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Diodes Incorporated DMG4800LSD-13
- Part No.:
- DMG4800LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG4800LSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 7.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:10,855
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Product details
Overview
DMG4800LSD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 16mΩ RDS(ON) @ 10V VGS, and 9.8A continuous drain current at 25°C - designed for high-efficiency DC-DC converters and backlighting power stages.
For engineers reviewing the DMG4800LSD datasheet, DMG4800LSD pinout, DMG4800LSD application, or DMG4800LSD equivalent, key selection criteria include low gate charge (8.56nC), avalanche-rated ruggedness (17A IAR), thermal resistance (RθJA = 83°C/W), and dual-channel layout for synchronous buck or load-switch configurations.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source connection per channel (S1/G1/D1 and S2/G2/D2), enabling independent control of high-side and low-side switching paths in half-bridge topologies. Its 1.37Ω gate resistance and low Crss (122pF) support fast, low-noise switching with minimal shoot-through risk.
The device operates across –55°C to +150°C junction temperature, with 100% avalanche-rated capability and JEDEC-compliant reliability. It delivers stable RDS(ON) performance down to 4.5V gate drive, making it suitable for 5V and 3.3V logic-level control in compact power management ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports input rails up to 24V nominal systems with margin for transients |
| RDS(ON) @ 10V | 16mΩ max - enables <1.5W conduction loss at 9.8A, critical for thermally constrained PCBs |
| RDS(ON) @ 4.5V | 22mΩ max - ensures functional operation with standard 5V microcontroller GPIO drive |
| Qg | 8.56nC - reduces gate driver power demand and switching transition time in high-frequency (>500kHz) converters |
| IAR | 17A - withstands repetitive inductive energy spikes without failure in motor or solenoid drive circuits |
| RθJA | 83°C/W - defines thermal derating slope on standard FR-4 with 2oz copper; limits continuous ID to ~6A at 70°C ambient |
| Ciss | 798pF - determines gate drive strength requirement and impacts EMI filtering design in switching nodes |
Pinout & Package
Package: SO-8, surface-mount, lead-free, RoHS-compliant molded plastic housing with UL 94V-0 rating and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires 0.8–1.6V threshold voltage drive |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1 current; tied to power ground or floating node in high-side configuration |
| 3 (D1) | Drain of Channel 1 | High-current output node for Channel 1; connects to load or inductor in buck/boost stage |
| 4 (D2) | Drain of Channel 2 | High-current output node for Channel 2; enables dual-output or complementary switching |
| 5 (S2) | Source of Channel 2 | Return path for Channel 2 current; electrically isolated from S1 unless externally connected |
| 6 (G2) | Gate of Channel 2 | Independent control input for second N-MOSFET; identical threshold and drive requirements as G1 |
| 7, 8 (Power Pads) | Thermal & Current Return | Internally connected to S1/S2; must be soldered to large copper pour for thermal dissipation and low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg / Qgd ratio | 8.56nC total gate charge with only 2.5nC Miller charge - minimizes switching losses and improves noise immunity during dV/dt transitions |
| 100% avalanche rated | 17A repetitive avalanche current with 14mJ energy handling - eliminates need for external snubbers in inductive load switching |
| Matched dual-channel characteristics | Paired RDS(ON), VGS(TH), and Ciss across channels - simplifies timing alignment and current balancing in synchronous rectifiers |
| Green compound & matte tin finish | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); matte tin annealed terminals ensure reliable solder wetting and long-term intermetallic stability |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving parallel LED strings in LCD displays using PWM dimming at 1–20kHz. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as low-side PWM switch (Channel 1) and high-side current-sense shunt switch (Channel 2) for feedback loop control. Use Value: 22mΩ RDS(ON) @ 4.5V enables direct MCU GPIO drive while maintaining <0.2V dropout at 8A peak current, minimizing thermal rise in thin-film display assemblies. |
Use Scenario: 12V-to-3.3V point-of-load conversion in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Channel 1 serves as high-side main switch; Channel 2 as low-side synchronous rectifier - both controlled by external PWM controller. Use Value: Matched RDS(ON) and low Qgd reduce dead-time losses and improve efficiency above 92% at 5A load, meeting stringent thermal budgets in sealed enclosures. |
| USB-C Power Delivery Switch | Automotive Body Control Module Load Switch |
|
Use Scenario: Bidirectional 20V/3A power path switching in USB-C PD sink applications with overcurrent protection. IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switch to block reverse current and enable soft-start sequencing. Use Value: 30V VDSS and 17A avalanche rating tolerate 24V bus transients and inductive kickback during hot-plug events without clamping diodes. |
Use Scenario: Controlled 12V supply switching for HVAC actuators and door lock solenoids in BCM designs. IC Role / Device Role / Timing Role: Channel 1 drives solenoid coil; Channel 2 monitors coil current via integrated sense-FET topology using shared source sensing. Use Value: Avalanche ruggedness and –55°C to +150°C operation ensure reliable cold-cranking and under-hood thermal survival without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Lower RDS(ON) (12.5mΩ @ 10V) but higher Qg (12.5nC); same SO-8 package and 30V rating | Better conduction efficiency at high current, but increased gate drive loss above 1MHz switching | Select when thermal budget is dominated by I²R loss rather than switching loss |
| SI4942DY-T1-GE3 | Higher VDSS (40V), higher RDS(ON) (20mΩ @ 10V), and larger Qg (15.5nC); also SO-8 | Supports 36V automotive transients but sacrifices efficiency in 24V systems | Choose for 24V+ battery systems requiring AEC-Q101 qualification and wider voltage margin |
Compared with DMN3025LSD-13 and SI4942DY-T1-GE3, the DMG4800LSD offers optimal balance of low gate charge and mid-range RDS(ON), making it preferred for 500kHz–2MHz DC-DC converters where both switching and conduction losses must be minimized within tight thermal constraints.
Availability
DMG4800LSD is available at Aetrix Electronics and suitable for LED backlight drivers, synchronous buck converters, USB-C power delivery switches, and automotive body control module load switches requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMG4800LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMG4800LSD belongs to Diodes' high-performance power MOSFET product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and load switching applications demanding low RDS(ON), robust avalanche capability, and logic-level gate drive compatibility.
FAQ
What is the maximum continuous drain current for DMG4800LSD at 70°C ambient?
At TA = +70°C with VGS = 10V, the DMG4800LSD supports 6.0A steady-state continuous drain current per channel. This rating assumes mounting on an FR-4 PCB with 2oz copper and minimum recommended pad layout per datasheet Note 8. Derating follows RθJA = 83°C/W, limiting usable current in enclosed environments.
Does DMG4800LSD support 3.3V logic-level gate drive?
No - the gate threshold voltage range is 0.8V to 1.6V, but RDS(ON) is not specified below VGS = 4.5V. At 3.3V, the device may conduct weakly or inconsistently; full enhancement requires ≥4.5V. For true 3.3V-compatible operation, consider logic-level MOSFETs like DMN3025LSD-13 with guaranteed RDS(ON) at 2.5V.
How is the SO-8 thermal pad (pins 7–8) connected internally?
Pins 7 and 8 are internally connected to the source terminals (S1 and S2) and serve as primary thermal and current return paths. They must be soldered to a large copper pour for effective heat dissipation and low-inductance grounding. No isolation or separate biasing is required - they are not floating terminals.
Is DMG4800LSD qualified for automotive applications?
The standard DMG4800LSD is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMG4800LSDQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. These carry a "Q" suffix and are listed in Diodes' automotive product portal - the base part is intended for industrial and consumer power management.
DMG4800LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.56nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 798pF @ 10V
- Power - Max:
- 1.17W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG4800LSD-13 FAQ
1.How can I place an order for DMG4800LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG4800LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG4800LSD-13 reliable?
The price and inventory of DMG4800LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4800LSD-13 is usually 5 days.
3.What payment methods are accepted for DMG4800LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4800LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG4800LSD-13?
DMG4800LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG4800LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG4800LSD-13?
For technical support, including DMG4800LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4800LSD-13 requirements.
6.How does Aetrix verify that DMG4800LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMG4800LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4800LSD-13 meets industry standards.
7.What is the process for return or replacement of DMG4800LSD-13?
All DMG4800LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4800LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG4800LSD-13 part is unused and in its original packaging.
Return procedure for DMG4800LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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