Diodes Incorporated DMG4511SK4-13

Overview

DMG4511SK4-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TO252-4L package, integrating an N-channel (35V, 35mΩ @ 10V) and P-channel (−35V, 45mΩ @ −10V) device for synchronous switching. It delivers 13A/−12A continuous drain current capability at +25°C with low gate threshold voltage (1.0–3.0V / −1.0–−3.0V), enabling efficient operation in compact DC-DC converters and backlighting circuits.

For engineers reviewing the DMG4511SK4-13 datasheet, DMG4511SK4-13 pinout, DMG4511SK4-13 application, or DMG4511SK4-13 equivalent, key selection criteria include verified R_DS(on) matching between channels, thermal resistance (R_θJA = 30.8°C/W with 2oz copper), AEC-Q101 qualification, and TO252-4L footprint compatibility for dual-channel power stage layout.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing a common source configuration in a monolithic TO252-4L thermally enhanced package. The N-channel device exhibits 25–50mΩ R_DS(on) at V_GS = 10V/ID = 8A, while the P-channel delivers 30–65mΩ at V_GS = −10V/ID = −6A - enabling matched conduction loss in half-bridge or H-bridge topologies.

Gate drive characteristics are optimized for 4.5V logic-level compatibility: V_GS(th) ranges 1.0–3.0V (N) and −1.0–−3.0V (P), with total gate charge of 18.7nC (N) and 19.2nC (P) at rated V_GS, supporting fast switching with controlled dV/dt and low EMI in high-frequency power management.

Key Specifications

Pinout & Package

Package: TO252-4L (DPAK-4), thermally enhanced surface-mount package with exposed drain pad for low R_θJA; 0.6mm profile enables ultra-thin designs; 4mm² PCB footprint minimizes board space.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, DMG4511SK4-13 uniquely balances AEC-Q101 compliance, 13A/−12A current handling, and TO252-4L thermal performance - making it optimal for automotive and industrial power stages where reliability and thermal headroom are prioritized over minimal footprint.

Availability

DMG4511SK4-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and automotive power management functions requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMG4511SK4-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMG4511SK4 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for synchronous rectification, motor control, and high-efficiency DC-DC conversion in thermally constrained environments.

FAQ

What is the maximum safe operating temperature for DMG4511SK4-13?

The device is rated for junction temperatures from −55°C to +150°C. With its R_θJA of 30.8°C/W on 2oz copper, sustained operation at 125°C ambient requires ≤1.6W power dissipation. Derating curves in Figure 5 and Figure 15 confirm stable R_DS(on) up to +150°C, supporting under-hood automotive use.

Can DMG4511SK4-13 be used in a synchronous buck converter without external gate drivers?

No - the device requires external gate drivers due to its 18.7nC/19.2nC total gate charge and ±20V V_GS rating. Direct MCU GPIO drive is insufficient; a dedicated dual-channel driver like the ZXGD3101 is recommended to achieve <10ns propagation delay and prevent shoot-through during 500kHz+ switching.

Does the TO252-4L package require special PCB layout considerations?

Yes - the exposed drain pad (Pin 1) must be connected to a minimum 1-inch square 2oz copper thermal pad with ≥4 thermal vias (0.3mm diameter) to inner ground planes. Per AP02001, the recommended pad layout uses 5.33mm × 6.58mm solder mask opening to ensure mechanical stability and thermal transfer per J-STD-020 Level 1 moisture sensitivity.

How does the complementary pair configuration affect dead-time requirements?

The matched V_GS(th) (±1.0–3.0V) and gate charge values reduce timing asymmetry, allowing dead-time reduction to 20–30ns without shoot-through risk. However, the 33.2ns t_D(off) (N) and 45.8ns t_D(off) (P) mismatch necessitates asymmetric dead-time programming - typically 40ns for high-side turn-off and 60ns for low-side turn-off in PWM controllers.