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Diodes Incorporated DMG6301UDW-7

Part No.:
DMG6301UDW-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMG6301UDW-7.pdf
Description:
MOSFET 2N-CH 25V 0.24A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,990

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Product details

Overview

DMG6301UDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 25V V(BR)DSS, 4Ω RDS(ON) @ VGS = 4.5V, and 0.24A continuous drain current at +25°C. It integrates two independent gate-protected channels for compact power switching in space-constrained DC-DC converters and battery-operated systems.

For engineers reviewing the DMG6301UDW-7 datasheet, DMG6301UDW-7 pinout, DMG6301UDW-7 application, or DMG6301UDW-7 equivalent, key selection criteria include low gate threshold (0.65–1.5V), ESD-protected gate (>6kV HBM), fast switching (tD(on) = 2.9ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET uses planar silicon process to achieve low RDS(ON) while maintaining low input capacitance (Ciss = 27.9pF) and fast turn-on/turn-off timing. Its symmetric dual-die structure supports independent channel control with matched threshold voltage (VGS(th) typ. 0.85V) and on-resistance characteristics across temperature.

The device operates with gate drive voltages as low as 2.7V, enabling direct interface with 3.3V logic and microcontrollers. Thermal resistance RΘJA is 334°C/W under optimized 2oz copper pad layout, supporting stable operation up to +150°C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS25V - Maximum drain-source blocking voltage before avalanche conduction begins
RDS(ON)4Ω @ VGS = 4.5V, ID = 0.4A - On-resistance determines conduction loss in high-efficiency power stages
ID (continuous)0.24A @ TA = +25°C, VGS = 4.5V - Continuous current capability under standard PCB thermal conditions
VGS(th)0.65–1.5V - Gate threshold range ensures reliable turn-on with 3.3V logic-level drivers
Ciss27.9pF - Input capacitance directly impacts gate drive power and switching speed
ESD Rating>6kV HBM - Integrated gate protection eliminates need for external ESD diodes in layout
PD (max)0.37W - Power dissipation limit under 2oz copper pad layout defines thermal headroom

Pinout & Package

Package: SOT363 - 6-pin ultra-small surface-mount package with 0.65mm pitch, 2.2mm × 1.35mm footprint, and 0.95mm max height. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Pin/TerminalCircuit RoleDesign Meaning
1 (S1)Source of Channel 1Low-side return path for first MOSFET; internally connected to pin 4 (S2) in common-source configuration
2 (G1)Gate of Channel 1Control terminal for first channel; ESD-protected with >6kV HBM rating
3 (D1)Drain of Channel 1High-side switching node for first channel; rated for 25V breakdown
4 (S2)Source of Channel 2Low-side return path for second MOSFET; tied to pin 1 for dual-source configuration
5 (G2)Gate of Channel 2Independent control terminal for second channel; identical ESD protection as G1
6 (D2)Drain of Channel 2High-side switching node for second channel; electrically isolated from D1

Key Features

FeatureDesign Value
Low gate threshold voltage0.65–1.5V VGS(th) enables direct drive from 3.3V microcontrollers without level-shifting
Integrated gate ESD protection>6kV Human Body Model rating eliminates need for external TVS on gate traces
Matched dual-channel performancePaired RDS(ON) and VGS(th) across channels simplifies design of symmetrical load switches
AEC-Q101 qualifiedQualified for automotive applications requiring extended temperature (-55°C to +150°C) and reliability validation

Applications

DC-DC Converter Switching StageBattery Protection Circuit

Use Scenario: Used as synchronous rectifier or high-side switch in buck converter topologies operating from 3.3V–5V input rails.

IC Role / Device Role / Timing Role: Dual-channel MOSFET provides independent control of upper/lower switches or parallel current paths.

Use Value: Low RDS(ON) (4Ω @ 4.5V) reduces conduction loss; fast switching (tD(on) = 2.9ns) minimizes dead-time losses.

Use Scenario: Implements over-current and reverse-polarity protection in Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Functions as back-to-back configured load switch to block reverse current and enable/discharge control.

Use Value: Matched dual-channel parameters ensure balanced voltage drop; AEC-Q101 qualification supports safety-critical deployment.

Solid-State Relay ReplacementLow-Voltage Peripheral Driver

Use Scenario: Replaces electromechanical relays in industrial I/O modules controlling 12V solenoids and indicator lamps.

IC Role / Device Role / Timing Role: Acts as compact, solid-state load switch with integrated gate protection and low drive requirements.

Use Value: 0.24A continuous current and 25V rating support typical 12V/100mA loads; SOT363 footprint saves board space vs. SO-8.

Use Scenario: Drives LED displays, small DC motors, and memory write-enable lines in handheld test equipment.

IC Role / Device Role / Timing Role: Provides logic-level compatible switching for low-power peripherals with minimal gate charge (Qg = 0.36nC).

Use Value: Low input capacitance (27.9pF) and fast rise time (tr = 1.8ns) reduce driver loading and improve signal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN601DWK-7Higher V(BR)DSS (60V), higher RDS(ON) (12Ω @ 4.5V), same SOT363 packageSupports higher bus voltages but sacrifices conduction efficiency in 5V/3.3V systemsSelect when 25V rating is insufficient and higher breakdown is required
SI2302DS-T1-GE3Single-channel, lower RDS(ON) (3.5Ω @ 4.5V), same V(BR)DSS (20V), SOT-23 packageRequires two devices for dual functionality; smaller footprint per channel but no shared sourceSelect when discrete channel isolation is preferred over integrated dual topology

Compared with DMN601DWK-7 and SI2302DS-T1-GE3, the DMG6301UDW-7 uniquely balances 25V rating, ultra-low gate threshold, and true dual-channel integration in SOT363-making it optimal for compact, low-voltage, high-reliability switching where gate drive simplicity and space savings are critical.

Availability

DMG6301UDW-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and solid-state relay replacements requiring stable component supply and long-term production continuity.

Supply support for DMG6301UDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DMG6301UDW-7 belongs to Diodes' "PowerMOS" product line, engineered specifically for low-voltage, high-efficiency switching in space-constrained portable and automotive electronics where gate drive simplicity and thermal robustness are essential.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C and VGS = 4.5V, the continuous drain current per channel is 0.19A. This derating reflects thermal limits under standard FR-4 PCB conditions with 2oz copper and 1-inch square pad layout, as specified in Note 6 of the datasheet.

Is the SOT363 package lead-free and RoHS compliant?

Yes. The DMG6301UDW-7 uses matte tin plating over Alloy 42 leadframe and is fully RoHS compliant per EU Directive 2011/65/EU, with no intentionally added lead, halogen, or antimony compounds-certified as a "Green" device.

Can pins 1 and 4 be used independently, or are they internally connected?

Pins 1 (S1) and 4 (S2) are separate source terminals with no internal connection. The internal schematic shows independent S1–D1–G1 and S2–D2–G2 structures. They may be tied externally for common-source configurations but remain electrically isolated by default.

Does the device support 1.8V logic-level gate drive?

No. While VGS(th) minimum is 0.65V, RDS(ON) is not characterized below VGS = 2.7V. At 1.8V, the device operates in weak inversion with unpredictable on-resistance and high dynamic losses-designs must use ≥2.7V gate drive for specified performance.

DMG6301UDW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
240mA
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
27.9pF @ 10V
Power - Max:
300mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMG6301UDW-7 FAQ

1.How can I place an order for DMG6301UDW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG6301UDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG6301UDW-7 reliable?

The price and inventory of DMG6301UDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6301UDW-7 is usually 5 days.

3.What payment methods are accepted for DMG6301UDW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6301UDW-7 transactions.

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DMG6301UDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG6301UDW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG6301UDW-7?

For technical support, including DMG6301UDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6301UDW-7 requirements.

6.How does Aetrix verify that DMG6301UDW-7 is sourced from the original manufacturer or authorized distributors?

All DMG6301UDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6301UDW-7 meets industry standards.

7.What is the process for return or replacement of DMG6301UDW-7?

All DMG6301UDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6301UDW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG6301UDW-7 part is unused and in its original packaging.

Return procedure for DMG6301UDW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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