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Diodes Incorporated DMG4413LSS-13

Part No.:
DMG4413LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMG4413LSS-13.pdf
Description:
MOSFET P-CH 30V 10.5A 8SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,307

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Product details

Overview

DMG4413LSS from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SO-8 package, rated for -12A continuous drain current at VGS = -10V, with RDS(ON) as low as 7.5 mΩ. It delivers fast switching speed and low input capacitance (Ciss = 4965 pF), making it suitable for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMG4413LSS datasheet, DMG4413LSS pinout, DMG4413LSS application, or DMG4413LSS equivalent, key selection criteria include gate threshold voltage (-1.1 to -2.1 V), body diode forward voltage (-0.7 to -1.0 V), thermal resistance (RθJA = 56 °C/W with enhanced pad layout), AEC-Q101 qualification, and SO-8 lead-free packaging compliance.

Technical Context

This P-channel MOSFET operates in enhancement mode with negative gate control logic, enabling high-side switching without level-shifting circuitry. Its low RDS(ON) at -4.5V gate drive (10.2 mΩ) supports efficient operation in 5V/3.3V logic-controlled power rails.

The device integrates a robust body diode (IS = -4A continuous) and exhibits controlled dynamic characteristics: QG = 46 nC, tD(OFF) = 160 ns, and Crss = 711 pF - balancing switching loss and EMI performance in synchronous buck and load-switch topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-30 V - Maximum blocking voltage for 24V rail and automotive 12V systems with margin
RDS(ON) @ VGS = -10V7.5 mΩ - Enables <150 mW conduction loss at 10A, critical for thermally constrained PCBs
RDS(ON) @ VGS = -4.5V10.2 mΩ - Supports direct interface with 3.3V/5V microcontroller GPIO without gate driver
ID (continuous, TA = +25°C)-12 A - Sustains full-load current in compact DC-DC output stages with minimal derating
Ciss4965 pF - Low enough to minimize gate drive power while maintaining stable turn-on under 1MHz PWM
QG46 nC - Dictates gate driver strength requirement; compatible with standard logic-level drivers
RθJA (enhanced layout)56 °C/W - Allows ~30°C rise at 1.4W dissipation, enabling 1.7W steady-state operation on 1-inch² copper

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small outline integrated circuit), JEDEC MS-012AC compliant, with matte tin annealed terminals over copper lead frame. Moisture sensitivity level 1 per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Internally paralleled pins provide low-inductance, high-current return path for load current
5, 6, 7, 8Drain (D)Internally paralleled pins serve as main power output node; connected to heatsink-capable copper pour
Gate (G)Control inputPin 3 is not used for source - actual gate is Pin 8 (per top-view marking diagram and SO-8 standard); confirmed via Diodes DS31754 Rev. 7-3 Figure "Top View Pin-out" showing G at Pin 8

Key Features

FeatureDesign Value
Low RDS(ON) at -4.5V10.2 mΩ enables direct 3.3V/5V MCU control in load switches and OR-ing circuits
Fast switching with low QGD/QG ratioQGD = 16 nC / QG = 46 nC = 0.35 - reduces Miller-induced shoot-through risk in synchronous rectifiers
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and UHAST
Halogen- and antimony-free "Green" construction<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global environmental compliance mandates without performance trade-off
Body diode with low VSDVSD = -0.7 V at -2.7A - minimizes reverse-conduction loss in buck converter freewheeling phase

Applications

LED Backlight Power SwitchUSB-C Load Switch

Use Scenario: Driving 12–24V LED strings in automotive instrument clusters and industrial HMIs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling LED cathode current path with PWM dimming.

Use Value: Low RDS(ON) limits thermal rise under continuous 10A peak loads; SO-8 footprint allows dense layout near display connectors.

Use Scenario: Enabling/disabling VBUS power delivery in portable USB-C host devices.

IC Role / Device Role / Timing Role: Controlled power path switch with fast turn-off (<200 ns) to prevent fault propagation during overcurrent events.

Use Value: Gate threshold of -1.6 V typical ensures clean logic-level activation from 3.3V PMIC outputs; low Ciss avoids signal integrity issues on high-speed CC lines.

DC-DC Synchronous RectifierAutomotive Body Control Module

Use Scenario: Secondary-side rectification in isolated 12V-to-5V flyback converters for infotainment supplies.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel MOSFET replacing Schottky diode to reduce conduction loss.

Use Value: Body diode VSD ≤ -0.7 V and fast tF = 66 ns ensure low reverse-recovery energy and minimal cross-conduction during dead-time transitions.

Use Scenario: Controlling solenoid valves and relays in 12V vehicle chassis systems.

IC Role / Device Role / Timing Role: AEC-Q101-qualified high-side driver managing inductive loads up to 10A with integrated clamping.

Use Value: RθJA = 56 °C/W and TJ(max) = +150°C support sustained operation in under-hood ambient up to +105°C without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMP3007LSSRDS(ON) = 5.5 mΩ @ -10V, but higher QG = 62 nC and larger Ciss = 6100 pFBetter conduction efficiency at high VGS, but slower switching and higher gate drive demandPrefer when minimizing I²R loss dominates over switching frequency or EMI constraints
SI2301DDS-T1-BE3SO-3 package, lower ID = -2.7A, RDS(ON) = 115 mΩ @ -4.5V - not a drop-in replacementLimited to low-power logic-level switching; unsuitable for >3A loadsOnly consider for space-constrained, sub-1W applications where SO-8 footprint is unavailable

Compared with DMP3007LSS and SI2301DDS-T1-BE3, DMG4413LSS offers optimal balance of low gate charge (46 nC), moderate RDS(ON) (10.2 mΩ @ -4.5V), and SO-8 thermal capability - making it uniquely suited for mid-power 3.3V/5V-controlled DC-DC and load-switch designs requiring AEC-Q101 compliance.

Availability

DMG4413LSS is available at Aetrix Electronics and suitable for LED backlighting, USB-C load switching, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for DMG4413LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMG4413LSS belongs to Diodes' high-reliability power MOSFET product line, engineered specifically for automotive and industrial power management where AEC-Q101 qualification, low RDS(ON), and robust thermal performance are mandatory.

FAQ

What is the maximum safe operating junction temperature for DMG4413LSS?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation at this limit requires strict thermal design: use of 1-inch² copper pour, minimized RθJA (56 °C/W), and ambient temperature ≤ +70°C. Derating is required above TA = +70°C per the ID vs. TA curves on page 2 of DS31754.

Does DMG4413LSS require a gate resistor for reliable switching?

Yes - a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by Lg–Ciss resonance and control dV/dt during turn-on. The device's QG = 46 nC and low Crss = 711 pF make it sensitive to parasitic oscillation without proper gate impedance matching to the driver output impedance.

Can DMG4413LSS be used in linear (analog) regulation mode?

No - it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve on page 4 shows only pulsed and DC boundaries up to 10s, with no linear region defined. Continuous operation in the ohmic region risks thermal runaway due to positive temperature coefficient of RDS(ON) and insufficient SOA margin.

Is the SO-8 package of DMG4413LSS compatible with standard reflow profiles?

Yes - its moisture sensitivity level is Grade 1 per J-STD-020, meaning it can be stored indefinitely at ≤30°C/60% RH and processed using standard Pb-free reflow profiles (peak 260°C, 60s max above 217°C). The matte tin annealed finish ensures solderability per MIL-STD-202, Method 208 without pre-baking.

DMG4413LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4965 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMG4413LSS-13 FAQ

1.How can I place an order for DMG4413LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4413LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4413LSS-13 reliable?

The price and inventory of DMG4413LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4413LSS-13 is usually 5 days.

3.What payment methods are accepted for DMG4413LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4413LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4413LSS-13?

DMG4413LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4413LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4413LSS-13?

For technical support, including DMG4413LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4413LSS-13 requirements.

6.How does Aetrix verify that DMG4413LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMG4413LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4413LSS-13 meets industry standards.

7.What is the process for return or replacement of DMG4413LSS-13?

All DMG4413LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4413LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4413LSS-13 part is unused and in its original packaging.

Return procedure for DMG4413LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG4413LSS-13 Tags

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