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Diodes Incorporated DMG6302UDW-13
- Part No.:
- DMG6302UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMG6302UDW-13.pdf
- Description:
- MOSFET 2P-CH 25V 0.15A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:4,922
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Product details
Overview
DMG6302UDW-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT363 package, rated for -25V VDSS, 10Ω RDS(ON) @ VGS = -4.5V, and -150mA ID at TA = +25°C. It delivers low gate threshold (-0.65 to -1.5V), fast switching (tF = 7.9ns), and ESD protection for compact power management switches in portable electronics.
For engineers reviewing the DMG6302UDW-13 datasheet, DMG6302UDW-13 pinout, DMG6302UDW-13 application, or DMG6302UDW-13 equivalent, key selection criteria include dual-channel P-MOS topology, low-voltage gate drive compatibility (≤ -2.7V), thermal resistance (RθJA = 407°C/W on FR-4), and RoHS/Green compliance for space-constrained consumer and industrial PCBs.
Technical Context
This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing a common source configuration in a single SOT363 package. Its gate threshold voltage range (-0.65 to -1.5V) enables reliable turn-on with low-voltage logic controllers, while its 30.7pF Ciss and 0.34nC Qg support high-frequency switching up to several MHz.
The device operates across -55°C to +150°C junction temperature, with RDS(ON) increasing predictably with temperature (e.g., +1.8× at 125°C vs. 25°C at VGS = -4.5V). Its 5.9pF Coss and 1.5pF Crss minimize Miller effect during commutation, supporting clean turn-off in load-switch and battery-protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -25V - supports rail-to-rail operation in 3.3V/5V systems with margin against transient spikes |
| RDS(ON) | 10Ω @ VGS = -4.5V - enables ≤150mW conduction loss at 140mA, suitable for low-power load switching |
| ID max | -150mA @ TA = +25°C - defines maximum steady-state current per channel under standard PCB layout |
| VGS(TH) | -0.65 to -1.5V - ensures full enhancement with 1.8V–3.3V GPIO outputs without level-shifting |
| Ciss | 30.7pF @ VDS = -10V - determines gate drive strength requirement and switching speed ceiling |
| tF | 7.9ns - limits minimum pulse width and enables >10MHz PWM control in analog switch applications |
| PD | 310mW @ TA = +25°C on FR-4 - sets thermal derating envelope for continuous operation in unheatsinked layouts |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, dual-channel P-MOS package with exposed drain pad (pins 1/2/3 = CH1 G/S/D; pins 4/5/6 = CH2 G/S/D), 2.15mm × 2.10mm footprint, 0.3mm nominal height, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Channel 1 Gate | Control input for first P-MOS; requires negative bias relative to source to conduct |
| 2 | Channel 1 Source | Reference node for CH1; tied to higher potential (e.g., VIN) in high-side switch configuration |
| 3 | Channel 1 Drain | Output node for CH1; connects to load; internally bonded to exposed drain pad for thermal relief |
| 4 | Channel 2 Gate | Independent control input for second P-MOS; electrically isolated from CH1 gate |
| 5 | Channel 2 Source | Reference node for CH2; may be tied to CH1 source or separate rail depending on circuit topology |
| 6 | Channel 2 Drain | Output node for CH2; supports dual independent load switching or complementary drive schemes |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 13Ω @ VGS = -2.7V - enables direct interface with 2.7V microcontroller I/O without gate driver |
| ESD protection | HBM ≥2kV - eliminates need for external TVS diodes in handheld and wearables designs |
| Low input capacitance | Ciss = 30.7pF - reduces gate drive power and enables faster edge rates with minimal overshoot |
| Thermal performance | RθJA = 407°C/W (FR-4) - allows 150mA operation at ambient ≤60°C with standard 2-layer board |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant - meets IPC-1752A reporting and automotive Tier-1 requirements |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
|
Use Scenario: Dual-channel reverse-polarity and overcurrent protection for single-cell Li-ion battery packs in portable medical devices. IC Role / Device Role / Timing Role: Each channel acts as independent high-side load switch controlling charge/discharge paths; no timing function required. Use Value: 10Ω RDS(ON) limits voltage drop to <1.5mV at 150mA, preserving battery gauge accuracy and runtime. |
Use Scenario: Hot-swap power enable/disable for USB 2.0 peripheral ports in docking stations and embedded hosts. IC Role / Device Role / Timing Role: Dual P-MOS provides independent VBUS control per port; fast tF = 7.9ns prevents glitch-induced enumeration failures. Use Value: Low VGS(TH) ensures reliable turn-on with 3.3V USB controller GPIO, eliminating external level shifters. |
| IoT Sensor Node Power Gating | Industrial I/O Module Level Shifting |
|
Use Scenario: Selective power-down of BLE radio, accelerometer, and environmental sensors in battery-powered wireless nodes. IC Role / Device Role / Timing Role: Two independent channels gate power to sensor sub-systems; controlled by MCU GPIO with <100ns response. Use Value: 0.34nC Qg enables full turn-on in <1µs using standard 10mA GPIO, minimizing wake-up latency. |
Use Scenario: Bidirectional level translation between 5V PLC backplane and 3.3V microcontroller I/O in programmable logic controllers. IC Role / Device Role / Timing Role: Configured as dual active-low switches to isolate and translate control signals without direction pins. Use Value: Matched RDS(ON) between channels (<±5% variation) ensures symmetrical rise/fall times across translated signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWKQ-7 | Higher VDSS (-60V), higher RDS(ON) (25Ω @ -4.5V), same SOT363 package | Supports higher bus voltages but dissipates ~2.5× more conduction loss at 150mA | Select when system rails exceed 25V; avoid if efficiency or thermal budget is constrained at 3.3V operation |
| SI2301DS-T1-E3 | Lower VDSS (-20V), lower RDS(ON) (8.5Ω @ -4.5V), SOT-23-3 (single-channel) | Requires two discrete devices for dual function; lacks integrated dual topology and shared thermal path | Choose only when board area permits duplication and thermal isolation is preferred over co-packaged matching |
Compared with DMN601DWKQ-7 and SI2301DS-T1-E3, the DMG6302UDW-13 uniquely balances 25V rating, 10Ω RDS(ON), dual-channel integration, and ultra-low gate charge-making it optimal for space- and efficiency-sensitive 3.3V/5V portable systems where matched channel behavior and minimal BOM count are critical.
Availability
DMG6302UDW-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switching, IoT sensor node power gating, and industrial I/O module level shifting requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMG6302UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMG6302UDW belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage load switching in portable, wearable, and space-constrained industrial electronics.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The DMG6302UDW-13 supports -120mA continuous drain current per channel at TA = +70°C when VGS = -4.5V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT363 package on standard FR-4 PCBs without copper pour enhancement.
Can this device be used in a common-drain (source-follower) configuration?
Yes-the DMG6302UDW-13 supports source-follower operation with VGS biased negatively relative to the source. Its -1.5V maximum VGS(TH) ensures predictable turn-on, but output swing will be limited by VGS(TH) drop; typical VSD saturation is ≤0.8V at -200mA per the diode forward voltage curve.
Is the SOT363 package lead-free and RoHS-compliant?
Yes-DMG6302UDW-13 uses matte tin finish over alloy 42 leadframe, fully compliant with EU RoHS Directive 2015/863/EU (RoHS 3), with no intentionally added lead, halogen, or antimony. Moisture sensitivity is rated Level 1 per J-STD-020.
Does the device include body diode conduction capability?
Yes-each P-channel MOSFET includes an intrinsic body diode oriented anode-to-source, cathode-to-drain. The typical VSD is -0.8V at -200mA (TA = 25°C), enabling use in reverse-current blocking and synchronous rectification topologies where controlled forward conduction is required.
DMG6302UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 150mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 10Ohm @ 140mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30.7pF @ 10V
- Power - Max:
- 310mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMG6302UDW-13 FAQ
1.How can I place an order for DMG6302UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6302UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6302UDW-13 reliable?
The price and inventory of DMG6302UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6302UDW-13 is usually 5 days.
3.What payment methods are accepted for DMG6302UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6302UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6302UDW-13?
DMG6302UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6302UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6302UDW-13?
For technical support, including DMG6302UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6302UDW-13 requirements.
6.How does Aetrix verify that DMG6302UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMG6302UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6302UDW-13 meets industry standards.
7.What is the process for return or replacement of DMG6302UDW-13?
All DMG6302UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6302UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6302UDW-13 part is unused and in its original packaging.
Return procedure for DMG6302UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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