Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMG4406LSS-13

Part No.:
DMG4406LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMG4406LSS-13.pdf
Description:
MOSFET N CH 30V 10.3A 8-SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,334

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMG4406LSS from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30 V V(BR)DSS, 11 mΩ RDS(ON) @ 10 V VGS, and 10.3 A continuous drain current at 25°C - used in DC-DC converters, backlighting circuits, and load switching stages where low conduction loss and fast switching are critical.

For engineers reviewing the DMG4406LSS datasheet, DMG4406LSS pinout, DMG4406LSS application, or DMG4406LSS equivalent, this device supports high-current, low-voltage switching with AEC-Q101 qualification, SO-8 package thermal performance, and validated UIS ruggedness - key for automotive interior lighting and industrial power rail control.

Technical Context

This MOSFET employs a planar trench-gate structure to balance low RDS(ON) and controlled gate charge (26.7 nC @ 10 V), enabling efficient synchronous rectification and PWM-driven buck/boost stages. Its 125 pF Crss and 21.2 ns tr ensure minimal switching losses in 300–1000 kHz power topologies.

The device integrates a robust body diode with 8.5 ns trr and 7.0 nC Qrr, supporting discontinuous conduction mode (DCM) operation without external freewheeling diodes. Thermal resistance of 6.4 °C/W RθJC enables direct heatsinking in compact SO-8 layouts.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 30 V - Maximum blocking voltage before avalanche onset; sets usable input range for 24 V nominal systems.
RDS(ON) max 11 mΩ @ 10 V VGS - Enables ≤1.1 W conduction loss at 10 A, critical for thermally constrained PCBs.
ID max (TC = 25°C) 10.3 A - Continuous current rating under standard SO-8 FR-4 mounting; defines safe operating area for steady-state loads.
Qg total 26.7 nC @ 10 V - Determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers.
EAS 24 mJ - Avalanche energy rating confirms reliability under inductive turn-off stress in motor or solenoid drives.
RθJC 6.4 °C/W - Junction-to-case thermal resistance allows direct thermal pad coupling to copper planes or small heatsinks.
UIS tested 100% production-tested - Guarantees unclamped inductive switching capability without derating for transient overloads.

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin-plated copper leadframe, UL 94V-0 rated molding compound, and moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Common source connection for all four internal die segments; low-inductance parallel path for return current.
5, 6, 7, 8 Drain (D) Parallel-connected drain terminals forming main power output node; designed for high-current PCB copper pour routing.
G (pin 3 in internal schematic) Gate (G) Single gate terminal (pin 3 per marking diagram); low 1.2 Ω Rg minimizes gate oscillation risk with standard RC snubbing.

Key Features

Feature Design Value
Low RDS(ON) at 4.5 V 15 mΩ - Enables logic-level drive from 5 V microcontrollers without gate boosters in battery-powered systems.
Fast switching tr = 21.2 ns, tf = 5.1 ns - Reduces transition losses in high-frequency DC-DC converters (>500 kHz).
AEC-Q101 qualified Qualified for automotive interior modules - meets temperature cycling, HTRB, and ESD requirements for non-safety-critical ECUs.
Green construction Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with RoHS 2 and JESD22-A110.
SO-8 thermal layout Optimized pad design (AP02001) achieves 61 °C/W RθJA with 1-inch² copper - simplifies thermal validation for industrial designs.

Applications

Automotive Interior Lighting USB-C Power Delivery Switching

Use Scenario: Driving LED strings in vehicle dome lights and map lamps using PWM-controlled buck regulators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier and current sink switch in constant-current LED driver stage.

Use Value: 11 mΩ RDS(ON) limits I²R loss to <1.2 W at 10 A, reducing thermal stress on 2-layer automotive PCBs.

Use Scenario: Load switching in USB-C PD 3.0 power path controllers managing up to 20 V/5 A delivery.

IC Role / Device Role / Timing Role: High-side or low-side power FET enabling/disabling VBUS with <100 ns response to fault signals.

Use Value: 22.3 ns tD(off) and 5.1 ns tf support rapid fault isolation during overcurrent events per USB-PD spec.

Industrial DC-DC Converter Backlight Inverter Control

Use Scenario: Primary-side switch in isolated flyback converters powering PLC I/O modules from 24 V DC rails.

IC Role / Device Role / Timing Role: Main switching transistor handling 30 V input, 10 A peak currents, and 100 kHz switching frequency.

Use Value: 24 mJ EAS rating ensures survival during transformer leakage inductance spikes without external clamping.

Use Scenario: Gate drive switch controlling CCFL or LED backlight inverters in medical display panels.

IC Role / Device Role / Timing Role: High-speed enable/disable switch modulating inverter oscillator output to achieve dimming control.

Use Value: 125 pF Crss and 1281 pF Ciss enable clean square-wave gating with minimal capacitive feedthrough into analog video circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3016LSS Higher RDS(ON): 16 mΩ @ 10 V; lower ID: 8.5 A; same SO-8 package. Less suitable for >8 A continuous loads; higher conduction loss reduces efficiency in high-duty-cycle converters. Select when cost sensitivity outweighs efficiency targets and peak current stays below 7 A.
NTMFS4C09NT1G Lower RDS(ON): 7.5 mΩ @ 10 V; higher ID: 15.5 A; same SO-8 footprint but different pinout (source pins on opposite side). Requires PCB redesign due to reversed source/drain pin mapping; better for high-current server VRMs. Choose only if board revision allows pinout change and thermal margin must exceed 12 A.

Compared with DMN3016LSS and NTMFS4C09NT1G, DMG4406LSS delivers optimal balance of conduction loss, switching speed, and drop-in compatibility in SO-8 - making it preferred for mid-power automotive and industrial DC-DC designs where layout reuse and AEC-Q101 compliance are mandatory.

Availability

DMG4406LSS is available at Aetrix Electronics and suitable for automotive interior lighting, USB-C power delivery switching, and industrial DC-DC converter applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for DMG4406LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

DMG4406LSS belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, medium-voltage power conversion in automotive, industrial, and consumer applications where ruggedness and thermal performance are prioritized.

FAQ

Is DMG4406LSS suitable for automotive under-hood applications?

No - while DMG4406LSS is AEC-Q101 qualified, its maximum junction temperature is 150°C and SO-8 package thermal resistance limits sustained operation above 105°C ambient. It is approved for interior cabin modules (e.g., lighting, infotainment) but not under-hood engine control units.

What is the recommended gate resistor value for 500 kHz switching?

A 3.3 Ω series gate resistor is recommended to dampen ringing while maintaining 21.2 ns rise time; this value balances EMI suppression and switching loss, verified with 12.5 nC Qgs and 1.2 Ω intrinsic Rg per datasheet Figure 11.

Does DMG4406LSS require a Schottky catch diode in synchronous buck topologies?

No - the integrated body diode has 8.5 ns trr and 7.0 nC Qrr, enabling reliable synchronous rectification down to 200 kHz without external diode; however, external Schottky may be added for ultra-low-noise audio applications.

Can DMG4406LSS replace SiC MOSFETs in 30 V systems?

No - SiC devices offer superior high-temperature switching and lower Qg, but DMG4406LSS is optimized for cost-sensitive 30 V silicon solutions where 15 mΩ @ 4.5 V drive and AEC-Q101 compliance are primary selection criteria, not wide-bandgap performance.

DMG4406LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
26.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1281 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMG4406LSS-13 FAQ

1.How can I place an order for DMG4406LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4406LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4406LSS-13 reliable?

The price and inventory of DMG4406LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4406LSS-13 is usually 5 days.

3.What payment methods are accepted for DMG4406LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4406LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4406LSS-13?

DMG4406LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4406LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4406LSS-13?

For technical support, including DMG4406LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4406LSS-13 requirements.

6.How does Aetrix verify that DMG4406LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMG4406LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4406LSS-13 meets industry standards.

7.What is the process for return or replacement of DMG4406LSS-13?

All DMG4406LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4406LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4406LSS-13 part is unused and in its original packaging.

Return procedure for DMG4406LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG4406LSS-13 Tags

  • DMG4406LSS-13
  • DMG4406LSS-13 PDF
  • DMG4406LSS-13 Datasheet
  • DMG4406LSS-13 Specifications
  • DMG4406LSS-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMG4406LSS-13
  • Buy DMG4406LSS-13
  • DMG4406LSS-13 Price
  • DMG4406LSS-13 Distributor
  • DMG4406LSS-13 Supplier
  • DMG4406LSS-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER