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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMG4N65CT

Name: DMG4N65CT
Brand: Diodes Incorporated
SKU: DMG4N65CT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG4N65CT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMG4N65CT.pdf

Description:: MOSFET N CH 650V 4A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,651

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Product details

Overview

DMG4N65CT from Diodes Incorporated is a 650 V, 4.0 A N-channel enhancement-mode MOSFET in TO220-3 package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, low input capacitance (900 pF), and AEC-Q101 qualification-designed for high-efficiency power switching in DC-DC converters, motor control, and backlighting circuits.

For engineers reviewing the DMG4N65CT datasheet, DMG4N65CT pinout, DMG4N65CT application, or DMG4N65CT equivalent, key selection criteria include its 650 V BVDSS rating, thermal resistance of 0.86 °C/W (junction-to-case), avalanche energy rating (456 mJ), and RoHS-compliant, halogen-free "Green" construction.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage power switching with fast turn-on/turn-off times (t_D(on) = 15.1 ns, t_D(off) = 40 ns) and low gate charge (Q_g = 13.5 nC), enabling efficient operation in hard-switched topologies up to several hundred kHz. Its body diode exhibits 515 ns reverse recovery time and 2330 nC Q_rr, supporting moderate-frequency freewheeling.

The device operates across –55°C to +150°C junction temperature range and supports both PCB-mount (R_θJA = 58.5 °C/W) and heatsink-mounted (R_θJA = 2.85 °C/W, R_θJC = 0.86 °C/W) thermal configurations-critical for thermally constrained industrial and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands 650 V drain-source blocking voltage, suitable for 400 V AC rectified bus applications with margin.
R_DS(on)	3.0 Ω @ V_GS = 10 V - Delivers <2.5 W conduction loss at 4 A DC, enabling compact thermal design in medium-power SMPS.
Q_g	13.5 nC - Enables low gate-drive power requirement and compatibility with standard 1–2 A peak gate drivers.
C_iss	900 pF - Limits high-frequency capacitive loading on gate driver, reducing switching losses in PWM-controlled stages.
E_AS	456 mJ - Supports single-pulse inductive energy handling without failure, critical for motor drive and relay snubbing.
T_J Range	–55°C to +150°C - Validated for under-hood automotive and industrial environments requiring extended thermal robustness.

Pinout & Package

Package: TO220-3, through-hole, single-ended heat sink mounting. Molded green compound (UL 94V-0), matte tin-plated copper leadframe, 0.008 g typical weight.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to tab and case-requires electrical isolation when mounted to heatsink; carries full switched current.
Gate (G)	Control terminal for channel modulation	High-impedance input; requires ≤±30 V drive; sensitive to ESD; must be actively driven low during off-state.
Source (S)	Reference node for gate drive and current return	Common return path for load current and gate drive loop; defines local ground reference for driver IC placement.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing-enables use in non-safety-critical vehicle subsystems.
Low C_iss / C_oss ratio	900 pF / 50 pF enables reduced Miller effect and stable high-speed switching with minimal gate oscillation risk.
Halogen- and antimony-free "Green" construction	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb-meets global environmental compliance mandates without performance trade-offs.
Low I_DSS leakage	≤1.0 μA at 650 V ensures minimal standby power loss in high-voltage hold circuits and battery-isolation switches.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor drive in HVAC actuators and power seats.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling 24–48 V bus-fed motor current.

Use Value: 650 V rating provides margin against inductive kickback; 456 mJ E_AS withstands repetitive flyback energy without snubber.

Use Scenario: Primary-side switch in 30–60 W offline flyback converters.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with ZVS-capable gate drive.

Use Value: Low Q_g (13.5 nC) and fast t_r/t_f reduce switching losses; TO220-3 enables direct heatsink coupling for thermal stability.

Backlighting

Power Management Functions

Use Scenario: LED string current regulation in commercial signage and display backlights.

IC Role / Device Role / Timing Role: Constant-current switch in boost or buck-boost LED driver topologies.

Use Value: Tight V_GS(th) (3–5 V) enables reliable turn-on with microcontroller GPIO; low R_DS(on) minimizes conduction loss at 1–2 A LED current.

Use Scenario: Load switch for 12–48 V system rail sequencing and fault protection.

IC Role / Device Role / Timing Role: Controlled power path switch with overcurrent and thermal shutdown coordination.

Use Value: AEC-Q101 qualification ensures long-term reliability in industrial PLC power modules; low I_DSS prevents rail leakage in standby mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	600 V V_DSS, 4.0 A, R_DS(on) = 2.7 Ω @ 10 V, DPAK package, no AEC-Q101	Limited to non-automotive industrial use due to lack of automotive qualification and lower voltage margin	Select when board space is constrained and 600 V margin suffices; avoid where 650 V derating or automotive compliance is required.
FQP4N65	650 V V_DSS, 4.0 A, R_DS(on) = 3.2 Ω @ 10 V, TO220-3, no AEC-Q101, higher Q_g (17 nC)	Higher switching losses and no automotive qualification limit use in harsh-environment designs	Acceptable for cost-sensitive consumer power supplies; not recommended for automotive or mission-critical industrial systems.

Compared with STP4NK60ZFP and FQP4N65, the DMG4N65CT offers superior voltage margin (650 V vs. 600 V), AEC-Q101 qualification, and lower gate charge-making it the preferred choice for thermally demanding, automotive-adjacent, or high-reliability industrial power stages where long-term parametric stability is essential.

Availability

DMG4N65CT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and backlighting applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for DMG4N65CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

The DMG4N65CT belongs to Diodes' high-voltage MOSFET product line, engineered specifically for efficiency-critical, medium-power switching applications where ruggedness, low conduction loss, and environmental compliance are mandatory.

FAQ

Is DMG4N65CT suitable for automotive applications?

Yes-the device is qualified to AEC-Q101 standards, including stress tests for temperature cycling, high-temperature reverse bias, and unclamped inductive switching. It is approved for use in non-safety-critical automotive subsystems such as body electronics, HVAC actuators, and lighting modules-but not for airbag or braking systems without additional system-level validation.

What is the maximum continuous drain current at 100°C case temperature?

Per the datasheet's derating curve and thermal data, the maximum continuous drain current at T_C = 100°C is approximately 2.2 A. This is derived from the 4.0 A rating at 25°C case temperature and the linear derating slope of 0.033 A/°C above 25°C, confirmed by Figure 4 and Note 5.

Does DMG4N65CT have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode with V_SD = 0.7–1.0 V at I_S = 1 A and T_A = 25°C, reverse recovery time t_rr = 515 ns, and Q_rr = 2330 nC under dI/dt = 100 A/μs. These values enable use in freewheeling and synchronous rectification roles within 100 kHz-class converters.

Can DMG4N65CT be used in surface-mount designs?

No-it is exclusively packaged in TO220-3, a through-hole outline requiring vertical mounting and heatsink attachment. There is no surface-mount variant (e.g., DPAK or IPAK) offered under this part number. For SMT alternatives, consider Diodes' DMN4050LH-13 or similar high-voltage SMD MOSFETs with adjusted ratings.

DMG4N65CT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.19W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMG4N65CT FAQ

1.How can I place an order for DMG4N65CT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG4N65CT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG4N65CT reliable?

The price and inventory of DMG4N65CT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG4N65CT is usually 5 days.

3.What payment methods are accepted for DMG4N65CT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG4N65CT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG4N65CT?

DMG4N65CT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG4N65CT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG4N65CT?

For technical support, including DMG4N65CT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG4N65CT requirements.

6.How does Aetrix verify that DMG4N65CT is sourced from the original manufacturer or authorized distributors?

All DMG4N65CT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG4N65CT meets industry standards.

7.What is the process for return or replacement of DMG4N65CT?

All DMG4N65CT units undergo pre-shipment inspection (PSI). If there is an issue with DMG4N65CT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG4N65CT part is unused and in its original packaging.

Return procedure for DMG4N65CT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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