Diodes Incorporated DMG4496SSSQ-13

Overview

DMG4496SSSQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V V(BR)DSS, 21.5mΩ RDS(ON) @ 10V VGS, and 8A ID max at TA = +85°C. It delivers low conduction loss and fast switching for automotive power management, including DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMG4496SSSQ-13 datasheet, DMG4496SSSQ-13 pinout, DMG4496SSSQ-13 application, or DMG4496SSSQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 4.5V gate drive compatibility, SO-8 thermal performance (RθJA = 88.49°C/W), and 10.2nC total gate charge at 10V - critical for high-frequency synchronous buck designs.

Technical Context

This MOSFET employs a planar trench-gate process optimized for low RDS(ON) while maintaining controlled Qg and Crss to balance switching loss and EMI. Its 0.7V typical body diode forward voltage supports efficient freewheeling in boost and flyback topologies.

The device operates across –55°C to +150°C junction temperature range with stable VGS(th) (0.8–2.0V) and exhibits <1μA IDSS at 30V, ensuring reliable off-state blocking in automotive 12V rail applications where leakage-induced sleep current must be minimized.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin small outline integrated circuit), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMG4496SSSQ-13, DMN3026LSD-13 trades slightly higher conduction loss for broader availability, while IPD220N03L3ATMA1 offers superior RDS(ON) at the expense of layout space and gate drive complexity - making DMG4496SSSQ-13 the optimal balance for space-constrained automotive SO-8 applications requiring <30mΩ and <500pF.

Availability

DMG4496SSSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlighting systems, and body control module load switches requiring stable component supply with AEC-Q101 traceability and PPAP documentation support.

Supply support for DMG4496SSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability 12V vehicle subsystems where low RDS(ON), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for DMG4496SSSQ-13 at 105°C ambient?

At TA = +105°C, the device supports 4.2A continuous drain current, derived from its 6A rating at +85°C and thermal derating curve in DS32048 Figure 4. This assumes mounting on 1 in² FR-4 with 2oz copper in still air - actual current depends on PCB copper area and airflow.

Is DMG4496SSSQ-13 pin-compatible with standard SO-8 MOSFET footprints?

Yes - it uses industry-standard SO-8 outline per AP02002 (0.15mm pitch, 4.9mm × 6.0mm body), with identical pad layout to JEDEC MS-012. Pin 1 is Gate, Pins 2–4 are Source, and Pins 5–8 are Drain - matching common dual-source/dual-drain SO-8 MOSFET layouts.

Does this MOSFET include an integrated body diode, and what is its forward voltage?

Yes - it features a monolithic parasitic body diode with typical VSD = 0.70V at IS = 1A and TJ = +25°C (max 1.0V). This enables synchronous rectification in flyback and buck-boost topologies, though external Schottky diodes may be preferred for ultra-low VF requirements.

How does the AEC-Q101 qualification impact reliability testing for DMG4496SSSQ-13?

AEC-Q101 qualification subjects DMG4496SSSQ-13 to accelerated stress tests including 1000-hour HTOL at 150°C, 1000-cycle temperature cycling (–55°C to +150°C), and unbiased HAST (96h, 130°C, 85% RH), ensuring <100ppm early-life failure rate in automotive applications per IATF 16949 requirements.