 0.15A, critical for battery-powered efficiency |
| Logic-level gate drive | VGS(th) down to -0.65V allows direct interface with 3.3V microcontrollers without level-shifting |
| Fast switching | 4.5ns turn-on delay + 2.3ns rise time supports >1MHz DC-DC operation with minimal dead-time loss |
| AEC-Q101 qualified | Validated for automotive temperature range (-55°C to +150°C) and reliability stress testing |
| Green packaging | Halogen- and antimony-free, fully RoHS-compliant construction with matte tin lead finish |
Applications
| USB Port Power Switching | Automotive Body Control Module |
|---|---|
Use Scenario: Selectively enabling/disabling 5V power to USB peripherals in portable medical devices or industrial handhelds. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path with fast enable/disable response. Use Value: 2.5Ω RDS(ON) limits voltage drop to <400mV at 150mA, preserving USB spec compliance; ESD protection prevents field failures during hot-plug events. | Use Scenario: Driving LED status indicators and small solenoids in door module ECUs operating across -40°C to +105°C ambient. IC Role / Device Role / Timing Role: High-side switch for 12V loads using charge-pump gate drive or discrete level shifter. Use Value: AEC-Q101 qualification ensures lifetime reliability; -25V rating provides 2× margin over 12V automotive rail transients. |
| IoT Sensor Node Power Gating | Low-Power Buck Converter Synchronous Rectifier |
Use Scenario: Shutting down RF transceivers and analog front-ends between measurement cycles in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch isolating subsystems during sleep mode. Use Value: IDSS ≤ -1µA minimizes leakage-induced battery drain; SOT23 footprint saves board space in sub-10mm² modules. | Use Scenario: Replacing Schottky diode in 3.3V-output buck converter for wearables, improving efficiency at light loads. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by controller's complementary gate signal. Use Value: 0.35nC Qg reduces gate drive loss; body diode VF = -1.5V sets reverse recovery baseline for controller timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(ON) = 3.5Ω @ -4.5V; Qg = 0.5nC; no AEC-Q101 rating | Higher conduction loss; suitable for commercial-grade consumer products only | Select when cost sensitivity outweighs automotive qualification and efficiency targets |
| AO3401 | RDS(ON) = 4.5Ω @ -4.5V; VGS(th) = -0.7 to -1.3V; RθJA = 190°C/W (enhanced layout) | Lower thermal performance on minimal PCB; wider VGS(th) distribution affects turn-on consistency | Prefer for designs with larger copper areas and non-automotive environments where gate drive margin is ample |
Compared with Si2301DDS-T1-GE3 and AO3401, DMG302PU-13 delivers lowest RDS(ON) and highest ESD robustness in SOT23, making it optimal for space-constrained, reliability-critical, and battery-sensitive applications where gate drive voltage may dip near -2.7V.
Availability
DMG302PU-13 is available at Aetrix Electronics and suitable for USB power switching, automotive body electronics, IoT sensor node power gating, and low-power synchronous rectification requiring stable component supply and long-term lifecycle support.
Supply support for DMG302PU-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
The DMG302PU belongs to Diodes' "PowerMOS" product line, engineered for ultra-compact, high-efficiency switching in battery-powered and automotive systems where low RDS(ON), fast switching, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current for DMG302PU-13 at 70°C ambient?
At TA = +70°C, the continuous drain current is -0.14A when VGS = -4.5V and -0.12A when VGS = -2.7V, based on thermal derating from the 0.33W power dissipation limit and 376°C/W junction-to-ambient resistance on standard FR-4 layout.
Does DMG302PU-13 require external gate resistors for ESD protection?
No - the device integrates gate protection diodes rated for >6kV Human Body Model ESD, eliminating need for external series resistors in most PCB layouts; however, a small gate resistor (10–100Ω) is still recommended to damp ringing in high-speed switching applications.
Can DMG302PU-13 be used in high-side switch configurations?
Yes - as a P-channel MOSFET, it is inherently suited for high-side switching; proper gate drive must pull the gate below the source (e.g., using a charge pump or level shifter) to achieve sufficient VGS for low RDS(ON), especially at elevated temperatures where VGS(th) shifts negatively.
Is the SOT23 package of DMG302PU-13 compatible with reflow soldering per J-STD-020?
Yes - the SOT23 package is rated for moisture sensitivity level 1 and is fully compatible with standard Pb-free reflow profiles; terminal plating uses annealed matte tin over Alloy 42, meeting MIL-STD-202 Method 208 solderability requirements.
DMG302PU-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 4.5 V
- Vgs (Max):
- -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27.2 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMG302PU-13 FAQ
1.How can I place an order for DMG302PU-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG302PU-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG302PU-13 reliable?
The price and inventory of DMG302PU-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG302PU-13 is usually 5 days.
3.What payment methods are accepted for DMG302PU-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG302PU-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG302PU-13?
DMG302PU-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG302PU-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG302PU-13?
For technical support, including DMG302PU-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG302PU-13 requirements.
6.How does Aetrix verify that DMG302PU-13 is sourced from the original manufacturer or authorized distributors?
All DMG302PU-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG302PU-13 meets industry standards.
7.What is the process for return or replacement of DMG302PU-13?
All DMG302PU-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG302PU-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG302PU-13 part is unused and in its original packaging.
Return procedure for DMG302PU-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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