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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMG4N60SK3-13

Name: DMG4N60SK3-13
Brand: Diodes Incorporated
SKU: DMG4N60SK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG4N60SK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMG4N60SK3-13.pdf

Description:: MOSFET N-CH 600V 3.7A TO252 T&R

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Product details

Overview

DMG4N60SK3-13 from Diodes Incorporated is a 600V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring R_DS(ON) = 2.3 Ω @ V_GS = 10 V, I_D = 3.7 A at T_C = +25°C, and 100% production-tested UIS capability. It serves as a high-voltage switching element in offline DC-DC converters and motor control stages where low conduction loss and robust avalanche performance are required.

For engineers reviewing the DMG4N60SK3-13 datasheet, DMG4N60SK3-13 pinout, DMG4N60SK3-13 application, or DMG4N60SK3-13 equivalent, key selection criteria include its 600V V_DSS, 2.3Ω R_DS(ON), TO252 thermal resistance (R_θJC = 2.6°C/W), body diode recovery charge (Q_RR = 1564 nC), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage power switching with controlled gate charge (Q_g = 14.3 nC) and low Crss (4 pF), enabling fast turn-on/turn-off transitions while maintaining EMI manageability. Its 600V breakdown voltage and 90 mJ avalanche energy rating support reliable operation under inductive load transients.

The device integrates a low-threshold V_GS(TH) (2.5–4.5 V) and exhibits normalized R_DS(ON) variation of ≤3× across –55°C to +150°C, ensuring stable on-resistance over wide temperature ranges without external gate drive compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands up to 600 V drain-source blocking voltage in off-state, suitable for universal-input offline SMPS.
R_DS(ON)	2.3 Ω @ V_GS = 10 V - Delivers <1.8 W conduction loss at 3.7 A, enabling compact heatsink design in 15–30 W power stages.
I_D (T_C = 25°C)	3.7 A - Continuous current rating at case temperature 25°C; derates to 2.4 A at 100°C for thermal safety margin.
E_AS	90 mJ - Guaranteed avalanche energy supports unclamped inductive switching in motor drives without snubber circuits.
Q_g	14.3 nC - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz switching with standard gate drivers.
R_θJC	2.6 °C/W - Junction-to-case thermal resistance allows direct mounting to PCB copper pour or heatsink for 48 W power dissipation at T_C = 25°C.
Q_RR	1564 nC - Body diode reverse recovery charge impacts efficiency and EMI in synchronous rectification or freewheeling paths.

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-die MOSFET with exposed drain pad for thermal conduction. Dimensions per Diodes Inc. outline BR/TH variants: D = 6.10 mm, E = 6.60 mm, H = 9.90–10.30 mm, L = 1.60 mm, b3 = 5.33 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal and electrical integrity.
Source	Reference node for gate drive and current return	Low-inductance source connection critical for minimizing switching oscillation; ties directly to power ground plane.
Gate	Control input for channel conduction	High-impedance input requiring <100 nA leakage; sensitive to ESD; requires RC snubber if driven by long traces.

Key Features

Feature	Design Value
100% UIS tested	Every unit validated for 1.7 A avalanche current and 90 mJ energy, eliminating need for external clamping in motor flyback paths.
Low C_iss/C_rss	532 pF input capacitance and only 4 pF reverse transfer capacitance reduce Miller effect, improving noise immunity and dV/dt ruggedness.
Green RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb), meeting EU Directive 2015/863/EU.
Low gate input resistance	3.3 Ω gate resistance minimizes ringing during switching transitions, reducing need for external gate resistors in medium-speed designs.

Applications

Motor Control

Backlight Inverters

Use Scenario: Brushless DC motor half-bridge leg in HVAC blowers and appliance pumps operating from 200–400 VDC bus.

IC Role / Device Role / Timing Role: High-side or low-side switching element controlling phase current with 10–20 kHz PWM frequency.

Use Value: 2.3 Ω R_DS(ON) limits conduction loss to <3.2 W at 2.7 A RMS, while 90 mJ E_AS absorbs commutation spikes without snubbers.

Use Scenario: CCFL or LED backlight inverter stage for industrial displays powered from 12–24 VDC input.

IC Role / Device Role / Timing Role: Primary-side switch in resonant Royer or push-pull topology driving high-voltage transformer.

Use Value: 600 V V_DSS provides 2× margin over reflected 250–300 V peak voltages; low Q_g enables clean 40–100 kHz switching with minimal driver loss.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: Primary-side switch in 15–25 W flyback adapters for medical and industrial equipment.

IC Role / Device Role / Timing Role: Main power switch turning on/off 50–100 kHz to regulate output via optocoupler feedback.

Use Value: 2.3 Ω R_DS(ON) ensures >85% efficiency at full load; 100% UIS test guarantees reliability under line surge and no-load transient conditions.

Use Scenario: Isolated 48 V to 12 V DC-DC converter in factory automation controllers with 24 V auxiliary rail.

IC Role / Device Role / Timing Role: Active clamp or forward converter primary switch handling 300–400 VDC input with 200 kHz operation.

Use Value: Low Crss (4 pF) reduces cross-conduction risk in active-clamp topologies; R_θJC = 2.6°C/W enables direct heatsink mounting for 100% load continuous operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN60H3D5SK3	R_DS(ON) = 3.5 Ω @ 10 V, V_DSS = 600 V, Q_g = 11.5 nC	Higher conduction loss but lower gate charge; better for higher-frequency, lower-current operation	Select when prioritizing switching speed over conduction efficiency in <2 A average current designs.
STP6NK60ZFP	R_DS(ON) = 2.2 Ω @ 10 V, V_DSS = 600 V, TO220FP package, R_θJC = 2.5°C/W	Same R_DS(ON) but through-hole package; higher thermal mass but no SMT assembly compatibility	Choose for prototyping or legacy through-hole boards where TO252 footprint is unavailable.

Compared with DMN60H3D5SK3 and STP6NK60ZFP, DMG4N60SK3-13 delivers optimal balance of low R_DS(ON), moderate Q_g, and SMT-ready TO252 thermal performance-making it preferred for space-constrained, medium-power industrial SMPS where both efficiency and manufacturability matter.

Availability

DMG4N60SK3-13 is available at Aetrix Electronics and suitable for motor control, backlight inverters, and offline AC-DC adapters requiring stable component supply, consistent parametric performance, and RoHS-compliant green manufacturing.

Supply support for DMG4N60SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for industrial and consumer power conversion systems demanding high reliability, avalanche ruggedness, and green compliance.

FAQ

What is the maximum safe operating junction temperature for DMG4N60SK3-13?

The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C for long-term reliability. Derating curves in the datasheet show R_DS(ON) increases by ~2.5× from 25°C to 150°C, so thermal design must ensure T_J stays below 135°C under worst-case ambient and power dissipation conditions.

Does DMG4N60SK3-13 require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 3.3 Ω intrinsic gate resistance and 532 pF C_iss. Without it, overshoot exceeding ±30 V V_GS rating may occur during fast switching, risking gate oxide damage.

Can DMG4N60SK3-13 replace older 600V MOSFETs like STP6NK60ZFP in existing designs?

Yes, with layout adaptation: both share 600 V V_DSS and similar R_DS(ON), but DMG4N60SK3-13 uses TO252 versus TO220FP. The smaller footprint requires updated PCB land pattern and thermal pad design, though its lower R_θJC (2.6 vs. 2.5°C/W) and green compliance offer advantages in new revisions.

Is the body diode suitable for synchronous rectification in flyback converters?

No-the body diode has t_RR = 229 ns and Q_RR = 1564 nC, resulting in high reverse recovery loss and EMI. For synchronous rectification, an external Schottky or dedicated SR controller with low-Q_RR FET is required; this MOSFET is intended for primary-side switching only.

DMG4N60SK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.3 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 532 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMG4N60SK3-13 FAQ

1.How can I place an order for DMG4N60SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4N60SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4N60SK3-13 reliable?

The price and inventory of DMG4N60SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4N60SK3-13 is usually 5 days.

3.What payment methods are accepted for DMG4N60SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4N60SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4N60SK3-13?

DMG4N60SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4N60SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4N60SK3-13?

For technical support, including DMG4N60SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4N60SK3-13 requirements.

6.How does Aetrix verify that DMG4N60SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMG4N60SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4N60SK3-13 meets industry standards.

7.What is the process for return or replacement of DMG4N60SK3-13?

All DMG4N60SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG4N60SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4N60SK3-13 part is unused and in its original packaging.

Return procedure for DMG4N60SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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