Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMG3418L-13

Part No.:
DMG3418L-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMG3418L-13.pdf
Description:
MOSFET N-CH 30V 4A SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,134

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMG3418L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V VDSS, 60mΩ RDS(ON) @ 10V VGS, and 4A continuous drain current at 25°C. It delivers low conduction loss and fast switching for compact DC-DC converters, backlighting drivers, and motor control stages in space-constrained power management circuits.

For engineers reviewing the DMG3418L-13 datasheet, DMG3418L-13 pinout, DMG3418L-13 application, or DMG3418L-13 equivalent, key selection criteria include its 4.5V-rated RDS(ON) of 70mΩ, 464.3pF Ciss, 1.9ns tD(ON), thermal resistance of 90°C/W, and SOT23 footprint compatibility with standard PCB layout practices.

Technical Context

This MOSFET employs planar silicon process technology optimized for low gate charge (Qg = 5.5nC) and minimized output capacitance (Coss = 49.5pF), enabling high-frequency operation up to 1MHz in synchronous buck topologies. Its VGS(TH) range of 0.5–1.5V supports direct drive from 3.3V and 5V logic controllers without level shifting.

The device integrates a body diode with VSD = 1.2V @ 2.0A and exhibits stable RDS(ON) over temperature - 0.07Ω at 125°C under 4.5V gate drive - making it suitable for thermally demanding industrial and automotive-adjacent applications where junction temperatures reach 150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 24V systems.
RDS(ON) @ 10V60mΩ - Conduction loss of 960mW at 4A; enables >95% efficiency in 5V-output buck converters.
RDS(ON) @ 4.5V70mΩ - Validated for direct 3.3V/4.5V MCU GPIO drive; avoids need for external gate driver.
Ciss464.3pF - Low input capacitance reduces gate drive power and speeds turn-on with 3Ω source impedance.
tD(ON)1.9ns - Short delay time supports PWM frequencies ≥500kHz without duty cycle distortion.
TJ Range−55°C to +150°C - Enables use in extended-temperature environments including under-hood automotive modules.
PD @ 25°C1.4W - Power dissipation limit on FR-4 with 2oz copper; defines maximum continuous current under natural convection.

Pinout & Package

Package: SOT23 (Standard), surface-mount, 3-terminal plastic case per JEDEC TO-236AB. Dimensions: 2.90 × 2.40 × 1.025 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Current return path for channel conductionConnected to ground or low-side reference; ties directly to PCB ground plane for thermal and EMI control.
2 (Gate)Control electrode for channel formationHigh-impedance input requiring <5.5nC total charge; sensitive to ESD but compatible with 3.3V logic thresholds.
3 (Drain)Main current output terminalCarries switched load current; routed away from noise-sensitive traces due to dV/dt coupling risk during turn-off.

Key Features

FeatureDesign Value
Low RDS(ON) @ 4.5V70mΩ enables efficient 3.3V-driven switching in battery-powered portable devices without gate boosting.
Fast switching speed1.9ns turn-on delay + 1.6ns rise time allows clean 1MHz PWM operation with minimal dead-time overhead.
Low input capacitance464.3pF Ciss reduces gate drive current demand and minimizes Miller-induced shoot-through risk.
Green, RoHS-compliant constructionHalogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IEC 61249-2-21 requirements.

Applications

LED Backlight ControlUSB-C Power Delivery Switch

Use Scenario: Driving white LED strings in thin-profile LCD displays using PWM dimming at 20kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode current; synchronizes with display timing controller.

Use Value: 70mΩ RDS(ON) at 4.5V ensures <100mW conduction loss per string, minimizing thermal impact on display bezel.

Use Scenario: Enabling/disabling 5–20V power paths in USB-C PD sink implementations with dynamic voltage negotiation.

IC Role / Device Role / Timing Role: Load switch managing VBUS routing between port controller and system rails; responds within 100ns to PD policy engine commands.

Use Value: 15A pulsed rating and 30V VDSS support full USB-C PD 3.0 specification compliance up to 100W.

Brushed DC Motor DriverPoint-of-Load Buck Converter

Use Scenario: Half-bridge low-side switch in 12V fan or actuator drivers with PWM frequency ≥25kHz to eliminate audible noise.

IC Role / Device Role / Timing Role: Power stage transistor in discrete H-bridge; commutates motor current with precise edge control.

Use Value: 1.9ns tD(ON) and 2.0ns tF minimize switching transition losses, improving thermal margin by 12% vs. legacy SOT23 MOSFETs.

Use Scenario: High-efficiency 3.3V or 5V output stage in FPGA or SoC power supplies operating at 500kHz–1MHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side; replaces Schottky diode to reduce forward drop.

Use Value: 60mΩ RDS(ON) at 10V cuts conduction loss by 65% versus 0.4V Schottky, increasing light-load efficiency by 8–10 percentage points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13Same SOT23 package; lower RDS(ON) (25mΩ @ 10V) but higher Ciss (720pF); 30V ratingBetter for low-loss, low-frequency switching; less suitable for >500kHz due to higher gate chargeSelect when priority is conduction loss over switching speed; verify gate drive capability for 7.2nC Qg
AO3400SOT23; 42mΩ @ 10V, 55mΩ @ 4.5V; higher ID (5.7A); same VDSSHigher current capacity suits larger motors or multi-rail POLO; slightly larger die increases thermal massChoose for designs needing >4A continuous current or improved thermal derating margin at 70°C ambient

Compared with DMG3418L-13, DMN3025LSD-13 trades faster switching for lower RDS(ON), while AO3400 offers higher current headroom at modest cost premium - both require revalidation of gate drive strength and layout parasitics.

Availability

DMG3418L-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery switching, and brushed DC motor control requiring stable component supply across production ramp and long-term industrial deployment.

Supply support for DMG3418L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMG3418L belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion in consumer, computing, and industrial equipment where low gate charge and thermally robust SOT23 packaging are critical.

FAQ

Is DMG3418L-13 suitable for automotive applications?

No - DMG3418L-13 is not AEC-Q101 qualified. While it operates from −55°C to +150°C and meets RoHS/Green standards, Diodes explicitly states that automotive-grade versions require separate qualification (PPAP, IATF 16949 manufacturing) and must be ordered under distinct part numbers. Use only in non-safety-critical, non-automotive applications unless validated per customer-specific change control.

What is the maximum safe gate-source voltage for DMG3418L-13?

The absolute maximum VGS is ±12V per the datasheet's "Maximum Ratings" table. Exceeding this risks irreversible gate oxide breakdown. For reliable operation, keep VGS between 0V and 10V during normal switching; transient overshoot must be clamped below ±12V using Zener diodes or active gate control.

Can DMG3418L-13 replace a BSS138 in a 3.3V logic interface?

Yes - with caveats. Both are SOT23 N-channel MOSFETs, but DMG3418L-13 has lower RDS(ON) (70mΩ vs. 3.5Ω) and higher ID (3A vs. 0.22A), making it superior for power switching. However, its higher Ciss (464pF vs. 30pF) may slow edge rates in high-speed signal gating; verify timing margins in your specific circuit.

Does DMG3418L-13 have integrated ESD protection on the gate?

No - the datasheet does not specify built-in gate ESD protection structures. The gate oxide is rated for ±12V absolute maximum, and Diodes recommends external protection (e.g., series resistor + TVS clamp) in handling and board-level environments where static discharge exceeds 2kV HBM. Standard ESD precautions during assembly are mandatory.

DMG3418L-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
464.3 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.4W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMG3418L-13 FAQ

1.How can I place an order for DMG3418L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG3418L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG3418L-13 reliable?

The price and inventory of DMG3418L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG3418L-13 is usually 5 days.

3.What payment methods are accepted for DMG3418L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG3418L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG3418L-13?

DMG3418L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG3418L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG3418L-13?

For technical support, including DMG3418L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG3418L-13 requirements.

6.How does Aetrix verify that DMG3418L-13 is sourced from the original manufacturer or authorized distributors?

All DMG3418L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG3418L-13 meets industry standards.

7.What is the process for return or replacement of DMG3418L-13?

All DMG3418L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG3418L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG3418L-13 part is unused and in its original packaging.

Return procedure for DMG3418L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG3418L-13 Tags

  • DMG3418L-13
  • DMG3418L-13 PDF
  • DMG3418L-13 Datasheet
  • DMG3418L-13 Specifications
  • DMG3418L-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMG3418L-13
  • Buy DMG3418L-13
  • DMG3418L-13 Price
  • DMG3418L-13 Distributor
  • DMG3418L-13 Supplier
  • DMG3418L-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER