Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMG5802LFX-7

Part No.:
DMG5802LFX-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-VFDFN Exposed Pad
Datasheet:
AetrixDMG5802LFX-7.pdf
Description:
MOSFET 2N-CH 24V 6.5A 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,779

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMG5802LFX-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a W-DFN5020-6 package, rated for 24V V(BR)DSS, 15mΩ RDS(ON) at 4.5V VGS, and 6.5A continuous drain current at 25°C. It delivers low conduction loss and fast switching for compact DC-DC converters and power management circuits in space-constrained industrial and consumer systems.

For engineers reviewing the DMG5802LFX-7 datasheet, DMG5802LFX-7 pinout, DMG5802LFX-7 application, or DMG5802LFX-7 equivalent, key selection criteria include its dual-channel layout, 2.5V logic-level gate drive compatibility, 3kV ESD protection, thermal resistance of 126.5°C/W, and AEC-Q101 qualification for reliability-critical designs.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection-each channel operates independently with separate source, gate, and drain terminals. Its 0.8mm height and 2.0×5.0mm footprint enable high-density PCB layouts while maintaining thermal performance via exposed drain pads.

The device uses trench-gate technology to achieve low RDS(ON) down to 11mΩ (typical) at 4.5V VGS and maintains stable threshold voltage (0.6–1.5V) across –55°C to +150°C ambient, supporting robust operation in thermally variable environments without gate drive overdesign.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS24V - supports input rails up to 20V DC-DC stages with 20% safety margin
RDS(ON)15mΩ @ 4.5V VGS - enables ≤98mW conduction loss at 6.5A, critical for <1W power stages
ID (continuous)6.5A @ 25°C - sustains full load in dual-phase buck controllers with FR-4 PCB layout
Qg14.5nC @ 4.5V - allows efficient 1MHz switching with <1W gate drive power at 5V logic
Ciss1066pF - determines Miller effect magnitude and gate driver sizing for hard-switched topologies
TJ range–55°C to +150°C - qualified for under-hood automotive and industrial ambient conditions
ESD rating3kV HBM - eliminates need for external TVS on gate lines in handheld and portable designs

Pinout & Package

Package: W-DFN5020-6 - 2.0mm × 5.0mm × 0.8mm molded plastic body with exposed drain pads for thermal dissipation; UL 94V-0 rated, MSL Level 1.

Pin/TerminalCircuit RoleDesign Meaning
D1Drain of Channel 1High-side or low-side switch node; electrically isolated from D2; connects to exposed pad 1
S1Source of Channel 1Reference node for Channel 1; ties to local ground or bootstrap return path
G1Gate of Channel 1Logic-level control input; requires 2.5V min for 5.6A ID; ESD-protected
D2Drain of Channel 2Independent switch node; connects to exposed pad 2; no internal connection to D1
S2Source of Channel 2Separate reference for Channel 2; enables dual independent half-bridges or load switches
G2Gate of Channel 2Independent control input; identical electrical characteristics to G1; no cross-talk coupling

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables synchronous rectification in dual-output buck converters or redundant load switching without shared failure modes
15mΩ RDS(ON) @ 4.5V VGSReduces conduction loss by >30% vs. legacy 20mΩ dual MOSFETs at same current, improving 12V→3.3V converter efficiency
Low Ciss (1066pF) & Crss (127pF)Minimizes switching energy and dv/dt-induced shoot-through risk in high-frequency (>500kHz) topologies
AEC-Q101 qualifiedValidated for automotive power modules requiring 1000-hour HTOL, ESD, and temperature cycling per stress test plan
Green, halogen-free constructionMeets IEC 61249-2-21 and JEDEC JS709B requirements for bromine (<900ppm), chlorine (<900ppm), antimony (<1000ppm)

Applications

DC-DC Buck ConverterUSB Power Delivery Switch

Use Scenario: Dual-phase 12V-to-1.2V VRM for FPGA core supply with interleaved operation.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier per phase; channels operate 180° out-of-phase to reduce input ripple current.

Use Value: 15mΩ RDS(ON) limits junction temperature rise to <45°C at 6.5A, enabling 2-layer PCB without heatsink.

Use Scenario: Dual-input USB-C PD port with automatic source/sink selection and overcurrent protection.

IC Role / Device Role / Timing Role: Independent load switches controlling VBUS paths from Type-C CC logic; each channel handles 3A at 5V/9V/15V.

Use Value: 2.5V gate threshold ensures reliable turn-on from microcontroller GPIOs; 3kV ESD prevents latch-up during hot-plug events.

Automotive Body Control ModuleIndustrial PLC Digital Output

Use Scenario: LED headlight dimming and motor actuator drive in BCM with CAN interface.

IC Role / Device Role / Timing Role: Dual-channel PWM-driven load switch for 24V incandescent and LED loads; channels driven by MCU timer outputs.

Use Value: –55°C to +150°C TJ range supports engine bay mounting; AEC-Q101 qualification ensures 15-year field reliability.

Use Scenario: 24V DC solid-state relay replacement in modular I/O terminal blocks.

IC Role / Device Role / Timing Role: Two independent programmable outputs driving solenoids and indicators; each channel controlled via isolated digital inputs.

Use Value: Low 20mΩ RDS(ON) at 2.5V VGS enables direct drive from optocoupler outputs; 0.03g weight reduces mechanical stress on connectorized PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN5011LFG-7Single-channel, same W-DFN5020-6 package, 11mΩ RDS(ON) @ 4.5V but no dual configurationRequires two devices for dual functionality; higher board area and gate drive complexitySelect when discrete channel isolation or staggered timing is required beyond dual integration
SI6926ADQ-T1-GE36-pin SO-8, 22mΩ RDS(ON) @ 4.5V, 5.3A ID, no AEC-Q101 qualificationLarger footprint (5×6mm), higher thermal resistance (130°C/W), unsuitable for automotive under-hood useChoose for cost-sensitive industrial controls where AEC-Q101 and space constraints are not mandatory

Compared with DMN5011LFG-7 and SI6926ADQ-T1-GE3, the DMG5802LFX-7 uniquely combines dual-channel integration, AEC-Q101 qualification, and sub-15mΩ RDS(ON) in a 2.0×5.0mm footprint-making it optimal for space- and reliability-constrained dual-switching nodes where board area and thermal budget are primary constraints.

Availability

DMG5802LFX-7 is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery systems, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.

Supply support for DMG5802LFX-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMG5802LFX-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power conversion in automotive, computing, and industrial applications where compact size and thermal performance are critical.

FAQ

What is the maximum safe operating temperature for DMG5802LFX-7?

The DMG5802LFX-7 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum storage temperature is also –55°C to +150°C. When mounted on an FR-4 PCB with minimum recommended pad layout, the device achieves a thermal resistance of 126.5°C/W, allowing sustained operation at 6.5A only if ambient temperature remains ≤75°C or board-level cooling is applied.

Can DMG5802LFX-7 be used in a synchronous buck converter's high-side position?

Yes-DMG5802LFX-7 supports high-side switching when driven by a bootstrap gate driver capable of delivering ≥4.5V above the source potential. Its 12V maximum gate-source voltage rating and 15mΩ RDS(ON) at 4.5V VGS make it suitable for high-side roles in 12V-input buck converters operating up to 500kHz, provided dead-time control prevents shoot-through.

Does DMG5802LFX-7 have integrated body diodes, and what is their forward voltage?

Yes-each channel includes a monolithic body diode with typical forward voltage of 0.6V at 1A source current and 25°C ambient. This diode enables freewheeling in buck and flyback topologies and supports reverse-current protection in load-switch configurations without external components.

Is the W-DFN5020-6 package lead-free and RoHS compliant?

Yes-the DMG5802LFX-7 is fully lead-free and RoHS 2 (2011/65/EU) compliant, with no intentionally added lead, halogen, or antimony. Its molding compound meets UL 94V-0 flammability rating and contains <900ppm bromine, <900ppm chlorine, and <1000ppm antimony, satisfying JEDEC JS709B "Green" definitions.

DMG5802LFX-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-VFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Common Drain
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
24V
Current - Continuous Drain (Id) @ 25°C:
6.5A
Rds On (Max) @ Id, Vgs:
15mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
31.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1066.4pF @ 15V
Power - Max:
980mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
W-DFN5020-6

DMG5802LFX-7 FAQ

1.How can I place an order for DMG5802LFX-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG5802LFX-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG5802LFX-7 reliable?

The price and inventory of DMG5802LFX-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG5802LFX-7 is usually 5 days.

3.What payment methods are accepted for DMG5802LFX-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG5802LFX-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG5802LFX-7?

DMG5802LFX-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG5802LFX-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG5802LFX-7?

For technical support, including DMG5802LFX-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG5802LFX-7 requirements.

6.How does Aetrix verify that DMG5802LFX-7 is sourced from the original manufacturer or authorized distributors?

All DMG5802LFX-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG5802LFX-7 meets industry standards.

7.What is the process for return or replacement of DMG5802LFX-7?

All DMG5802LFX-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG5802LFX-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG5802LFX-7 part is unused and in its original packaging.

Return procedure for DMG5802LFX-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG5802LFX-7 Tags

  • DMG5802LFX-7
  • DMG5802LFX-7 PDF
  • DMG5802LFX-7 Datasheet
  • DMG5802LFX-7 Specifications
  • DMG5802LFX-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMG5802LFX-7
  • Buy DMG5802LFX-7
  • DMG5802LFX-7 Price
  • DMG5802LFX-7 Distributor
  • DMG5802LFX-7 Supplier
  • DMG5802LFX-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER