Diodes Incorporated DMG4N60SCT

Overview

DMG4N60SCT from Diodes Incorporated is an N-channel enhancement-mode MOSFET rated for 600 V drain-source voltage, 2.5 Ω R_DS(ON) at V_GS = 10 V, and 4.5 A continuous drain current at T_C = +25°C. It features low input capacitance (532 pF), fast switching, and a TO220AB package optimized for high-efficiency power management in DC-DC converters and motor control circuits.

For engineers reviewing the DMG4N60SCT datasheet, DMG4N60SCT pinout, DMG4N60SCT application, or DMG4N60SCT equivalent, key selection criteria include its 600 V BVDSS rating, 2.5 Ω on-resistance at 10 V gate drive, 14.3 nC total gate charge, thermal resistance of 1.1 °C/W (junction-to-case), and suitability for hard-switched 400–600 V power stages with moderate current demands.

Technical Context

This MOSFET operates as a unidirectional high-voltage power switch in the primary side of offline flyback and forward converters, and in half-bridge motor drive outputs. Its 600 V BVDSS supports operation across universal AC input (85–265 VAC) with margin, while its 2.5 Ω R_DS(ON) balances conduction loss and die size for cost-sensitive industrial power supplies.

The device integrates a body diode with 229 ns reverse recovery time and 1564 nC Q_RR, indicating suitability for non-synchronous rectification where diode conduction is brief and controlled. Gate threshold voltage (2.5–4.5 V) ensures reliable turn-on with standard 10 V gate drivers and compatibility with microcontroller GPIOs via level-shifting.

Key Specifications

Pinout & Package

Package: TO220AB - Through-hole, single-ended, insulated tab, 3-terminal plastic package with 1.85 g mass and UL 94V-0 flammability rating. Mounting requires mechanical isolation from heatsink unless tab is electrically connected to source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and FQP4N60, DMG4N60SCT provides optimal balance of certified green compliance, 2.5 Ω on-resistance, and 14.3 nC gate charge-making it preferred for industrial power supplies requiring regulatory alignment and predictable thermal behavior without over-specifying gate drive capability.

Availability

DMG4N60SCT is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, backlight inverters, and industrial power management systems requiring stable component supply and long-term manufacturability.

Supply support for DMG4N60SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMG4N60SCT belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for cost-effective, thermally robust switching in industrial and commercial offline power conversion applications up to 600 V.

FAQ

Is DMG4N60SCT suitable for use in synchronous rectification?

No. DMG4N60SCT is not optimized for synchronous rectification due to its relatively high R_DS(ON) (2.5 Ω) and slow body diode (229 ns t_RR). Synchronous rectifiers require sub-100 mΩ on-resistance and ultrafast diodes (<50 ns t_RR) to outperform Schottky diodes in low-voltage, high-current secondaries.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±30 V, but the device is characterized and optimized for 10 V drive. Operating above 12 V yields diminishing R_DS(ON) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.

Does the TO220AB package have an electrically isolated tab?

No. The TO220AB package used in DMG4N60SCT has a conductive metal tab directly connected to the Drain terminal. Electrical isolation from the heatsink must be implemented using insulating pads or shoulder washers if the heatsink is grounded or at a different potential.

Can DMG4N60SCT replace older 600 V MOSFETs like IRFBC40?

Yes, with design verification. DMG4N60SCT offers lower R_DS(ON) (2.5 Ω vs. 3.5 Ω), lower Q_g (14.3 nC vs. 25 nC), and improved thermal resistance (1.1 °C/W vs. ~1.5 °C/W), enabling higher efficiency and cooler operation-but gate drive timing and layout must be revalidated due to differing dynamic parameters.