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Diodes Incorporated DMG4466SSSL-13

Part No.:
DMG4466SSSL-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMG4466SSSL-13.pdf
Description:
MOSFET N-CH 30V 10A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

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Product details

Overview

DMG4466SSSL-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V VDS, 23 mΩ RDS(ON) @ 10 VGS, and 10 A continuous drain current at 25°C. It delivers low conduction loss and fast switching (tD(on) = 2.9 ns, tD(off) = 14.6 ns) for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMG4466SSSL-13 datasheet, DMG4466SSSL-13 pinout, DMG4466SSSL-13 application, or DMG4466SSSL-13 equivalent, key selection criteria include verified RDS(ON) at 4.5 VGS (33 mΩ), AEC-Q101 qualification, SO-8 thermal resistance (RθJA = 88.4°C/W), and gate charge (Qg = 10.5 nC @ 10 VGS) for synchronous buck control.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low RDS(ON) while maintaining robust switching performance. Its gate threshold voltage (VGS(th) = 1.0–2.4 V) enables reliable turn-on with standard logic-level drivers, and its low input capacitance (Ciss = 478.9 pF) reduces drive power requirements.

The device integrates a body diode with VSD = 0.69 V @ 1 A and supports repetitive avalanche energy (EAR = 12.8 mJ), enabling operation in inductive switching circuits without external snubbers. Thermal design is supported by a 0.074 g mass and JEDEC-standard SO-8 pad layout recommendations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 24 V rail and automotive 12 V systems
RDS(ON)23 mΩ @ 10 VGS - Enables ≤230 mW conduction loss at 10 A
ID (continuous)10 A @ 25°C - Supports high-current synchronous rectification in compact layouts
Qg10.5 nC @ 10 VGS - Determines gate driver current requirement for <100 ns switching transitions
Ciss478.9 pF - Sets Miller effect magnitude and impacts EMI filtering needs
tD(off)14.6 ns - Critical for minimizing dead-time losses in half-bridge topologies
RθJA88.4°C/W - Defines maximum power dissipation (1.42 W) on FR-4 with 2 oz copper

Pinout & Package

SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance; compliant with JEDEC MS-012 (SOIC-8) outline and J-STD-020 moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal requiring ≤10.5 nC charge to switch 10 A load
2 (S)SourceReference node for gate drive; tied to power ground in low-side configuration
3 (D)DrainMain current path; internally paralleled across pins 4, 5, 7, 8 for low-inductance high-current routing
4 (D)DrainShared drain connection enhancing current handling and thermal spreading
5 (D)DrainPart of multi-pin drain structure reducing package inductance below 1 nH
6 (G)GateSecond gate pin for improved gate loop inductance control in high-frequency designs
7 (D)DrainDrain tie point supporting >8 A pulsed current (IDM = 60 A)
8 (D)DrainFinal drain connection completing low-resistance path to PCB thermal pad

Key Features

FeatureDesign Value
Low RDS(ON) at 4.5 VGS33 mΩ - Enables direct interface with 3.3 V/5 V microcontrollers without level-shifting
Fast switching speedtD(off) = 14.6 ns - Reduces transition losses in >500 kHz DC-DC converters
AEC-Q101 qualifiedQualified for automotive power management - meets stress testing for temperature cycling, HTRB, and UHAST
Green packagingHalogen- and antimony-free, RoHS-compliant molding compound - satisfies IEC 61249-2-21 and JEDEC J-STD-020
Low gate resistanceRg = 0.4–1.6 Ω - Minimizes gate oscillation risk and simplifies RC damping design

Applications

LED Backlight DriverSynchronous Buck Converter

Use Scenario: Driving white LED strings in automotive instrument clusters with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling current through LED string; operates in hard-switched mode with 100 ns dead time.

Use Value: 23 mΩ RDS(ON) limits conduction loss to <230 mW at 10 A, enabling thermally constrained PCB layouts.

Use Scenario: High-efficiency 12 V-to-3.3 V step-down converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; commutates at 600 kHz with gate drive from controller's BOOT pin.

Use Value: 33 mΩ RDS(ON) @ 4.5 VGS cuts rectifier loss by 65% vs. 400 mV Schottky, improving full-load efficiency to >94%.

Automotive Body Control ModuleUSB-C Power Delivery Switch

Use Scenario: Load switching for interior lighting and window motor drivers in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN/LIN microcontroller GPIO with integrated current sense feedback.

Use Value: AEC-Q101 qualification ensures reliability over -40°C to +125°C ambient, with 16 A avalanche rating protecting against inductive kickback.

Use Scenario: 20 V-rated USB-C PD 3.0 power path switch enabling 5–20 V bidirectional sourcing/sinking.

IC Role / Device Role / Timing Role: Bidirectional power FET managing VBUS routing between source and sink ports with reverse conduction capability.

Use Value: Body diode VSD = 0.69 V @ 1 A enables efficient reverse current flow during sink mode, reducing need for external diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3026LSD-13RDS(ON) = 26 mΩ @ 10 VGS; higher Ciss (540 pF); same SO-8 packageMarginally higher conduction loss but identical footprint for drop-in replacement in space-constrained boardsSelect when board layout reuse is prioritized over minimal RDS(ON) improvement
SI2306DS-T1-GE3RDS(ON) = 28 mΩ @ 10 VGS; lower ID (6.2 A); SOT-23 packageNot pin-compatible; suitable only for lower-current (<6 A), space-limited applications where SO-8 is prohibitiveChoose for cost-sensitive, low-power designs where thermal budget allows smaller package

Compared with DMN3026LSD-13 and SI2306DS-T1-GE3, DMG4466SSSL-13 offers the lowest RDS(ON) and highest continuous current in SO-8, making it optimal for thermally demanding 8–10 A power stages where layout compatibility and AEC-Q101 compliance are required.

Availability

DMG4466SSSL-13 is available at Aetrix Electronics and suitable for automotive body control modules, LED backlight drivers, and industrial DC-DC converters requiring stable component supply, AEC-Q101 qualification, and SO-8 thermal performance.

Supply support for DMG4466SSSL-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMG4466SSSL-13 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial applications where low RDS(ON), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The DMG4466SSSL-13 has a specified operating junction temperature range of –55°C to +150°C. For continuous operation under rated current, thermal design must ensure TJ remains ≤150°C, typically requiring heatsinking or airflow when dissipating >0.5 W in ambient >70°C environments.

Is this MOSFET suitable for synchronous rectification in a 48 V input buck converter?

No - the 30 V VDS rating makes DMG4466SSSL-13 unsuitable for 48 V bus applications. It is designed for ≤30 V systems such as 12 V automotive, 24 V industrial, or 5/3.3 V point-of-load converters where VDS stress remains within 80% of rating.

Does the SO-8 package include an exposed thermal pad?

Yes - the SO-8 package features an exposed drain paddle (pins 3, 4, 5, 7, 8) that must be soldered to a PCB thermal pad per AP02001 recommended layout. This pad is electrically connected to drain and improves RθJA by up to 30% versus non-thermal SO-8 variants.

Can this MOSFET replace a P-channel device in high-side switching?

No - DMG4466SSSL-13 is an N-channel MOSFET requiring gate voltage ≥ VDS for full enhancement. High-side switching would necessitate a bootstrap or charge-pump gate driver, whereas a P-channel device enables simpler direct GPIO control with logic-low turn-on.

DMG4466SSSL-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
478.9 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.42W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMG4466SSSL-13 FAQ

1.How can I place an order for DMG4466SSSL-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4466SSSL-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4466SSSL-13 reliable?

The price and inventory of DMG4466SSSL-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4466SSSL-13 is usually 5 days.

3.What payment methods are accepted for DMG4466SSSL-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4466SSSL-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4466SSSL-13?

DMG4466SSSL-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4466SSSL-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4466SSSL-13?

For technical support, including DMG4466SSSL-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4466SSSL-13 requirements.

6.How does Aetrix verify that DMG4466SSSL-13 is sourced from the original manufacturer or authorized distributors?

All DMG4466SSSL-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4466SSSL-13 meets industry standards.

7.What is the process for return or replacement of DMG4466SSSL-13?

All DMG4466SSSL-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4466SSSL-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4466SSSL-13 part is unused and in its original packaging.

Return procedure for DMG4466SSSL-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG4466SSSL-13 Tags

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