Diodes Incorporated DMG4N65CTI

Overview

DMG4N65CTI from Diodes Incorporated is a 650 V, 4.0 A N-channel enhancement-mode power MOSFET in ITO-220AB package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 456 mJ E_AS, and AEC-Q101 qualification-designed for high-voltage DC-DC converters, motor control stages, and backlighting power switches where robust avalanche capability and low conduction loss are critical.

For engineers reviewing the DMG4N65CTI datasheet, DMG4N65CTI pinout, DMG4N65CTI application, or DMG4N65CTI equivalent, key selection criteria include its 650 V BVDSS rating, 13.5 nC total gate charge, 900 pF input capacitance, -55°C to +150°C operating range, and ITO-220AB thermal performance (R_θJC = 10.69°C/W) for thermally constrained industrial power designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage switching with controlled body diode recovery (t_rr = 515 ns, Q_rr = 2330 nC) and low gate charge (Q_g = 13.5 nC), enabling efficient hard-switched topologies up to 100 kHz. Its 650 V breakdown voltage supports 400 V DC bus applications with 60% derating margin.

The device integrates a fast-recovery intrinsic body diode rated for 4 A continuous source current (V_SD = 0.7 V typ.), and exhibits stable R_DS(on) over temperature (±15% variation from -55°C to +150°C at fixed V_GS), supporting reliable operation in automotive under-hood environments.

Key Specifications

Pinout & Package

Package: ITO-220AB - Molded plastic case with matte tin-plated copper leadframe; UL 94V-0 rated; 0.008 g weight; moisture sensitivity level 1; designed for through-hole mounting and direct heatsink attachment via drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK60ZFP and IXTP4N65X2, DMG4N65CTI delivers superior thermal performance (R_θJC = 10.69°C/W), AEC-Q101 qualification, and halogen-free compliance-making it the preferred choice for automotive-adjacent and thermally demanding industrial power stages where long-term reliability and regulatory alignment are mandatory.

Availability

DMG4N65CTI is available at Aetrix Electronics and suitable for motor control, backlighting power supplies, and DC-DC converters requiring stable component supply, automotive-grade reliability, and RoHS-compliant manufacturing.

Supply support for DMG4N65CTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

DMG4N65CTI belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for ruggedized 600–700 V switching applications in space-constrained, thermally aggressive environments such as motor drives and offline power supplies.

FAQ

Is DMG4N65CTI suitable for use in automotive applications?

Yes-DMG4N65CTI is qualified to AEC-Q101 standards, including high-temperature reverse bias, high-temperature gate bias, and temperature cycling tests. It operates reliably from -55°C to +150°C junction temperature and meets RoHS 2 and halogen-free requirements, making it appropriate for non-safety-critical automotive subsystems like body control modules, HVAC actuators, and lighting drivers.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = +100°C, the maximum continuous drain current is 2.2 A, derived from thermal derating: ID = 4.0 A × (1 − (100 − 25)/ (150 − 25)) = 2.2 A, based on the device's 150°C maximum junction temperature and 10.69°C/W R_θJC. This value assumes proper heatsinking and steady-state thermal equilibrium.

Does DMG4N65CTI have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic fast-recovery body diode with typical forward voltage V_SD = 0.7 V at I_S = 1 A and T_A = 25°C. Key recovery parameters include reverse recovery time t_rr = 515 ns and reverse recovery charge Q_rr = 2330 nC at dI/dt = 100 A/µs, enabling use in freewheeling and synchronous rectification roles without external diode supplementation.

How does the ITO-220AB package differ from standard TO-220AB in thermal performance?

The ITO-220AB package uses a thinner mold compound and optimized internal leadframe geometry, achieving R_θJC = 10.69°C/W versus ~12–14°C/W for standard TO-220AB variants. Its UL 94V-0 flammability rating and matte tin plating also provide enhanced solderability and safety compliance, particularly important for high-reliability industrial and automotive assemblies.