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Diodes Incorporated DMG4468LFG-7
- Part No.:
- DMG4468LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerUDFN
- Datasheet:
-
DMG4468LFG-7.pdf
- Description:
- MOSFET N-CH 30V 7.62A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,865
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Product details
Overview
DMG4468LFG-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a DFN3030-8 package, rated for 30 V VDSS, 7.62 A continuous drain current at 25°C, and 10 mΩ typical RDS(on) at VGS = 10 V. It delivers fast switching (tD(on) = 5.46 ns), low input capacitance (Ciss = 867 pF), and AEC-Q101 qualification for automotive power management circuits.
For engineers reviewing the DMG4468LFG-7 datasheet, DMG4468LFG-7 pinout, DMG4468LFG-7 application, or DMG4468LFG-7 equivalent, key selection criteria include its 4.5 V gate drive compatibility, 150°C max junction temperature, thermal resistance (RθJA = 126.7°C/W), and DFN3030-8 footprint suitability for space-constrained DC-DC converters and motor drivers.
Technical Context
This MOSFET operates as a low-side switch with a 1.0–2.0 V gate threshold voltage, enabling reliable turn-on with standard logic-level drivers. Its internal structure integrates a body diode with 0.7 V typical forward voltage at 1 A, supporting synchronous rectification and flyback recovery.
The device uses a planar silicon process optimized for low RDS(on) × Qg figure-of-merit (10 mΩ × 18.85 nC), balancing conduction and switching losses in high-frequency (<1 MHz) power stages. Thermal performance is validated on FR-4 PCBs with minimum recommended pad layout per JEDEC standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche; suitable for 24 V nominal systems with transient margin. |
| RDS(on) @ VGS = 10 V | 10 mΩ typ - Enables <1 W conduction loss at 10 A, reducing heatsink requirements in compact designs. |
| RDS(on) @ VGS = 4.5 V | 15 mΩ max - Ensures robust operation with 3.3 V or 5 V microcontroller GPIO drive without level-shifting. |
| Ciss | 867 pF - Low input capacitance minimizes gate drive power and improves switching speed stability. |
| tD(on) + tr | 19.99 ns total - Supports >10 MHz PWM in Class-D audio or high-efficiency buck converters. |
| TJ max | +150°C - Enables operation in under-hood automotive environments without derating at full current. |
| Qg | 18.85 nC - Predictable gate charge simplifies driver sizing and reduces EMI during edge transitions. |
Pinout & Package
Package: DFN3030-8 (3.0 mm × 3.0 mm × 0.6 mm), exposed thermal pad, RoHS-compliant "Green" molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| 5, 6 | Gate (G) | Dual gate pads lower effective gate resistance (Rg = 1.39 Ω), improving Miller immunity and turn-off control. |
| 7, 8 | Drain (D) | Two drain terminals connected to exposed thermal pad; primary path for heat dissipation to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power modules including engine control units and ADAS camera power rails. |
| Low RDS(on) × Qg | 188.5 mΩ·nC - Optimized trade-off for high-frequency switching efficiency in portable and automotive SMPS. |
| DFN3030-8 thermal pad | 0.0172 g mass with 126.7°C/W RθJA - Enables >0.99 W dissipation on 1-in² 2-oz copper with minimal thermal vias. |
| 100% lead-free / RoHS | No purposefully added lead; compliant with EU Directive 2011/65/EU and JESD204B reflow profiles. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: High-side load switching for LED headlamp dimming and door lock actuators in 12 V vehicle architectures. IC Role / Device Role / Timing Role: N-channel MOSFET used in high-side configuration with integrated charge pump driver; handles 5–7 A pulsed loads. Use Value: 15 mΩ RDS(on) at 4.5 V ensures <0.5 W loss at 7 A, eliminating need for external heat sinks in sealed modules. | Use Scenario: Input power path control in USB-C PD sink devices requiring reverse-current blocking and hot-plug robustness. IC Role / Device Role / Timing Role: Low-side OR-ing switch managing dual-input (adapter/battery) power routing with fast fault response. Use Value: 18.85 nC Qg enables <1 μs turn-off, preventing backfeed during adapter insertion/removal events. |
| Industrial PLC I/O Driver | Wireless Charging Transmitter |
Use Scenario: Solid-state relay replacement for 24 V DC output modules driving solenoids and indicator lamps. IC Role / Device Role / Timing Role: Low-side switching element controlled by isolated digital I/O; supports 100 kHz PWM modulation. Use Value: 867 pF Ciss and 5.46 ns tD(on) ensure clean edge integrity across long PCB traces in noisy factory environments. | Use Scenario: Half-bridge synchronous rectifier in 15 W Qi-compliant wireless charging transmitters operating at 110–205 kHz. IC Role / Device Role / Timing Role: Secondary-side synchronous FET replacing Schottky diode to reduce conduction loss in resonant tank rectification. Use Value: 0.7 V VSD body diode drop and 10 mΩ RDS(on) increase end-to-end efficiency by ≥3.2% versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LFG-7 | Higher RDS(on) (28 mΩ @ 4.5 V), same DFN3030-8 package, identical AEC-Q101 rating. | Better suited for cost-sensitive 12 V systems where peak current ≤3 A; less efficient above 5 A. | Select when thermal budget allows higher conduction loss and gate drive voltage is guaranteed ≥4.5 V. |
| Si2302DDS-T1-GE3 | Lower VDSS (20 V), smaller SOT-23 package, no AEC-Q101 qualification, RDS(on) = 48 mΩ @ 4.5 V. | Targeted at consumer-grade 5 V/3.3 V logic-level switching only; unsuitable for automotive or industrial ambient temperatures. | Choose only for non-automotive, low-power (<1 A) applications where board space is more critical than reliability certification. |
Compared with DMN3028LFG-7 and Si2302DDS-T1-GE3, the DMG4468LFG-7 uniquely combines 30 V rating, AEC-Q101 compliance, and sub-15 mΩ RDS(on) at 4.5 V-making it the only option qualified for thermally demanding, safety-critical 24 V automotive loads.
Availability
DMG4468LFG-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, industrial PLC outputs, and wireless charging transmitters requiring stable component supply and long-term lifecycle support.
Supply support for DMG4468LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMG4468LFG-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems requiring low RDS(on), fast switching, and extended temperature operation.
FAQ
What is the maximum continuous drain current at 100°C ambient temperature?
At TA = 100°C, the DMG4468LFG-7's continuous drain current is derated to approximately 3.2 A based on its 126.7°C/W RθJA and 150°C TJ(max). This assumes mounting on FR-4 with minimum recommended pad layout per datasheet Figure 5. No additional heatsinking is applied.
Does the DFN3030-8 package require solder paste stencil aperture adjustments for thermal pad reliability?
Yes. The exposed thermal pad requires a 70–80% area coverage stencil aperture with 4–6 evenly distributed 0.3 mm diameter thermal vias filled with solder or conductive epoxy. This prevents voiding and ensures RθJA remains within 126.7°C/W specification per JEDEC J-STD-020 Level 1 moisture sensitivity.
Can DMG4468LFG-7 be used in a high-side configuration without a dedicated gate driver?
No. As an N-channel MOSFET, it requires gate voltage ≥ VDS + VGS(th) for full enhancement. In high-side use, a bootstrap or charge-pump gate driver (e.g., Diodes Inc. AP21xx series) is mandatory to achieve >30 V gate-source potential relative to the switched rail.
Is the body diode optimized for reverse recovery in synchronous rectification?
No. The intrinsic body diode has no specified reverse recovery time (trr) or Qrr in the datasheet. It is intended for freewheeling only-not hard-commutated synchronous rectification. For such applications, a dedicated Schottky or GaN FET with characterized Qrr is recommended.
DMG4468LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.62A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 11.6A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.85 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 867 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 990mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN3030-8
DMG4468LFG-7 FAQ
1.How can I place an order for DMG4468LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG4468LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG4468LFG-7 reliable?
The price and inventory of DMG4468LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4468LFG-7 is usually 5 days.
3.What payment methods are accepted for DMG4468LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4468LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG4468LFG-7?
DMG4468LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG4468LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG4468LFG-7?
For technical support, including DMG4468LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4468LFG-7 requirements.
6.How does Aetrix verify that DMG4468LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMG4468LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4468LFG-7 meets industry standards.
7.What is the process for return or replacement of DMG4468LFG-7?
All DMG4468LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4468LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG4468LFG-7 part is unused and in its original packaging.
Return procedure for DMG4468LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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