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Diodes Incorporated DMG6602SVTQ-7
- Part No.:
- DMG6602SVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMG6602SVTQ-7.pdf
- Description:
- MOSFET N/P-CH 30V 3.4A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:89,532
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Product details
Overview
DMG6602SVTQ-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 60mΩ @ 10V) and P-channel (-30V, 95mΩ @ -10V) device for half-bridge or level-shifting power stages. It delivers 3.4A/–2.8A continuous drain current at 25°C with low gate charge (9nC/7nC), fast switching (tD(on) = 3ns / 4.8ns), and AEC-Q101 qualification - used in automotive LED backlight drivers and synchronous buck converters.
For engineers reviewing the DMG6602SVTQ-7 datasheet, DMG6602SVTQ-7 pinout, DMG6602SVTQ-7 application, or DMG6602SVTQ-7 equivalent, key selection criteria include complementary RDS(on) matching, thermal resistance (RθJA = 102°C/W with 1-inch2 copper), TSOT26 footprint compatibility, and AEC-Q101 reliability for automotive power management designs.
Technical Context
This dual MOSFET implements complementary enhancement-mode operation with independent gate control: Q1 (N-ch) switches positive-side loads with VGS(th) = 1.0–2.3V; Q2 (P-ch) handles high-side or inverting functions with VGS(th) = –1.0 to –2.3V. Both devices share identical TSOT26 thermal layout and operate across –55°C to +150°C junction range.
Dynamic performance is optimized via low Ciss (290–420pF), low Crss (40–80pF), and matched gate drive requirements - enabling efficient 500kHz+ DC-DC conversion. The integrated body diodes (VSD = 0.8–1.0V) support synchronous rectification without external Schottky devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30V (N-ch) / –30V (P-ch): Supports 24V automotive rail and 12V industrial bus systems with 20% margin. |
| RDS(on) @ VGS = ±10V | 60mΩ / 95mΩ: Enables ≤0.6W conduction loss at 3.4A/–2.8A, critical for thermally constrained PCBs. |
| Qg @ VGS = ±10V | 9nC / 7nC: Reduces gate drive power and enables clean 3ns/4.8ns turn-on with standard 3Ω/6Ω driver resistors. |
| TJ Range | –55°C to +150°C: Qualified for under-hood automotive environments and industrial motor control ambient conditions. |
| RθJA (1″² Cu) | 102°C/W: Allows 1.27W continuous dissipation at +70°C ambient - sufficient for 1A–2A load currents in compact layouts. |
| AEC-Q101 Qualified | Validated for automotive electronics per stress test standards - eliminates need for additional qualification in Tier-1 BOMs. |
Pinout & Package
Package: TSOT26 - 6-pin, surface-mount, lead-free molded plastic case (UL 94V-0), 0.013g weight, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main current path for high-side N-MOSFET; connects to input rail in high-side switch or low-side of half-bridge. |
| 2 (S1) | N-channel source | Reference node for N-ch gate drive; ties to ground or switching node depending on topology. |
| 3 (G1) | N-channel gate | Control input for N-MOSFET; requires ≥2.3V threshold and <9nC charge for full enhancement. |
| 4 (D2) | P-channel drain | Main current path for P-MOSFET; used as output node in level shifters or high-side driver outputs. |
| 5 (S2) | P-channel source | Connects to VCC rail in high-side configuration; sets gate-source bias reference for P-ch turn-on. |
| 6 (G2) | P-channel gate | Inverted control input; driven low relative to S2 to enhance P-MOSFET (VGS ≤ –2.3V). |
Key Features
| Feature | Design Value |
|---|---|
| Complementary RDS(on) matching | 60mΩ (N) / 95mΩ (P) at ±10V enables balanced conduction loss in push-pull and H-bridge topologies. |
| Low Ciss + Crss | 290–420pF input capacitance and 40–80pF reverse transfer capacitance minimize Miller effect and improve EMI robustness. |
| Fast switching transitions | 3ns tD(on) (N) / 4.8ns tD(on) (P) supports >1MHz PWM frequency without excessive dead-time penalties. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, HTRB, and ESD (HBM ≥2kV) - reduces qualification overhead for ADAS and body control modules. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets EU ELV and RoHS 2 compliance mandates. |
Applications
| Automotive LED Backlight Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving 12V–24V LED strings in instrument clusters and center displays with PWM dimming. IC Role / Device Role / Timing Role: N-channel switches ground return path; P-channel controls high-side current sourcing in boost-buck hybrid stage. Use Value: Low RDS(on) minimizes heat in sealed display enclosures; AEC-Q101 ensures 15-year field reliability under thermal cycling. |
Use Scenario: 5V-to-3.3V point-of-load regulation in infotainment head units with 2A output. IC Role / Device Role / Timing Role: N-channel serves as synchronous rectifier; P-channel acts as active high-side switch with gate bootstrapped by charge pump. Use Value: 95mΩ P-ch RDS(on) cuts high-side conduction loss by 35% vs. discrete P-MOSFET solutions; fast tf = 3ns/13ns prevents shoot-through. |
| USB-C Power Delivery Gate Driver | Industrial Motor Control Half-Bridge |
|
Use Scenario: Level-shifting logic between 3.3V MCU GPIO and 20V PD sink/source FET gates. IC Role / Device Role / Timing Role: Complementary pair translates low-voltage control signals to bidirectional 20V gate drive with minimal propagation delay. Use Value: Matched VGS(th) (±1.0–2.3V) ensures precise turn-on timing; low Qg enables direct MCU drive without buffer stages. |
Use Scenario: 24V BLDC motor commutation in HVAC blowers and power tools with 1.5A phase current. IC Role / Device Role / Timing Role: N-channel drives low-side leg; P-channel replaces bootstrap circuitry for high-side drive in 3-phase inverter half-bridges. Use Value: Eliminates external bootstrap diode/capacitor; TSOT26 footprint saves >30% board area vs. dual-SOT23 solution while maintaining thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFG-7 | Single N-channel only (60V, 16mΩ); no integrated P-ch device - requires external P-MOSFET. | Lacks complementary integration; suitable only where high-side drive uses separate IC or discrete solution. | Select when higher VDS rating (60V) is required and board space allows dual discrete placement. |
| SI6926ADQ-T1-GE3 | Complementary pair in SO-8 (not TSOT26); RDS(on) = 42mΩ/65mΩ @ ±10V; higher Qg (12nC/10nC). | SO-8 thermal performance superior (RθJA ≈ 62°C/W), but 3× larger footprint limits portable designs. | Prefer for industrial applications needing >2W continuous dissipation and less stringent size constraints. |
Compared with DMN6016LFG-7 and SI6926ADQ-T1-GE3, DMG6602SVTQ-7 uniquely balances TSOT26 miniaturization, AEC-Q101 compliance, and matched complementary RDS(on) - making it optimal for space-constrained automotive and USB-C PD subsystems where integration and qualification reduce BOM count and validation time.
Availability
DMG6602SVTQ-7 is available at Aetrix Electronics and suitable for automotive LED backlighting, synchronous buck converters, and USB-C power delivery gate drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMG6602SVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.
The DMG6602SVTQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive power stages requiring integrated complementary switching capability.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
At TA = +70°C, the N-channel (Q1) supports 2.7A continuous drain current with VGS = 10V, and the P-channel (Q2) supports –2.4A with VGS = –10V. These values reflect thermal derating based on 0.52W power dissipation limit and 155°C/W junction-to-ambient resistance on standard FR-4 board.
Can DMG6602SVTQ-7 be used in a high-side P-channel switch configuration without a gate driver?
No - the P-channel requires VGS ≤ –2.3V to fully enhance, meaning its gate must be driven below the source potential. With source tied to 24V, the gate needs ≤21.7V, which cannot be achieved directly from a 3.3V or 5V MCU. A dedicated high-side driver or charge-pump circuit is required for reliable operation.
Is the TSOT26 package compatible with standard reflow profiles for lead-free soldering?
Yes - the TSOT26 package uses matte tin annealed terminals and is rated for peak reflow temperatures up to 260°C per JEDEC J-STD-020. Its moisture sensitivity level 1 means floor life is unlimited, eliminating bake requirements before assembly.
How does the body diode forward voltage impact synchronous rectification efficiency?
The N-channel body diode has VSD = 0.8–1.0V at 1A, and the P-channel body diode has VSD = –0.8 to –1.0V. In synchronous rectification, these diodes conduct only during dead-time; their low VSD reduces reverse recovery losses and improves light-load efficiency versus Schottky alternatives with higher leakage.
DMG6602SVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400pF @ 15V
- Power - Max:
- 840mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMG6602SVTQ-7 FAQ
1.How can I place an order for DMG6602SVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6602SVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6602SVTQ-7 reliable?
The price and inventory of DMG6602SVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6602SVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMG6602SVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6602SVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6602SVTQ-7?
DMG6602SVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6602SVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6602SVTQ-7?
For technical support, including DMG6602SVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6602SVTQ-7 requirements.
6.How does Aetrix verify that DMG6602SVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMG6602SVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6602SVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMG6602SVTQ-7?
All DMG6602SVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6602SVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6602SVTQ-7 part is unused and in its original packaging.
Return procedure for DMG6602SVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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