Diodes Incorporated DMG6301UDW-13

Overview

DMG6301UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 25V V_DS, 4Ω R_DS(ON) at V_GS = 4.5V, and 0.24A continuous drain current at +25°C. It integrates gate protection diodes per channel and supports low-voltage logic-level drive (V_GS(th) = 0.65–1.5V), enabling use in compact battery-powered load switching circuits.

For engineers reviewing the DMG6301UDW-13 datasheet, DMG6301UDW-13 pinout, DMG6301UDW-13 application, or DMG6301UDW-13 equivalent, key selection criteria include dual-channel R_DS(ON) matching, ESD-protected gate (>6kV HBM), thermal resistance (R_ΘJA = 409°C/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET uses planar silicon process to achieve matched threshold voltages (V_GS(th)) and on-resistances across both channels, supporting synchronous or independent control of two low-power loads. Its low input capacitance (C_iss = 27.9pF) and fast switching (t_D(on) = 2.9ns, t_D(off) = 6.6ns) minimize drive loss in high-frequency DC-DC converter topologies.

The integrated gate protection diodes provide bidirectional ESD clamping without external components, while the 0.3W power dissipation rating and 137°C/W junction-to-case thermal resistance require careful PCB copper layout per AP02001 guidelines for thermal management in space-constrained applications.

Key Specifications

Pinout & Package

Package: SOT363 - 6-pin ultra-small surface-mount package (2.20 × 1.35 × 0.95 mm), moisture sensitivity level 1, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN601DWK-7 and FDMA1023PZ, the DMG6301UDW-13 offers superior low-voltage drive capability, lower on-resistance at 2.7V gate bias, and built-in ESD protection-making it optimal for space- and power-constrained 3.3V embedded systems where dual independent switching is required.

Availability

DMG6301UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and DC-DC converter power stage applications requiring stable component supply and long-term manufacturability.

Supply support for DMG6301UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The DMG6301UDW belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for compact, low-power load switching in portable and automotive electronics where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current per channel at +70°C ambient?

The DMG6301UDW-13 supports 0.19A continuous drain current per channel at TA = +70°C when VGS = 4.5V, derated from 0.24A at +25°C due to thermal limitations of the SOT363 package and its 409°C/W junction-to-ambient thermal resistance.

Can this device be used in a common-drain (source-follower) configuration?

Yes-each channel operates as an enhancement-mode N-channel MOSFET with symmetrical source/drain characteristics. The datasheet confirms bidirectional conduction capability (VSD = 0.76V typical), making it suitable for source-follower or analog switch applications with proper gate biasing.

Is the SOT363 package compatible with standard reflow profiles for lead-free soldering?

Yes-the DMG6301UDW-13 is fully RoHS-compliant with matte tin plating and qualified for peak reflow temperatures up to 260°C per J-STD-020. Its moisture sensitivity level 1 rating means it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly.

Does the internal schematic show body diode orientation for each channel?

Yes-the internal schematic shows S1–D1 and S2–D2 connections with intrinsic body diodes oriented anode-to-source and cathode-to-drain. This enables reverse-current blocking in high-side switch configurations and freewheeling paths in inductive load driving.