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Diodes Incorporated DMG4932LSD-13
- Part No.:
- DMG4932LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG4932LSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 9.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,343
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Product details
Overview
DMG4932LSD-13 from Diodes Incorporated is an asymmetrical dual N-channel enhancement-mode MOSFET in SO-8 package, integrating two discrete MOSFETs with integrated Schottky diodes per channel. It delivers 30 V VDSS, RDS(ON) of 10–12 mΩ (Q1 @ VGS = 10 V) and 12–16 mΩ (Q2 @ VGS = 10 V), and supports 9.5 A continuous drain current per channel - used in high-efficiency DC-DC synchronous buck converters and motor drive half-bridges.
For engineers reviewing the DMG4932LSD-13 datasheet, DMG4932LSD-13 pinout, DMG4932LSD-13 application, or DMG4932LSD-13 equivalent, key selection criteria include asymmetric gate threshold (VGS(TH) Q1: 1.0–2.4 V / Q2: 1.0–2.3 V), differential gate voltage ratings (±12 V for Q1, ±25 V for Q2), and integrated body-Schottky diode forward voltage (0.4–0.6 V for Q1, 0.65–1.0 V for Q2).
Technical Context
This dual MOSFET uses Diodes Incorporated's monolithic DIOFET technology to co-integrate each N-channel MOSFET with a low-VF Schottky barrier diode on the same die - enabling reduced reverse recovery loss and higher conversion efficiency in synchronous rectification. The asymmetry allows independent optimization: Q1 targets low RDS(ON) and fast switching (Ciss = 1932 pF), while Q2 provides higher gate voltage tolerance and lower gate charge (Qg = 16.0 nC @ 10 V).
Thermally rated for operation from −55 °C to +150 °C, it features 100% UIS and Rg tested units, AEC-Q101 qualification, and RoHS/lead-free/halogen-free compliance. Its SO-8 footprint supports standard FR-4 PCB layouts with RθJA = 107 °C/W (min pad) and 113 °C/W (transient).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for both channels; enables use in 24 V industrial bus and 12 V automotive systems. |
| RDS(ON) Q1 / Q2 | 10–12 mΩ / 12–16 mΩ @ VGS = 10 V - Low conduction loss per channel; critical for thermal management in high-current (>7 A) power stages. |
| ID Continuous | 9.5 A (Q1 & Q2, TA = 25 °C) - Supports compact, high-density power designs without forced air cooling. |
| VGS(TH) Range | 1.0–2.4 V (Q1), 1.0–2.3 V (Q2) - Enables reliable turn-on with 3.3 V or 5 V logic-level gate drivers. |
| Ciss / Coss | 1932 / 154 pF (Q1), 675 / 98 pF (Q2) - Asymmetric capacitance profile reduces switching loss imbalance in complementary drive topologies. |
| Qg @ 10 V | 42.0 nC (Q1), 16.0 nC (Q2) - Enables optimized gate drive sizing: Q1 for high-side low-loss, Q2 for low-side fast switching. |
| VSD (Schottky) | 0.4–0.6 V (Q1), 0.65–1.0 V (Q2) - Integrated Schottky diodes reduce reverse recovery time vs. standard body diodes. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9 mm × 6.0 mm × 1.75 mm height), molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Q1 | Controls first N-channel MOSFET; rated for ±12 V gate-source voltage. |
| 2 (S1) | Source of Q1 | Common source node for Q1; electrically isolated from Q2 source. |
| 3 (D1) | Drain of Q1 | High-side switch node; connects to input rail in buck topology. |
| 4 (S2/D1) | Shared terminal: Source of Q2 & Drain of Q1 | Internal connection enabling cascode or half-bridge configuration; requires careful layout isolation. |
| 5 (D2) | Drain of Q2 | Output node in half-bridge; ties to load or inductor output. |
| 6 (S2/D1) | Shared terminal: Source of Q2 & Drain of Q1 | Duplicate pin for thermal and current-handling robustness; must be connected to same net as Pin 4. |
| 7 (G2) | Gate of Q2 | Controls second N-channel MOSFET; rated for ±25 V gate-source voltage. |
| 8 (S2) | Source of Q2 | Low-side return path; typically tied to ground or power stage common. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical dual MOSFET architecture | Q1 optimized for low RDS(ON) and high-speed switching; Q2 designed for higher gate voltage margin and lower Qg - enables efficient half-bridge operation without external balancing. |
| Integrated Schottky barrier diodes | Each channel includes monolithically integrated Schottky diode (VSD ≤ 0.6 V for Q1, ≤ 1.0 V for Q2), eliminating external catch diodes and reducing reverse recovery loss. |
| Monolithic DIOFET process | Single-die integration ensures matched thermal behavior, precise parametric tracking between channels, and improved reliability vs. discrete dual-MOSFET solutions. |
| AEC-Q101 qualified | Validated for automotive-grade temperature cycling, humidity, and mechanical stress - suitable for under-hood infotainment power supplies and ADAS camera modules. |
| 100% UIS and Rg tested | Every unit undergoes unclamped inductive switching stress and gate resistance screening - guarantees ruggedness in real-world inductive load transients. |
Applications
| Automotive Camera Power Supply | Synchronous Buck Converter |
|---|---|
|
Use Scenario: 12 V to 3.3 V/5 V conversion for CMOS image sensors and ISP processors in rear-view and surround-view cameras. IC Role / Device Role / Timing Role: Dual MOSFET functions as synchronous rectifier pair - Q1 as high-side switch, Q2 as low-side switch with integrated Schottky for freewheeling. Use Value: Achieves >94% efficiency at 3 A load due to low RDS(ON) and Schottky-assisted zero-recovery switching, reducing thermal load in sealed camera housings. |
Use Scenario: Point-of-load (POL) regulator in industrial PLC I/O modules requiring stable 5 V/3.3 V rails from 24 V backplane. IC Role / Device Role / Timing Role: Asymmetrical dual FET implements high-efficiency buck stage - Q1 handles high-voltage stress, Q2 leverages low Qg for fast turn-off and minimal shoot-through risk. Use Value: Enables 500 kHz switching with <1.2 W total conduction + switching loss at 6 A, supporting compact 12 mm × 12 mm PCB area. |
| Brushless DC Motor Driver | USB-C Power Delivery Switch |
|
Use Scenario: Half-bridge leg in 24 V BLDC fan or pump driver for HVAC and server cooling systems. IC Role / Device Role / Timing Role: Q1 and Q2 form one leg of three-phase inverter - shared S2/D1 pin simplifies gate drive routing and minimizes loop inductance. Use Value: Asymmetric VGS rating (±25 V on Q2) withstands Miller-induced gate spikes during high-dV/dt commutation, improving system robustness. |
Use Scenario: Load switch in USB-C PD sink applications requiring bidirectional 5–20 V, up to 3 A power path control. IC Role / Device Role / Timing Role: Q1 and Q2 operate in parallel as back-to-back switches - leveraging integrated Schottky diodes to block reverse current without external components. Use Value: Eliminates need for external reverse-polarity protection diodes and reduces BOM count by 2 components while maintaining <40 mΩ total RON. |
Availability
DMG4932LSD-13 is available at Aetrix Electronics and suitable for automotive camera power supplies, industrial synchronous buck converters, brushless DC motor drivers, and USB-C power delivery switches requiring stable component supply and AEC-Q101-compliant performance.
Supply support for DMG4932LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMG4932LSD belongs to Diodes' DIOFET™ power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and motor control applications where integrated Schottky diodes and AEC-Q101 reliability are required.
FAQ
What does "asymmetrical dual N-channel" mean for DMG4932LSD-13?
It means the two integrated N-channel MOSFETs have deliberately different electrical characteristics: Q1 has lower RDS(ON) (10–12 mΩ) and higher Ciss (1932 pF), while Q2 has higher gate voltage rating (±25 V vs. ±12 V), lower Qg (16.0 nC), and higher VSD (0.65–1.0 V). This enables optimized roles - e.g., Q1 as high-side switch, Q2 as low-side switch - without external component matching.
Is DMG4932LSD-13 recommended for new designs?
No - Diodes Incorporated explicitly marks DMG4932LSD as "NOT RECOMMENDED FOR NEW DESIGN" in its official datasheet (Rev. 5–3, August 2018). It remains available for legacy production and repair, but no alternate part is offered. Engineers starting new projects should consult Diodes' latest dual-MOSFET portfolio, such as the DMN3029LSD or DMN3065LSD series.
Can DMG4932LSD-13 replace two discrete SO-8 MOSFETs?
Yes, but only when the circuit benefits from its specific asymmetry and shared S2/D1 pin. Its internal connection between Pin 4 and Pin 6 means it cannot replicate arbitrary discrete pair configurations - e.g., fully independent sources. Layout must accommodate the fixed internal topology, and gate drive sequencing must respect Q1's ±12 V and Q2's ±25 V limits.
What thermal derating applies to DMG4932LSD-13 at 85 °C ambient?
At TA = 85 °C, continuous drain current drops to 7.2 A (Q1) and 7.5 A (Q2), and power dissipation is limited to ~0.75 W based on RθJA = 107 °C/W. Derating curves in Figures 4 and 15 of the datasheet confirm RDS(ON) increases ~1.6× at 125 °C junction, requiring careful PCB copper area and airflow planning for sustained >5 A operation.
DMG4932LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1932pF @ 15V
- Power - Max:
- 1.19W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG4932LSD-13 FAQ
1.How can I place an order for DMG4932LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG4932LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG4932LSD-13 reliable?
The price and inventory of DMG4932LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4932LSD-13 is usually 5 days.
3.What payment methods are accepted for DMG4932LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4932LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG4932LSD-13?
DMG4932LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG4932LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG4932LSD-13?
For technical support, including DMG4932LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4932LSD-13 requirements.
6.How does Aetrix verify that DMG4932LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMG4932LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4932LSD-13 meets industry standards.
7.What is the process for return or replacement of DMG4932LSD-13?
All DMG4932LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4932LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG4932LSD-13 part is unused and in its original packaging.
Return procedure for DMG4932LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG4932LSD-13 Tags
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