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Diodes Incorporated DMG3413L-7

Name: DMG3413L-7
Brand: Diodes Incorporated
SKU: DMG3413L-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG3413L-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMG3413L-7.pdf

Description:: MOSFET P-CH 20V 3A SOT23

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Product details

Overview

DMG3413L-7 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in SOT23 package, featuring 95mΩ R_DS(on) at V_GS = −4.5V, 3.0A continuous drain current, and AEC-Q101 qualification for automotive-grade reliability-used as a high-efficiency load switch in DC-DC converter power stages.

For engineers reviewing the DMG3413L-7 datasheet, DMG3413L-7 pinout, DMG3413L-7 application, or DMG3413L-7 equivalent, key selection criteria include gate threshold voltage (−0.6 to −1.3V), low input capacitance (857pF), fast switching times (t_D(off) = 268.8ns), thermal resistance (R_θJA = 94°C/W with thermal vias), and RoHS-compliant green packaging.

Technical Context

This MOSFET operates in enhancement mode with negative gate control logic, requiring V_GS ≤ −0.6V to initiate conduction and fully enhancing at −4.5V. Its body diode supports synchronous rectification in buck converters and reverse-polarity protection circuits.

The device uses a planar trench-gate structure optimized for low R_DS(on) while maintaining controlled Q_g (9.0nC) and Crss (49pF), enabling stable operation in 500kHz–1MHz switching regulators without excessive gate drive loss or voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−20V: Maximum blocking voltage for low-voltage automotive and portable power rails.
R_DS(on)	95mΩ @ V_GS = −4.5V: Enables <100mW conduction loss at 3.0A, critical for thermally constrained SOT23 layouts.
I_D (continuous)	3.0A @ T_A = +25°C: Supports compact point-of-load regulation with minimal heatsinking.
C_iss	857pF: Low input capacitance reduces gate drive power and improves PWM response fidelity.
t_D(off)	268.8ns: Fast turn-off minimizes shoot-through risk in half-bridge configurations.
Q_g	9.0nC: Matches standard 3.3V/5V microcontroller GPIO drive capability without external buffer.
T_J range	−55°C to +150°C: Validated operation across automotive under-hood temperature extremes.

Pinout & Package

SOT23-3 package: surface-mount, 3-terminal plastic case with matte tin-plated copper leadframe; moisture sensitivity level 1 per J-STD-020; UL 94V-0 flammability rating.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher rail in high-side switch configuration; ties to internal body diode anode.
2 (Gate)	Control electrode for channel formation	Receives negative bias relative to source; low C_iss enables direct MCU-level drive with minimal ringing.
3 (Drain)	Main current output terminal	Connects to load or switching node; exposed drain pad not present-thermal path relies on PCB copper and vias.

Key Features

Feature	Design Value
Low R_DS(on) at −4.5V	73mΩ typical ensures <70mW conduction loss at 2.5A, extending battery life in portable DC-DC stages.
Fast switching speed	Turn-off delay of 268.8ns allows stable operation up to 1MHz PWM frequency without dead-time optimization overhead.
AEC-Q101 qualified	Validated for automotive applications including infotainment power supplies and body control modules.
Green RoHS-compliant construction	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets EU ELV and OEM environmental requirements.

Applications

Load Switch in Automotive ECUs

Reverse-Polarity Protection

Use Scenario: Powering microcontrollers and CAN transceivers in engine control units where supply must be isolated during sleep mode.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by MCU GPIO; turns off within 300ns to prevent leakage during deep-sleep states.

Use Value: 2.5A rating and 95mΩ R_DS(on) limit standby current to <10µA while supporting full wake-up load surge.

Use Scenario: Protecting 12V vehicle electronics from accidental battery reversal during jump-start or service.

IC Role / Device Role / Timing Role: In-series P-MOSFET placed between battery and system input; conducts only when V_GS < −0.6V (i.e., correct polarity).

Use Value: Body diode forward voltage (0.8–1.25V) blocks reverse current without external Schottky, reducing BOM count.

Buck Converter Synchronous Rectifier

USB Port Power Switch

Use Scenario: Secondary-side switch in 5V-to-3.3V buck regulator for ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by gate driver IC; commutates at 500kHz with <10ns timing margin.

Use Value: 49pF Crss minimizes Miller-induced false turn-on; 9.0nC Q_g enables efficient 3.3V gate drive.

Use Scenario: Per-port 5V power enable in automotive USB charging hubs with overcurrent detection.

IC Role / Device Role / Timing Role: Load switch controlled by USB controller; responds to fault signals within 1ms to disconnect shorted ports.

Use Value: 130mΩ R_DS(on) at V_GS = −2.5V allows direct logic-level control from 3.3V I/O without level shifter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-GE3	R_DS(on) = 115mΩ @ −4.5V; higher C_iss (1050pF); same SOT23-3 footprint	Lower efficiency in high-current DC-DC stages due to +20% conduction loss	Preferable only if cost sensitivity outweighs thermal performance in low-duty-cycle loads.
AO3401	R_DS(on) = 85mΩ @ −4.5V; higher Q_g (12nC); non-AEC-Q101 rated	Lacks automotive qualification; unsuitable for ECU or body control use	Select only for industrial or consumer applications where AEC-Q101 is not mandated.

Compared with Si2301DS-T1-GE3 and AO3401, DMG3413L-7 delivers optimal balance of low R_DS(on), fast switching, and automotive qualification-making it the preferred choice for thermally constrained, safety-critical 20V power switches where gate drive simplicity and reliability are prioritized.

Availability

DMG3413L-7 is available at Aetrix Electronics and suitable for automotive ECUs, USB power delivery systems, DC-DC converter designs, and reverse-polarity protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for DMG3413L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

The DMG3413L-7 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for robust, low-R_DS(on) switching in space-constrained automotive power rails and portable electronics.

FAQ

What is the maximum safe operating junction temperature for DMG3413L-7?

The absolute maximum junction temperature is +150°C, validated per AEC-Q101 stress testing. Continuous operation above +125°C requires derating per Figure 4 and Figure 6 in the datasheet, where R_DS(on) increases ~1.4× from 25°C to 125°C ambient. Thermal design must ensure R_θJA ≤ 94°C/W with thermal vias for 3.0A loads.

Can DMG3413L-7 be driven directly from a 3.3V microcontroller GPIO?

Yes-its gate threshold voltage ranges from −0.6V to −1.3V, so a 3.3V GPIO pulling the gate to ground (V_GS = −3.3V) fully enhances the channel. At that bias, R_DS(on) is ~85mΩ (typical), well within spec. No level shifter is needed, but ensure gate drive impedance stays below 100Ω to control ringing.

Does DMG3413L-7 include integrated ESD protection?

No-this MOSFET does not integrate ESD protection circuitry. The gate oxide is rated for ±8V V_GSS, and gate-source leakage is specified at ±100nA. External TVS diodes or RC snubbers are recommended in environments with >2kV HBM risk, especially in automotive assembly lines or field-replaceable modules.

How does the body diode performance compare to discrete Schottky diodes in reverse-protection applications?

The intrinsic body diode has V_SD = 0.8–1.25V at −1A, higher than typical Schottky (0.3–0.5V), resulting in ~0.5W extra dissipation at 1A reverse fault. However, its integration eliminates board space and solder joints. For <500mA reverse currents or intermittent faults, it's sufficient; for sustained >1A reverse flow, add a parallel Schottky.

DMG3413L-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 857 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMG3413L-7 FAQ

1.How can I place an order for DMG3413L-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG3413L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG3413L-7 reliable?

The price and inventory of DMG3413L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG3413L-7 is usually 5 days.

3.What payment methods are accepted for DMG3413L-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG3413L-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG3413L-7?

DMG3413L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG3413L-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG3413L-7?

For technical support, including DMG3413L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG3413L-7 requirements.

6.How does Aetrix verify that DMG3413L-7 is sourced from the original manufacturer or authorized distributors?

All DMG3413L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG3413L-7 meets industry standards.

7.What is the process for return or replacement of DMG3413L-7?

All DMG3413L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG3413L-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG3413L-7 part is unused and in its original packaging.

Return procedure for DMG3413L-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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