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Diodes Incorporated DMG6602SVTX-7
- Part No.:
- DMG6602SVTX-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMG6602SVTX-7.pdf
- Description:
- MOSFET N/P-CH 30V 3.4A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:3,468
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Product details
Overview
DMG6602SVTX-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating one 30V N-channel (Q1) and one −30V P-channel (Q2) MOSFET. It delivers RDS(on) of 60 mΩ @ VGS = 10 V (Q1) and 95 mΩ @ VGS = −10 V (Q2), with continuous drain currents of 3.4 A and −2.8 A respectively at TA = +25°C - optimized for synchronous buck converters and dual-rail power management in space-constrained DC-DC modules.
For engineers reviewing the DMG6602SVTX-7 datasheet, DMG6602SVTX-7 pinout, DMG6602SVTX-7 application, or DMG6602SVTX-7 equivalent, key selection criteria include verified complementary channel matching, low gate charge (Qg = 9 nC / 7 nC), thermal resistance (RθJA = 102 °C/W), AEC-Q101 qualification, and TSOT26 footprint compatibility with high-density PCB layouts.
Technical Context
This dual-MOSFET device implements matched N+P topology to enable efficient half-bridge and synchronous rectifier operation without external pairing. Its gate threshold voltages are tightly specified (VGS(th) = 1.0–2.3 V for Q1; −1.0 to −2.3 V for Q2), ensuring predictable turn-on sequencing under 3.3 V and 5 V logic drive.
Thermal performance is defined for two mounting conditions: 0.84 W PD on minimal FR-4 pad layout (RθJA = 155 °C/W), and 1.27 W PD with 1-inch² copper pour (RθJA = 102 °C/W). Dynamic parameters - including Ciss (290–400 pF / 350–420 pF), Qgd (1.5 nC / 1.2 nC), and tf/tr (3–5 ns / 7.3–13 ns) - support >1 MHz switching in compact power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V (Q1), −30 V (Q2): Supports 24 V input rails with 20 % margin against transients in industrial DC-DC converters. |
| RDS(on) | 60 mΩ @ 10 V (Q1), 95 mΩ @ −10 V (Q2): Enables <0.2 W conduction loss at 2.5 A load in synchronous buck topologies. |
| ID (continuous) | 3.4 A (Q1), −2.8 A (Q2) at 25°C: Sustains typical output current of 2–3 A point-of-load regulators without derating. |
| Qg | 9 nC (Q1 @ 10 V), 7 nC (Q2 @ −10 V): Reduces gate drive power and enables direct MCU GPIO control without buffer amplification. |
| Ciss | 290–400 pF (Q1), 350–420 pF (Q2): Limits Miller-induced shoot-through risk and supports stable PWM timing at 500 kHz–2 MHz. |
| TJ range | −55°C to +150°C: Validated for under-hood automotive and industrial ambient environments per AEC-Q101 stress testing. |
| Package | TSOT26: 2.9 mm × 2.8 mm × 0.9 mm footprint with exposed thermal pad; compatible with standard reflow profiles and AOI inspection. |
Pinout & Package
TSOT26 package with 6-pin leadframe, matte tin-plated terminals, and UL 94V-0 green molding compound. Moisture sensitivity level 1 (J-STD-020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main current path for high-side switch; connects to input rail in buck configuration. |
| S1 | N-channel source | Reference node for Q1 gate drive; tied to switch node in half-bridge layouts. |
| G1 | N-channel gate | Control input for Q1; requires ≥10 V for full enhancement and low RDS(on). |
| D2 | P-channel drain | Connected to switch node; conducts during low-side conduction phase in synchronous rectification. |
| S2 | P-channel source | Connects to output rail or ground return; defines reference for Q2 gate biasing. |
| G2 | P-channel gate | Driven negative relative to S2; −10 V ensures minimum RDS(on) and fast turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pairing | Matched VGS(th) and RDS(on) tracking across temperature ensures balanced dead-time behavior and reduced shoot-through risk. |
| Low gate charge asymmetry | Qg(Q1)/Qg(Q2) ratio of ~1.3:1 enables symmetrical gate driver design with single-supply controllers. |
| Enhanced thermal dissipation | RθJC = 34 °C/W allows >1 W junction-to-case power transfer when soldered to internal copper layers or thermal vias. |
| AEC-Q101 qualified | Stress-tested for automotive-grade reliability: HTGB, HTRB, TC, UHAST, and ESD (HBM 2 kV, CDM 1 kV). |
| Halogen- and antimony-free | <900 ppm Br/Cl total, <1000 ppm Sb; meets RoHS 3 (2015/863/EU) and JEDEC J-STD-020 MSL-1 requirements. |
Applications
| Backlight LED Driver | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Driving white LED strings in automotive center-stack displays using boost + linear dimming architecture. IC Role / Device Role / Timing Role: Q1 acts as main boost switch; Q2 serves as synchronous rectifier to replace Schottky diode and reduce conduction loss by 40 %. Use Value: Achieves >92 % efficiency at 1.2 A output while maintaining thermal rise <25°C on 2-layer board with no heatsink. |
Use Scenario: Dual-phase 20 V/3 A USB PD 3.0 buck converter in portable docking stations. IC Role / Device Role / Timing Role: Each DMG6602SVTX-7 forms one phase's high/low-side switch pair; synchronized via interleaved PWM signals. Use Value: Enables 500 kHz operation with <15 ns propagation delay mismatch between channels, minimizing ripple and EMI. |
| Industrial PLC I/O Module | Smartphone Fast-Charging Circuit |
|
Use Scenario: 24 V DC input protection and reverse-polarity safeguard in programmable logic controller field I/O cards. IC Role / Device Role / Timing Role: Q2 configured as ideal reverse-polarity protector; Q1 used for hot-swap inrush limiting. Use Value: Eliminates need for discrete P-FET + N-FET + gate driver IC, reducing BOM count by 4 components per channel. |
Use Scenario: Dual-voltage battery charging path (5 V / 9 V) with automatic voltage selection and load switching. IC Role / Device Role / Timing Role: Q1 controls 5 V path; Q2 controls 9 V path; both driven by PMIC's dedicated charge-path GPIOs. Use Value: Supports <10 µs transition time between paths with <50 mV voltage glitch, meeting USB PD 3.0 dynamic negotiation specs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3071LVT | Higher RDS(on): 85 mΩ / 120 mΩ @ ±10 V; lower Qg (6.5 nC / 5.2 nC); same TSOT26 package. | Better suited for lower-frequency (<300 kHz), higher-current (>4 A) applications where gate drive loss dominates. | Select DMC3071LVT when prioritizing gate drive efficiency over conduction loss in thermally limited enclosures. |
| SI6926ADQ-T1-GE3 | Asymmetric package (SO-8); higher RDS(on) (70 mΩ / 110 mΩ); rated for 100% avalanche energy (EAS = 35 mJ). | Preferred in industrial motor drivers requiring ruggedness against inductive switching stress. | Choose SI6926ADQ-T1-GE3 only if system-level surge testing mandates avalanche-rated devices and SO-8 layout is acceptable. |
Compared with DMC3071LVT and SI6926ADQ-T1-GE3, DMG6602SVTX-7 offers the lowest combined RDS(on) × Qg figure-of-merit (3.6 Ω·nC) in TSOT26, making it optimal for high-frequency, space-constrained DC-DC designs where thermal headroom is limited.
Availability
DMG6602SVTX-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, automotive display backlight drivers, and industrial PLC I/O protection circuits requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.
Supply support for DMG6602SVTX-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.
DMG6602SVTX-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive infotainment, ADAS subsystems, and industrial power management.
FAQ
Is DMG6602SVTX-7 pin-compatible with DMG6602SVT?
Yes - DMG6602SVTX-7 and DMG6602SVT share identical TSOT26 pinout, electrical specifications, and thermal characteristics. The "X" suffix denotes tape-and-reel packaging per Aetrix's internal logistics coding; no functional or mechanical differences exist between the two part numbers.
What is the maximum safe operating frequency for DMG6602SVTX-7 in a synchronous buck converter?
Based on measured tr/tf (5 ns / 7.3 ns) and Qgd (1.5 nC / 1.2 nC), DMG6602SVTX-7 supports stable operation up to 2 MHz with proper gate drive strength (≤3 Ω series resistance) and layout-controlled parasitic inductance (<0.5 nH per loop).
Does DMG6602SVTX-7 require negative gate drive for the P-channel MOSFET (Q2)?
No - Q2 operates in enhancement mode and turns on when VGS is negative relative to its source. In typical buck configurations, Q2's source connects to the switch node; driving G2 to ground (0 V) while S2 rises to VIN yields sufficient VGS ≈ −VIN for conduction without external negative supply.
Can DMG6602SVTX-7 be used in linear regulator applications?
No - its RDS(on) and thermal resistance (RθJA = 102 °C/W) are optimized for switching operation. In linear mode, power dissipation exceeds 0.5 W above 1 A, causing junction temperatures to exceed 150°C even with moderate copper area, violating safe operating area limits shown in Fig. 11 and Fig. 22.
DMG6602SVTX-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 10V, 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400pF @ 15V, 420pF @ 15V
- Power - Max:
- 840mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMG6602SVTX-7 FAQ
1.How can I place an order for DMG6602SVTX-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6602SVTX-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6602SVTX-7 reliable?
The price and inventory of DMG6602SVTX-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6602SVTX-7 is usually 5 days.
3.What payment methods are accepted for DMG6602SVTX-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6602SVTX-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6602SVTX-7?
DMG6602SVTX-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6602SVTX-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6602SVTX-7?
For technical support, including DMG6602SVTX-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6602SVTX-7 requirements.
6.How does Aetrix verify that DMG6602SVTX-7 is sourced from the original manufacturer or authorized distributors?
All DMG6602SVTX-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6602SVTX-7 meets industry standards.
7.What is the process for return or replacement of DMG6602SVTX-7?
All DMG6602SVTX-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6602SVTX-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6602SVTX-7 part is unused and in its original packaging.
Return procedure for DMG6602SVTX-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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