Diodes Incorporated DMG6301UDW-7
- Part No.:
- DMG6301UDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMG6301UDW-7.pdf
- Description:
- MOSFET 2N-CH 25V 0.24A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:2,990
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Product details
Overview
DMG6301UDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 25V V(BR)DSS, 4Ω RDS(ON) @ VGS = 4.5V, and 0.24A continuous drain current at +25°C. It integrates two independent gate-protected channels for compact power switching in space-constrained DC-DC converters and battery-operated systems.
For engineers reviewing the DMG6301UDW-7 datasheet, DMG6301UDW-7 pinout, DMG6301UDW-7 application, or DMG6301UDW-7 equivalent, key selection criteria include low gate threshold (0.65–1.5V), ESD-protected gate (>6kV HBM), fast switching (tD(on) = 2.9ns), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET uses planar silicon process to achieve low RDS(ON) while maintaining low input capacitance (Ciss = 27.9pF) and fast turn-on/turn-off timing. Its symmetric dual-die structure supports independent channel control with matched threshold voltage (VGS(th) typ. 0.85V) and on-resistance characteristics across temperature.
The device operates with gate drive voltages as low as 2.7V, enabling direct interface with 3.3V logic and microcontrollers. Thermal resistance RΘJA is 334°C/W under optimized 2oz copper pad layout, supporting stable operation up to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 25V - Maximum drain-source blocking voltage before avalanche conduction begins |
| RDS(ON) | 4Ω @ VGS = 4.5V, ID = 0.4A - On-resistance determines conduction loss in high-efficiency power stages |
| ID (continuous) | 0.24A @ TA = +25°C, VGS = 4.5V - Continuous current capability under standard PCB thermal conditions |
| VGS(th) | 0.65–1.5V - Gate threshold range ensures reliable turn-on with 3.3V logic-level drivers |
| Ciss | 27.9pF - Input capacitance directly impacts gate drive power and switching speed |
| ESD Rating | >6kV HBM - Integrated gate protection eliminates need for external ESD diodes in layout |
| PD (max) | 0.37W - Power dissipation limit under 2oz copper pad layout defines thermal headroom |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount package with 0.65mm pitch, 2.2mm × 1.35mm footprint, and 0.95mm max height. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to pin 4 (S2) in common-source configuration |
| 2 (G1) | Gate of Channel 1 | Control terminal for first channel; ESD-protected with >6kV HBM rating |
| 3 (D1) | Drain of Channel 1 | High-side switching node for first channel; rated for 25V breakdown |
| 4 (S2) | Source of Channel 2 | Low-side return path for second MOSFET; tied to pin 1 for dual-source configuration |
| 5 (G2) | Gate of Channel 2 | Independent control terminal for second channel; identical ESD protection as G1 |
| 6 (D2) | Drain of Channel 2 | High-side switching node for second channel; electrically isolated from D1 |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | 0.65–1.5V VGS(th) enables direct drive from 3.3V microcontrollers without level-shifting |
| Integrated gate ESD protection | >6kV Human Body Model rating eliminates need for external TVS on gate traces |
| Matched dual-channel performance | Paired RDS(ON) and VGS(th) across channels simplifies design of symmetrical load switches |
| AEC-Q101 qualified | Qualified for automotive applications requiring extended temperature (-55°C to +150°C) and reliability validation |
Applications
| DC-DC Converter Switching Stage | Battery Protection Circuit |
|---|---|
Use Scenario: Used as synchronous rectifier or high-side switch in buck converter topologies operating from 3.3V–5V input rails. IC Role / Device Role / Timing Role: Dual-channel MOSFET provides independent control of upper/lower switches or parallel current paths. Use Value: Low RDS(ON) (4Ω @ 4.5V) reduces conduction loss; fast switching (tD(on) = 2.9ns) minimizes dead-time losses. | Use Scenario: Implements over-current and reverse-polarity protection in Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Functions as back-to-back configured load switch to block reverse current and enable/discharge control. Use Value: Matched dual-channel parameters ensure balanced voltage drop; AEC-Q101 qualification supports safety-critical deployment. |
| Solid-State Relay Replacement | Low-Voltage Peripheral Driver |
Use Scenario: Replaces electromechanical relays in industrial I/O modules controlling 12V solenoids and indicator lamps. IC Role / Device Role / Timing Role: Acts as compact, solid-state load switch with integrated gate protection and low drive requirements. Use Value: 0.24A continuous current and 25V rating support typical 12V/100mA loads; SOT363 footprint saves board space vs. SO-8. | Use Scenario: Drives LED displays, small DC motors, and memory write-enable lines in handheld test equipment. IC Role / Device Role / Timing Role: Provides logic-level compatible switching for low-power peripherals with minimal gate charge (Qg = 0.36nC). Use Value: Low input capacitance (27.9pF) and fast rise time (tr = 1.8ns) reduce driver loading and improve signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWK-7 | Higher V(BR)DSS (60V), higher RDS(ON) (12Ω @ 4.5V), same SOT363 package | Supports higher bus voltages but sacrifices conduction efficiency in 5V/3.3V systems | Select when 25V rating is insufficient and higher breakdown is required |
| SI2302DS-T1-GE3 | Single-channel, lower RDS(ON) (3.5Ω @ 4.5V), same V(BR)DSS (20V), SOT-23 package | Requires two devices for dual functionality; smaller footprint per channel but no shared source | Select when discrete channel isolation is preferred over integrated dual topology |
Compared with DMN601DWK-7 and SI2302DS-T1-GE3, the DMG6301UDW-7 uniquely balances 25V rating, ultra-low gate threshold, and true dual-channel integration in SOT363-making it optimal for compact, low-voltage, high-reliability switching where gate drive simplicity and space savings are critical.
Availability
DMG6301UDW-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and solid-state relay replacements requiring stable component supply and long-term production continuity.
Supply support for DMG6301UDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.
The DMG6301UDW-7 belongs to Diodes' "PowerMOS" product line, engineered specifically for low-voltage, high-efficiency switching in space-constrained portable and automotive electronics where gate drive simplicity and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
At TA = +70°C and VGS = 4.5V, the continuous drain current per channel is 0.19A. This derating reflects thermal limits under standard FR-4 PCB conditions with 2oz copper and 1-inch square pad layout, as specified in Note 6 of the datasheet.
Is the SOT363 package lead-free and RoHS compliant?
Yes. The DMG6301UDW-7 uses matte tin plating over Alloy 42 leadframe and is fully RoHS compliant per EU Directive 2011/65/EU, with no intentionally added lead, halogen, or antimony compounds-certified as a "Green" device.
Can pins 1 and 4 be used independently, or are they internally connected?
Pins 1 (S1) and 4 (S2) are separate source terminals with no internal connection. The internal schematic shows independent S1–D1–G1 and S2–D2–G2 structures. They may be tied externally for common-source configurations but remain electrically isolated by default.
Does the device support 1.8V logic-level gate drive?
No. While VGS(th) minimum is 0.65V, RDS(ON) is not characterized below VGS = 2.7V. At 1.8V, the device operates in weak inversion with unpredictable on-resistance and high dynamic losses-designs must use ≥2.7V gate drive for specified performance.
DMG6301UDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27.9pF @ 10V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMG6301UDW-7 FAQ
1.How can I place an order for DMG6301UDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6301UDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6301UDW-7 reliable?
The price and inventory of DMG6301UDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6301UDW-7 is usually 5 days.
3.What payment methods are accepted for DMG6301UDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6301UDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6301UDW-7?
DMG6301UDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6301UDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6301UDW-7?
For technical support, including DMG6301UDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6301UDW-7 requirements.
6.How does Aetrix verify that DMG6301UDW-7 is sourced from the original manufacturer or authorized distributors?
All DMG6301UDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6301UDW-7 meets industry standards.
7.What is the process for return or replacement of DMG6301UDW-7?
All DMG6301UDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6301UDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6301UDW-7 part is unused and in its original packaging.
Return procedure for DMG6301UDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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