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Diodes Incorporated DMG4822SSD-13
- Part No.:
- DMG4822SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG4822SSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,840
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Product details
Overview
DMG4822SSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 20 mΩ RDS(ON) @ VGS = 10V, and 10A continuous drain current at TA = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and power management switches.
For engineers reviewing the DMG4822SSD-13 datasheet, DMG4822SSD-13 pinout, DMG4822SSD-13 application, or DMG4822SSD-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, SO-8 thermal performance (RθJA = 88.4°C/W), gate charge (Qg = 10.5 nC @ 10V), and automotive-grade variant availability (DMG4822SSDQ).
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SO-8 package with independent source, drain, and gate terminals per channel. Its design emphasizes low RDS(ON) (13.4 mΩ typ @ 10V) and low input capacitance (Ciss = 478.9 pF) to minimize switching losses in synchronous buck stages.
The device supports gate drive voltages from 4.5V to 10V, with VGS(TH) tightly specified (1–3V), enabling reliable turn-on with standard logic-level controllers. Its 1.42W power dissipation rating and 150°C max junction temperature support operation in compact, thermally constrained power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12V/24V rail switching |
| RDS(ON) max | 20 mΩ @ VGS = 10V - Enables ≤200 mW conduction loss at 10A output current |
| ID continuous | 10 A @ TA = +25°C - Supports high-current load switching in compact PCB layouts |
| Qg | 10.5 nC @ VGS = 10V - Determines gate driver strength requirement for <15 ns turn-on delay |
| Ciss | 478.9 pF - Limits high-frequency gate drive current and EMI generation |
| RθJA | 88.4 °C/W - Defines thermal rise under FR-4 board conditions with minimum pad layout |
| VGS(TH) | 1–3 V - Ensures robust turn-on with 3.3V or 5V microcontroller GPIOs |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small outline integrated circuit), molded plastic body with NiPdAu-plated copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires <10.5 nC charge for full turn-on |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to ground or low-side return path |
| 3 (D1) | Drain of Channel 1 | High-side or low-side power path terminal; shares thermal pad with D2/S2 |
| 4 (D2) | Drain of Channel 2 | Second power switch terminal; electrically isolated but thermally coupled to D1 |
| 5 (S2) | Source of Channel 2 | Independent source for Channel 2; enables dual low-side or half-bridge configuration |
| 6 (G2) | Gate of Channel 2 | Separate gate input for second MOSFET; identical drive requirements as G1 |
| 7, 8 (Thermal Pad) | Exposed Drain Common | Internally connected to both D1 and D2; must be soldered to PCB copper pour for thermal relief |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual-channel RDS(ON) | 13.4 mΩ typ per channel @ 10V - Ensures balanced current sharing in parallel or synchronous configurations |
| Low gate charge asymmetry | Qgd/Qgs ratio = 1.6/1.8 nC - Reduces Miller-induced shoot-through risk in half-bridge topologies |
| Fast switching transitions | tr = 7.9 ns, tf = 3.1 ns - Supports >1 MHz PWM frequencies with minimal dead-time overhead |
| Enhanced thermal interface | Exposed drain pad (pins 7–8) - Lowers effective RθJA by up to 30% when properly soldered to 1-in² copper area |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IPC-1752A material declaration requirements |
Applications
| DC-DC Synchronous Buck Converter | USB Power Delivery Switch |
|---|---|
|
Use Scenario: High-efficiency 5V/3.3V point-of-load regulator in industrial PLC I/O modules. IC Role / Device Role: Dual low-side switch replacing discrete N-MOSFETs; one channel drives main power FET, the other controls auxiliary rail sequencing. Use Value: 20 mΩ RDS(ON) reduces conduction loss by 40% vs. legacy 30 mΩ parts, improving thermal margin at 8A load. |
Use Scenario: USB-C port power path control with overcurrent and reverse-voltage protection. IC Role / Device Role: Dual N-channel back-to-back switch enabling bidirectional 5V/20V power routing and isolation. Use Value: Matched threshold (1–3V) and low leakage (<1 μA IDSS) ensure clean enable/disable behavior across temperature range. |
| Motor Driver Half-Bridge | Hot-Swap Controller Load Switch |
|
Use Scenario: 24V brushed DC motor interface in battery-powered robotics platforms. IC Role / Device Role: Low-side driver pair in H-bridge topology; G1/S1/D1 and G2/S2/D2 form complementary legs. Use Value: Fast tf = 3.1 ns minimizes cross-conduction during direction reversal, reducing shoot-through energy dissipation. |
Use Scenario: Inrush-limited 12V supply enable for FPGA carrier boards with multiple voltage rails. IC Role / Device Role: Dual independent load switches controlling separate 12V and 5V distribution paths. Use Value: Independent gate control allows staggered ramp-up, limiting peak inrush to <15A and avoiding system brownout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Higher RDS(ON) (29 mΩ @ 10V), lower Qg (7.2 nC), same SO-8 package | Better suited for low-power, high-frequency switching where gate drive loss dominates conduction loss | Select when operating below 3A average current and prioritizing driver efficiency over thermal headroom |
| SI6926ADQ-T1-GE3 | Lower RDS(ON) (12 mΩ @ 10V), higher Ciss (620 pF), same SO-8 footprint | Optimized for high-current, lower-frequency DC-DC stages where conduction loss is primary concern | Prefer when thermal budget is tight and switching frequency ≤500 kHz; verify gate driver slew rate compatibility |
Compared with DMG4822SSD-13, DMN3029LSD-13 trades conduction efficiency for reduced gate drive burden, while SI6926ADQ-T1-GE3 improves RDS(ON) at the cost of higher capacitive loading-making DMG4822SSD-13 the balanced choice for 1–10A, 300 kHz–1 MHz power stages.
Availability
DMG4822SSD-13 is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery systems, and motor driver half-bridges requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMG4822SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMG4822SSD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power conversion where dual-channel integration, thermal performance, and gate drive compatibility are critical.
FAQ
What is the maximum safe operating temperature for DMG4822SSD-13?
The DMG4822SSD-13 has a maximum junction temperature (TJ) of +150°C and an operating ambient range of −55°C to +150°C. Its thermal resistance (RθJA = 88.4°C/W) assumes use on FR-4 with minimum recommended pad layout; actual safe operating temperature depends on PCB copper area, airflow, and power dissipation. Derating is required above +85°C ambient.
Can DMG4822SSD-13 be used in a half-bridge configuration?
Yes-its dual N-channel structure supports half-bridge implementation when paired with external high-side gate drivers or bootstrap circuits. Pin 1 (G1) and pin 6 (G2) allow independent gate control; pins 3 (D1) and 4 (D2) serve as high-side and low-side drains respectively, with shared thermal pad enhancing thermal coupling between channels.
Is there an automotive-qualified version of this part?
Yes-the DMG4822SSDQ is the AEC-Q101 qualified variant, manufactured under automotive-specific process controls and tested to extended temperature (−40°C to +150°C) and reliability standards. It shares identical electrical specs and SO-8 packaging but carries distinct qualification documentation and traceability.
How does the exposed thermal pad (pins 7–8) connect internally?
Pins 7 and 8 are internally bonded to both drain terminals (D1 and D2); they are not isolated and must be soldered to a common PCB copper pour. This connection provides the primary thermal path from junction to board, contributing ~70% of total heat dissipation-omitting this connection raises RθJA by >40% and risks thermal runaway at >3W dissipation.
DMG4822SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 10A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 478.9pF @ 16V
- Power - Max:
- 1.42W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG4822SSD-13 FAQ
1.How can I place an order for DMG4822SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG4822SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG4822SSD-13 reliable?
The price and inventory of DMG4822SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4822SSD-13 is usually 5 days.
3.What payment methods are accepted for DMG4822SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4822SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG4822SSD-13?
DMG4822SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG4822SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG4822SSD-13?
For technical support, including DMG4822SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4822SSD-13 requirements.
6.How does Aetrix verify that DMG4822SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMG4822SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4822SSD-13 meets industry standards.
7.What is the process for return or replacement of DMG4822SSD-13?
All DMG4822SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4822SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG4822SSD-13 part is unused and in its original packaging.
Return procedure for DMG4822SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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