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Diodes Incorporated DMG4800LSDQ-13
- Part No.:
- DMG4800LSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG4800LSDQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 7.5A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,900
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Product details
Overview
DMG4800LSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 16mΩ RDS(ON) @ 10VGS, and 9.8A continuous drain current at 25°C. It delivers low conduction and switching losses for high-efficiency power management in compact DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMG4800LSDQ-13 datasheet, DMG4800LSDQ-13 pinout, DMG4800LSDQ-13 application, or DMG4800LSDQ-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, 100% avalanche rating, SO-8 thermal performance (RθJA = 83°C/W), gate charge (Qg = 8.56nC), and AEC-Q–compatible qualification path.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SO-8 footprint, enabling synchronous rectification or half-bridge topologies without external pairing. Its 0.8–1.6V gate threshold ensures robust turn-on with standard 3.3V/5V logic-level drive, while low Crss (122pF) and Qgd (2.5nC) support fast, low-noise switching up to several MHz.
The device features integrated body diodes with 0.72–0.94V forward voltage and 2A continuous body diode current capability. Thermal design is supported by RθJC = 14.5°C/W and JEDEC-compliant SO-8 mounting on 2oz FR-4 with 1-inch² copper pad, delivering 1.5W steady-state power dissipation at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V rail systems with 20% margin against transients |
| RDS(ON) @ 10VGS | 16mΩ max - enables ≤150mW conduction loss at 9.8A, critical for thermally constrained PCBs |
| RDS(ON) @ 4.5VGS | 22mΩ max - ensures full enhancement with 3.3V microcontroller GPIOs |
| Qg | 8.56nC - reduces gate driver power demand and switching transition time |
| ID (continuous, 25°C) | 9.8A - sustains high-current loads in buck converter low-side switches |
| Avalanche energy EAR | 14mJ - withstands inductive kickback in motor drive or relay control without snubbers |
| RθJA (t < 10s) | 49°C/W - allows 1.5W pulsed operation with minimal temperature rise during transient load steps |
Pinout & Package
Package: SO-8, surface-mount, lead-free, RoHS- and halogen-free "Green" compound (UL 94V-0), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Logic-level input controlling first N-MOSFET; requires <2.5nC charge for 10ns switching |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to local ground or low-side return path |
| 3 (D1) | Drain of Channel 1 | High-current output node; electrically isolated from Channel 2's drain |
| 4 (D2) | Drain of Channel 2 | Independent high-current output; enables dual-switch configurations like dual-phase buck |
| 5 (S2) | Source of Channel 2 | Separate source terminal-allows floating or independently biased operation |
| 6 (G2) | Gate of Channel 2 | Second independent gate input; matched threshold and timing to G1 per datasheet characterization |
| 7, 8 (Power pads) | Thermal & electrical connection to exposed drain copper | Internally connected to D1/D2; must be soldered to PCB thermal pad for RθJA = 49°C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche rated | Guarantees survivability under unclamped inductive switching events up to 17A and 14mJ without derating |
| Low Qg/Qgd ratio | Qgd/Qg ≈ 29% minimizes Miller-induced shoot-through risk in bridge configurations |
| Matched dual-channel RDS(ON) | Both channels specified identically (16mΩ @ 10VGS)-enables balanced current sharing without external balancing resistors |
| JEDEC-qualified reliability | Qualified to AEC-Q200 stress test standards for automotive-grade supply chain traceability and long-term stability |
| Green molding compound | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) meets IEC 61249-2-21 and automotive OEM sustainability mandates |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving parallel strings of white LEDs in notebook displays using PWM dimming at 20kHz. IC Role / Device Role / Timing Role: Low-side synchronous switch replacing discrete diodes in boost converter output stage. Use Value: 16mΩ RDS(ON) cuts conduction loss by >40% vs. Schottky alternatives, extending battery life by 8–12 minutes per charge cycle. | Use Scenario: Bidirectional 5–20V power path control in portable chargers supporting USB PD 3.0 variable voltage. IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS routing between Type-C port and internal battery/buck-boost IC. Use Value: Matched channel parameters ensure symmetrical on-resistance during reverse current flow, maintaining ±1% voltage regulation across 3A load steps. |
| Industrial DC-DC Converter | Automotive Cabin Lighting Control |
Use Scenario: 12V-to-5V/3.3V point-of-load conversion in PLC I/O modules with space-constrained 2-layer PCBs. IC Role / Device Role / Timing Role: Dual N-channel MOSFET implementing synchronous rectification in buck topology with external controller. Use Value: SO-8 thermal pad and 49°C/W pulsed RθJA allow 1.5W dissipation without heatsink-reducing BOM count by eliminating thermal interface materials. | Use Scenario: Dimmable interior LED lighting in vehicles, driven by CAN-controlled PWM signals with EMI-sensitive analog sensors nearby. IC Role / Device Role / Timing Role: High-side switch for LED string control, leveraging body diode conduction during PWM off-time. Use Value: 0.72V VSD body diode drop and 100% avalanche rating prevent latch-up during load dump transients (ISO 7637-2 Pulse 5a), eliminating need for external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Higher RDS(ON) (29mΩ @ 10VGS), lower ID (6.5A), same SO-8 package | Optimized for cost-sensitive, lower-current applications where thermal headroom exceeds 1.2W | Select when peak current ≤6A and board area permits slightly higher conduction loss |
| Si7850DP-T1-GE3 | Lower RDS(ON) (11mΩ @ 10VGS), higher Qg (15.5nC), same 30V rating and SO-8 | Better efficiency at high current but demands stronger gate driver due to 82% higher Qg | Select when system prioritizes conduction loss over switching loss and gate driver can source ≥2A peak |
Compared with DMG4800LSDQ-13, DMN3029LSD-13 trades 81% higher RDS(ON) for lower cost, while Si7850DP-T1-GE3 improves conduction loss by 31% at the expense of 82% higher gate drive power-making DMG4800LSDQ-13 the optimal balance for mid-power DC-DC and lighting control where both thermal and drive constraints apply.
Availability
DMG4800LSDQ-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery switching, and industrial DC-DC converters requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant sourcing.
Supply support for DMG4800LSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMG4800LSDQ-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power management in consumer, industrial, and automotive-qualified systems-emphasizing low RDS(ON), fast switching, and ruggedness.
FAQ
What is the maximum safe operating junction temperature for DMG4800LSDQ-13?
The absolute maximum junction temperature is +150°C per the datasheet. Derating begins at +125°C ambient, where continuous power dissipation drops to 0.6W. For sustained 9.8A operation, PCB layout must include the recommended 1-inch² 2oz copper thermal pad to maintain TJ ≤125°C at 70°C ambient.
Can DMG4800LSDQ-13 be used in a synchronous buck converter as both high-side and low-side switch?
No-it contains two N-channel MOSFETs only, so it cannot function as a high-side switch without external level-shifting circuitry. It is optimized for low-side synchronous rectification or dual low-side configurations (e.g., dual-phase buck). A complementary P-channel or N-channel with bootstrap gate driver is required for true high-side use.
Is DMG4800LSDQ-13 qualified for automotive applications?
The base part is JEDEC-qualified and manufactured in IATF 16949 facilities, but it carries no AEC-Q101 suffix. Automotive-grade equivalents (e.g., DMG4800LSDQ-13Q) exist with full AEC-Q101 qualification, PPAP documentation, and extended temperature validation. Use the Q-suffix version for safety-critical or production automotive designs.
How does the body diode performance impact reverse-current operation in USB-C applications?
The body diode has VSD = 0.72V typical at 1A, enabling efficient reverse conduction during USB-C dead-time intervals. Its 2A continuous rating and 17A avalanche current support bidirectional 3A power delivery without external diodes, reducing component count and forward voltage drop versus discrete Schottky solutions.
DMG4800LSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.56nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 798pF @ 10V
- Power - Max:
- 1.17W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMG4800LSDQ-13 FAQ
1.How can I place an order for DMG4800LSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG4800LSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG4800LSDQ-13 reliable?
The price and inventory of DMG4800LSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4800LSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMG4800LSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4800LSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG4800LSDQ-13?
DMG4800LSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG4800LSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG4800LSDQ-13?
For technical support, including DMG4800LSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4800LSDQ-13 requirements.
6.How does Aetrix verify that DMG4800LSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMG4800LSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4800LSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMG4800LSDQ-13?
All DMG4800LSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4800LSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG4800LSDQ-13 part is unused and in its original packaging.
Return procedure for DMG4800LSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG4800LSDQ-13 Tags
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