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Diodes Incorporated DMG3407SSN-7

Part No.:
DMG3407SSN-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMG3407SSN-7.pdf
Description:
MOSFET P-CH 30V 4A SC59
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,594

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Product details

Overview

DMG3407SSN-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SC59 package, rated for -30V VDSS, 50 mΩ RDS(ON) @ VGS = -10V, and -4.0A continuous drain current at TA = +25°C. It serves as a low-side load switch or synchronous rectifier in compact DC-DC converters.

For engineers reviewing the DMG3407SSN-7 datasheet, DMG3407SSN-7 pinout, DMG3407SSN-7 application, or DMG3407SSN-7 equivalent, key selection criteria include verified RDS(ON) at -4.5V gate drive, thermal resistance (RθJA = 98 °C/W under high-copper PCB conditions), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching speed (tD(ON) = 6.0 ns, tF = 30.7 ns) and low gate charge (Qg = 13.3 nC @ VGS = -10V). Its body diode exhibits VSD = -0.75 V @ IS = -1A and tRR = 8.5 ns, supporting efficient synchronous rectification.

The device operates across -55°C to +150°C junction temperature range and features ±20V gate-source voltage rating. Its SC59 package delivers 0.014 g mass and UL 94V-0 flammability compliance, with matte tin–annealed terminals meeting MIL-STD-202 solderability requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -30 V - Maximum blocking voltage before avalanche conduction in load-switch or high-side configuration
RDS(ON) 50 mΩ @ VGS = -10V, ID = -4.1A - Enables <160 mW conduction loss at 4A load in 12V systems
ID (continuous) -4.0 A @ TA = +25°C - Sustains full-rated current with FR-4 PCB and 2 oz copper thermal pad
Qg 13.3 nC @ VGS = -10V - Reduces gate driver power demand and switching transition time in 500 kHz+ converters
RθJA 98 °C/W (t<10s, 1"×1" 2 oz Cu) - Supports 1.1 W steady-state dissipation without active cooling in space-constrained layouts
VGS(TH) -1.5 V (typ) - Ensures reliable turn-on with standard 3.3V or 5V logic-level gate drivers
Ciss 582 pF - Limits Miller effect and enables stable operation with moderate gate resistance (Rg = 5 Ω)

Pinout & Package

Package: SC59 - Surface-mount plastic package with 3-pin single-row configuration, 0.014 g mass, UL 94V-0 rated molding compound, and matte tin–annealed copper leadframe.

Pin/Terminal Circuit Role Design Meaning
Source (S) Reference node for gate control and current return path Connected to system ground or negative rail; ties directly to internal body diode cathode
Gate (G) Control electrode for channel formation Requires negative bias relative to source; low Ciss enables fast edge rates with minimal driver strength
Drain (D) Current output terminal and high-voltage node Handles full VDSS stress; connects to load or inductive node in buck converter low-side position

Key Features

Feature Design Value
Low RDS(ON) at -4.5V 72 mΩ - Enables direct interface with 5V microcontroller GPIO without level-shifting circuitry
Fast switching speed tF = 30.7 ns - Minimizes dead-time losses in synchronous buck topologies operating above 300 kHz
AEC-Q101 qualified Qualified for automotive powertrain and body electronics - supports extended temperature cycling and HTRB testing
Green packaging Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Meets EU ELV and RoHS 2 directives for end-of-life recyclability
Low leakage IDSS ≤ -1 μA @ VDS = -30V - Prevents standby power drain in always-on battery-powered modules

Applications

USB Power Delivery Switch Automotive Body Control Module

Use Scenario: Bidirectional 5–20V USB PD port protection with reverse-current blocking and hot-swap capability.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET used as ideal diode controller replacement with fast turn-off during fault events.

Use Value: 50 mΩ RDS(ON) limits voltage drop to <100 mV at 2A, preserving PD negotiation margins while enabling <100 ns fault response.

Use Scenario: 12V load switching for interior lighting, door locks, and HVAC actuators in passenger vehicles.

IC Role / Device Role / Timing Role: AEC-Q101-compliant load switch providing overtemperature and short-circuit protection via external controller.

Use Value: -30V rating accommodates load-dump transients up to ISO 7637-2 Pulse 5a; RθJA = 98 °C/W ensures thermal stability at 3.3A continuous in sealed enclosures.

Point-of-Load DC-DC Converter Industrial IoT Sensor Node

Use Scenario: High-efficiency 3.3V/5V buck converter for FPGA or MCU core supply in programmable logic controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 8.5 ns reverse recovery time and low Qgd (1.9 nC) minimize shoot-through risk and enable >92% efficiency at 1 MHz switching frequency.

Use Scenario: Battery-backed sensor hub with ultra-low quiescent current and wake-on-event functionality.

IC Role / Device Role / Timing Role: Load switch isolating non-critical peripherals (e.g., RF transceiver, display) during deep-sleep mode.

Use Value: -1 μA IDSS prevents >1 μA parasitic drain on Li-ion cells; SC59 footprint saves >30% board area vs. SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load-switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3026LSD-13 RDS(ON) = 30 mΩ @ -10V but only rated for -20V VDSS; higher Qg (22 nC) Not suitable for 24V industrial systems or load-dump tolerant designs Select when lower on-resistance is critical and voltage stress remains ≤20V
SI2307DS-T1-GE3 RDS(ON) = 60 mΩ @ -4.5V; no AEC-Q101 qualification; RθJA = 150 °C/W (standard FR-4) Limited to consumer-grade portable devices without automotive or industrial thermal constraints Choose for cost-sensitive, non-automotive applications where gate drive is ≥-10V

Compared with DMN3026LSD-13 and SI2307DS-T1-GE3, the DMG3407SSN-7 uniquely balances -30V robustness, -4.5V logic compatibility, AEC-Q101 qualification, and 98 °C/W thermal performance-making it optimal for space-constrained automotive and industrial power switches requiring both reliability and efficiency.

Availability

DMG3407SSN-7 is available at Aetrix Electronics and suitable for USB power delivery systems, automotive body electronics, and point-of-load DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for DMG3407SSN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMG3407SSN-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability load switching and synchronous rectification in 12V/24V vehicle subsystems and industrial power rails.

FAQ

Is DMG3407SSN-7 suitable for hot-swap applications?

Yes. With -30V VDSS, low RDS(ON), and fast turn-off (tF = 30.7 ns), it supports controlled inrush current limiting and reverse-current blocking in hot-swap circuits. Its AEC-Q101 qualification further validates robustness against voltage transients encountered during live insertion.

What is the maximum safe gate-source voltage for continuous operation?

The absolute maximum VGS is ±20V per the datasheet. For reliable long-term operation, gate drive should be limited to -12V maximum to avoid oxide stress, especially under temperature cycling. The typical VGS(TH) of -1.5V allows full enhancement with -4.5V to -10V logic-level signals.

Does DMG3407SSN-7 require a gate resistor for stability?

A gate resistor (Rg) of 3–10 Ω is recommended to dampen ringing caused by PCB trace inductance interacting with Ciss (582 pF) and Crss (76 pF). This prevents false turn-on due to dv/dt coupling and ensures clean switching edges in high-frequency DC-DC applications.

Can DMG3407SSN-7 replace an N-channel MOSFET in high-side switching?

No. As a P-channel device, it is inherently suited for low-side switching or high-side configurations where the source is tied to the positive rail. Replacing an N-channel high-side switch would require redesigning the gate drive to deliver negative voltage relative to source-making it unsuitable as a drop-in N-channel substitute.

DMG3407SSN-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59-3

DMG3407SSN-7 FAQ

1.How can I place an order for DMG3407SSN-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG3407SSN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG3407SSN-7 reliable?

The price and inventory of DMG3407SSN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG3407SSN-7 is usually 5 days.

3.What payment methods are accepted for DMG3407SSN-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG3407SSN-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG3407SSN-7?

DMG3407SSN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG3407SSN-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG3407SSN-7?

For technical support, including DMG3407SSN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG3407SSN-7 requirements.

6.How does Aetrix verify that DMG3407SSN-7 is sourced from the original manufacturer or authorized distributors?

All DMG3407SSN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG3407SSN-7 meets industry standards.

7.What is the process for return or replacement of DMG3407SSN-7?

All DMG3407SSN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG3407SSN-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG3407SSN-7 part is unused and in its original packaging.

Return procedure for DMG3407SSN-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG3407SSN-7 Tags

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