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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMG4N60SJ3

Name: DMG4N60SJ3
Brand: Diodes Incorporated
SKU: DMG4N60SJ3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG4N60SJ3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: DMG4N60SJ3.pdf

Description:: MOSFET N-CH 600V 3A TO251

Quantity:: RFQ Add To RFQ list

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Inventory:5,292

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Product details

Overview

DMG4N60SJ3 from Diodes Incorporated is a 600 V, 3.0 A N-channel enhancement-mode MOSFET in TO251 package, featuring 2.5 Ω R_DS(ON) @ V_GS = 10 V, 14.3 nC total gate charge, and 47 °C/W R_θJA. It delivers low conduction loss and fast switching for offline AC-DC power supplies and DC-DC converters.

For engineers reviewing the DMG4N60SJ3 datasheet, DMG4N60SJ3 pinout, DMG4N60SJ3 application, or DMG4N60SJ3 equivalent, key selection criteria include its 600 V BVDSS rating, 2.5 Ω on-resistance at 10 V drive, 1.7 A avalanche current capability, TO251 thermal performance (R_θJC = 3.0 °C/W), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage switching with controlled body diode recovery (t_RR = 229 ns, Q_RR = 1564 nC) and low Crss (4 pF) to minimize Miller-induced turn-off delay. Its gate threshold voltage range (2.5–4.5 V) ensures robust noise immunity while enabling compatibility with standard 10 V gate drivers.

The device operates across –55 °C to +150 °C junction temperature, with R_DS(ON) normalized to ≤1.8× at 125 °C and stable V_GS(TH) drift (<0.5 V variation over full temperature range). Thermal resistance values are specified for both infinite heatsink (R_θJC = 3.0 °C/W) and FR-4 PCB mounting (R_θJA = 47 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-referenced DC bus voltages in 230 VAC offline SMPS designs.
R_DS(ON)	2.5 Ω @ V_GS = 10 V - Enables <1.8 W conduction loss at 3 A continuous drain current.
Q_g	14.3 nC - Supports efficient 100–300 kHz switching with moderate gate driver strength (e.g., TC4427).
t_RR	229 ns - Limits reverse recovery energy dissipation during hard-switched flyback or PFC stages.
R_θJC	3.0 °C/W - Allows >13 W power dissipation with 40 °C case-to-ambient delta under heatsink mounting.
C_iss/C_oss/C_rss	532 / 47 / 4 pF - Low Crss reduces dv/dt-induced false turn-on risk in high-side configurations.

Pinout & Package

Package: TO251 (also listed as TO251 Type TH), surface-mount, single-gull-wing leadframe, matte tin annealed finish, UL 94V-0 molded plastic body, 0.33 g weight.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≥10 V drive for full enhancement; 3.3 Ω gate resistance limits ringing.
D	Drain	Main high-voltage power path; connected internally to source of integrated body diode (anode at S).
S	Source	Power return node and reference for gate drive; tied to PCB ground plane for thermal and EMI control.

Key Features

Feature	Design Value
Low R_DS(ON)	2.5 Ω @ 10 V enables <1.8 W conduction loss at rated 3 A, reducing heatsink requirements.
High BVDSS rating	600 V supports universal-input (85–265 VAC) offline converters without derating concerns.
Low input capacitance	C_iss = 532 pF minimizes gate drive power and improves efficiency in high-frequency operation.
Green RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IEC 61249-2-21.

Applications

Motor Control

Backlighting

Use Scenario: Driving 24–48 V brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor current flow and direction via H-bridge configuration.

Use Value: 2.5 Ω R_DS(ON) limits I²R loss to <2.3 W at 3 A stall current, enabling compact thermal design.

Use Scenario: Boost-stage switching in LED backlight inverters for LCD panels operating from 12 V DC input.

IC Role / Device Role / Timing Role: Primary-side switch in current-mode boost converter delivering regulated 60–100 V to LED strings.

Use Value: 600 V rating accommodates reflected voltage spikes during LED open-circuit fault conditions.

DC-DC Converters

Power Management

Use Scenario: Primary switch in 30–60 W offline flyback converters powering IoT gateways and smart home hubs.

IC Role / Device Role / Timing Role: Main power switch handling 600 V drain stress during startup and transient overvoltage events.

Use Value: 1.7 A avalanche current rating allows safe clamping of leakage inductance spikes without external snubber.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in universal-input AC-DC adapters (5–24 W).

IC Role / Device Role / Timing Role: Power switch managing input rectification, PFC pre-regulation, or isolated output regulation.

Use Value: 14.3 nC Q_g enables clean turn-on/turn-off with low-cost gate drivers, reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG3N60SJ3	3 A ID, 3.0 Ω R_DS(ON), identical TO251 package and 600 V rating	Higher conduction loss at same current; suitable where gate drive margin is limited	Select when lower gate charge (12.5 nC) is prioritized over on-resistance
STP6NK60ZFP	6 A ID, 1.2 Ω R_DS(ON), TO220FP package, Zener-protected gate	Larger footprint and higher thermal mass; requires different PCB layout and heatsinking	Choose for higher current density needs where TO220 mechanical fit is acceptable

Compared with DMG3N60SJ3, this part offers 17% lower R_DS(ON) at same voltage rating and current; versus STP6NK60ZFP, it trades higher on-resistance for smaller TO251 footprint and lower gate drive demand.

Availability

DMG4N60SJ3 is available at Aetrix Electronics and suitable for motor control, backlighting, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant green manufacturing.

Supply support for DMG4N60SJ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for energy-efficient AC-DC and DC-DC conversion in consumer, industrial, and lighting applications.

FAQ

Is DMG4N60SJ3 suitable for use in continuous conduction mode (CCM) PFC circuits?

No - its 3.0 A continuous drain current rating and 2.5 Ω R_DS(ON) make it unsuitable for typical CCM PFC stages, which require ≥6 A ID and sub-1 Ω on-resistance. It is rated for discontinuous mode (DCM) or transition mode (TM) PFC in sub-30 W applications where peak currents remain below 6 A.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-source voltage is ±30 V, but the device is characterized and optimized for 10 V drive. Operation above 12 V provides no significant R_DS(ON) improvement and increases gate oxide stress risk; 10 V is the recommended nominal drive level per datasheet test conditions.

Does DMG4N60SJ3 include integrated gate protection?

No - it lacks built-in gate protection diodes or Zener clamps. External gate resistors (≥10 Ω) and TVS diodes (e.g., SMAJ15A) between gate and source are required to suppress ESD and dv/dt-induced transients in real-world PCB layouts.

Can DMG4N60SJ3 replace DMG3N60SJ3 in existing designs without layout changes?

Yes - both share identical TO251 package dimensions, pinout (G-D-S), and thermal pad layout. The lower R_DS(ON) (2.5 Ω vs. 3.0 Ω) reduces conduction loss by ~17%, but gate charge increases slightly (14.3 nC vs. 12.5 nC), requiring verification of gate driver slew rate and rise/fall time margins.

DMG4N60SJ3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.3 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 532 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

DMG4N60SJ3 FAQ

1.How can I place an order for DMG4N60SJ3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4N60SJ3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4N60SJ3 reliable?

The price and inventory of DMG4N60SJ3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4N60SJ3 is usually 5 days.

3.What payment methods are accepted for DMG4N60SJ3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4N60SJ3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4N60SJ3?

DMG4N60SJ3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4N60SJ3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4N60SJ3?

For technical support, including DMG4N60SJ3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4N60SJ3 requirements.

6.How does Aetrix verify that DMG4N60SJ3 is sourced from the original manufacturer or authorized distributors?

All DMG4N60SJ3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4N60SJ3 meets industry standards.

7.What is the process for return or replacement of DMG4N60SJ3?

All DMG4N60SJ3 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4N60SJ3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4N60SJ3 part is unused and in its original packaging.

Return procedure for DMG4N60SJ3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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