Diodes Incorporated DMG4710SSS-13

Overview

DMG4710SSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET monolithically integrated with a Schottky diode in a single SO-8 die, delivering 30 V V(BR)DSS, 12.5 mΩ RDS(on) @ 10 V VGS, and 11.7 A continuous drain current at 25°C - optimized for high-efficiency DC-DC converters and power management stages.

For engineers reviewing the DMG4710SSS-13 datasheet, DMG4710SSS-13 pinout, DMG4710SSS-13 application, or DMG4710SSS-13 equivalent, key selection criteria include its low Qrr (reducing body-diode switching losses), 0.38 V typical VSD (minimizing conduction loss during reverse recovery), and AEC-Q101 qualification for automotive-grade reliability in compact power stages.

Technical Context

This DIOFET device uses a patented monolithic integration process to co-locate the MOSFET channel and Schottky junction on one silicon die, eliminating parasitic inductance between discrete components and enabling faster switching transitions. Its low Crss (123 pF) and optimized Qg/Qgs ratio suppress shoot-through risk in synchronous buck topologies operating above 500 kHz.

The device features dual thermal performance ratings: 1.54 W PD with 81 °C/W RθJA on minimal FR-4 layout, and 2.8 W PD with 45 °C/W RθJA on enhanced 1"×1" copper layout - supporting flexible PCB-level thermal design across consumer and automotive applications.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount Small Outline, 8-pin), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Compared with DMN3025LSD-13 and SI7157DP-T1-GE3, the DMG4710SSS-13 uniquely balances low RDS(on), monolithic Schottky integration, and AEC-Q101 qualification - making it the only choice when automotive-grade reliability, layout compactness, and controlled reverse recovery are jointly required.

Availability

DMG4710SSS-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC buck converters, and USB-C power delivery sink circuits requiring stable component supply and long-term lifecycle support.

Supply support for DMG4710SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMG4710SSS-13 belongs to Diodes' DIOFET™ product line - engineered specifically for high-efficiency, space-constrained power conversion where monolithic integration of MOSFET and Schottky delivers measurable system-level advantages in EMI, thermal, and reliability performance.

FAQ

What is the maximum continuous drain current at 85°C ambient temperature with 4.5 V gate drive?

The DMG4710SSS-13 supports 7.8 A continuous drain current at TA = 85°C with VGS = 4.5 V, as specified in Note 5 of the datasheet. This rating assumes mounting on a 1" × 1" FR-4 PCB with high-coverage 1 oz. copper. Derating curves in Figure 5 confirm RDS(on) increases to ~1.4× nominal at 85°C, maintaining safe operation within thermal limits.

Does the integrated Schottky diode conduct during normal MOSFET turn-off in synchronous rectification?

Yes - during the dead-time interval when both high-side and low-side FETs are off, the integrated Schottky conducts the inductor current, providing a low-VF (0.38 V typ) freewheeling path. Unlike the parasitic body diode, this Schottky exhibits negligible reverse recovery charge (Qrr), eliminating associated switching losses and voltage ringing.

Can DMG4710SSS-13 be used in a high-side switch configuration with 12 V gate drive?

Yes - the device supports ±12 V gate-source voltage and is rated for 30 V drain-source breakdown. In high-side configuration, a gate driver capable of level-shifting (e.g., bootstrap or isolated) is required to maintain VGS ≥ 4.5 V during conduction. The low Qg (18.5 nC @ 4.5 V) enables fast switching even with moderate-drive drivers.

Is the SO-8 package thermally enhanced, and how is heat dissipated?

Yes - pins 5–8 form a common drain connection tied to an internal thermal pad, which must be soldered to a large copper pour on the PCB for effective heat transfer. With proper layout (1" × 1" 1 oz. copper), RθJA drops to 45 °C/W, allowing 2.8 W power dissipation - significantly higher than standard SO-8 devices without thermal pad optimization.