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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMG4812SSS-13

Name: DMG4812SSS-13
Brand: Diodes Incorporated
SKU: DMG4812SSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG4812SSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMG4812SSS-13.pdf

Description:: MOSFET N-CH 30V 8A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,120

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Product details

Overview

DMG4812SSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET with monolithically integrated Schottky diode in SO-8 package, rated for 30 V V_DS, 15 mΩ R_DS(on) @ 10 V_GS, 10.7 A continuous drain current, and qualified to AEC-Q101 for automotive power management. It serves as a synchronous rectifier or high-side switch in DC-DC converters.

For engineers reviewing the DMG4812SSS-13 datasheet, DMG4812SSS-13 pinout, DMG4812SSS-13 application, or DMG4812SSS-13 equivalent, key selection criteria include its low 18.5 mΩ R_DS(on) @ 4.5 V_GS, 0.36 V Schottky forward voltage, 13 A avalanche current rating, and SO-8 thermal performance (R_θJA = 45 °C/W under 1"×1" FR-4).

Technical Context

This DIOFET integrates a MOSFET and Schottky diode on a single die using a patented process, eliminating body diode conduction losses and reducing Q_rr by replacing the parasitic PN junction with a low-V_SD Schottky. Its gate threshold voltage (1.0–2.3 V) enables 3.3 V/5 V logic-level drive compatibility.

The device delivers low dynamic losses via optimized gate charge profile: Q_g = 43 nC @ 10 V_GS, Q_gd/Q_g ratio < 10%, minimizing shoot-through risk in high-frequency synchronous buck topologies operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications
R_DS(on) @ 10 V_GS	15 mΩ - Conduction loss of 1.62 W at 10.7 A, enabling >95% efficiency in 12 V→5 V converters
R_DS(on) @ 4.5 V_GS	18.5 mΩ - Ensures full enhancement with 3.3 V microcontroller GPIO drive
V_SD	0.36 V - Schottky forward drop reduces reverse-recovery loss vs. standard MOSFET body diode
I_AR	13 A - Avalanche ruggedness supports inductive load switching without external snubbers
Q_g	43 nC - Gate charge optimized for fast turn-on while limiting EMI in 500 kHz–1 MHz SMPS
R_θJA	45 °C/W - Thermal resistance measured on 1"×1" 1 oz Cu PCB, enabling 2.8 W dissipation at +85°C ambient

Pinout & Package

Package: SO-8, surface-mount, green molding compound (UL 94V-0), moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for internal MOSFET and Schottky cathode; tied to power ground plane
5, 6, 7, 8	Drain	Parallel-drain configuration for low-inductance high-current path; connected to Schottky anode
3 (center)	Gate	Single gate terminal with 2.0 Ω typical gate resistance; compatible with standard gate drivers

Key Features

Feature	Design Value
Monolithic MOSFET + Schottky integration	Eliminates discrete diode placement, reduces board area by 30% and parasitic inductance in synchronous rectification
Low Q_rr Schottky	Reduces reverse-recovery energy loss by >80% versus standard MOSFET body diode in hard-switched converters
Avalanche-rated (I_AR/E_AR)	Withstands 13 A single-pulse avalanche current and 25.4 mJ repetitive energy without degradation
ESD protection	HBM rating >2 kV ensures robustness during PCB assembly and handling without additional protection circuitry
AEC-Q101 qualification	Validated for automotive under-hood temperature cycling (-55°C to +150°C) and mechanical shock testing

Applications

Automotive DC-DC Converters

Industrial Power Supplies

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in ADAS camera modules and infotainment head units.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side, replacing external Schottky diode.

Use Value: 0.36 V V_SD reduces conduction loss by 40% vs. 0.55 V discrete Schottky, improving thermal margin at 6 A load.

Use Scenario: 24 V to 12 V step-down supply for PLC I/O modules operating in industrial ambient (−40°C to +85°C).

IC Role / Device Role / Timing Role: High-side switch controlling 12 V auxiliary rail with fast turn-off (<5 ns fall time) to meet IEC 61000-4-4 immunity.

Use Value: 13 A I_AR rating enables safe operation during 24 V bus transients without clamping diodes.

Server VRMs

USB-C PD Adapters

Use Scenario: Multiphase buck converter in server CPU voltage regulator modules requiring <10 mΩ effective R_DS(on).

IC Role / Device Role / Timing Role: Low-R_DS(on) phase-leg switch with parallel-source layout minimizing current imbalance across phases.

Use Value: 15 mΩ @ 10 V_GS and 45 °C/W R_θJA enable 10.7 A per phase at 70°C case temperature.

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter with 94% efficiency target.

IC Role / Device Role / Timing Role: Self-driven rectifier controlled by transformer leakage voltage, leveraging low V_GS(th) (1.0–2.3 V) for reliable turn-on.

Use Value: 18.5 mΩ R_DS(on) @ 4.5 V_GS ensures full enhancement at typical self-drive peak voltage (~4.2 V), cutting conduction loss by 22% vs. 24 mΩ alternative.

Availability

DMG4812SSS-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial power supplies, server VRMs, and USB-C PD adapters requiring stable component supply and AEC-Q101 compliance.

Supply support for DMG4812SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

The DMG4812SSS belongs to Diodes' DIOFET product line, engineered specifically to replace discrete MOSFET + Schottky combinations in high-efficiency, space-constrained power conversion systems.

FAQ

What is the maximum continuous drain current at 85°C ambient?

At T_A = +85°C with t ≤ 10 sec and V_GS = 10 V, the DMG4812SSS-13 supports 8.6 A continuous drain current. This rating assumes mounting on a 1" × 1" FR-4 PCB with 1 oz copper; derating applies for smaller layouts or higher ambient temperatures.

Does this MOSFET require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by the 2.0 Ω typical gate resistance and PCB trace inductance. This prevents false triggering and ensures clean 6.6 ns turn-on delay and 4.7 ns turn-off fall time in high-frequency switching.

Can DMG4812SSS-13 be used in place of a standard MOSFET without Schottky integration?

No - the integrated Schottky anode connects to the drain terminals, making it unsuitable for high-side switch configurations where body diode reverse blocking is required. It is optimized exclusively for low-loss synchronous rectification and low-side switching with freewheeling paths.

Is lead-free and RoHS compliance verified for this part?

Yes - DMG4812SSS-13 is fully RoHS 3 compliant (2015/863/EU), halogen- and antimony-free ("Green"), with <900 ppm bromine/chlorine and <1000 ppm antimony. Lead-free status is confirmed per Diodes Incorporated's quality documentation and J-STD-020 moisture sensitivity level 1 certification.

DMG4812SSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 10.7A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1849 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 1.54W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMG4812SSS-13 FAQ

1.How can I place an order for DMG4812SSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4812SSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4812SSS-13 reliable?

The price and inventory of DMG4812SSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4812SSS-13 is usually 5 days.

3.What payment methods are accepted for DMG4812SSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4812SSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4812SSS-13?

DMG4812SSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4812SSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4812SSS-13?

For technical support, including DMG4812SSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4812SSS-13 requirements.

6.How does Aetrix verify that DMG4812SSS-13 is sourced from the original manufacturer or authorized distributors?

All DMG4812SSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4812SSS-13 meets industry standards.

7.What is the process for return or replacement of DMG4812SSS-13?

All DMG4812SSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4812SSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4812SSS-13 part is unused and in its original packaging.

Return procedure for DMG4812SSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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