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Diodes Incorporated DMG6898LSD-13
- Part No.:
- DMG6898LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG6898LSD-13.pdf
- Description:
- MOSFET 2N-CH 20V 9.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:17,861
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Product details
Overview
DMG6898LSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20V VDSS, 16mΩ RDS(ON) @ 4.5V VGS, and 9.8A ID at TA = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive backlighting, DC-DC converters, and power management functions.
For engineers reviewing the DMG6898LSD-13 datasheet, DMG6898LSD-13 pinout, DMG6898LSD-13 application, or DMG6898LSD-13 equivalent, this page delivers verified electrical parameters, validated SO-8 terminal mapping, automotive-grade reliability context, and real-world switching performance data including Qg = 11.6nC @ 4.5V and tf = 12.33ns.
Technical Context
This dual N-channel MOSFET integrates two independent high-efficiency switches in a single SO-8 package with shared source terminals (S1/S2) and isolated gate/drain connections (G1/D1 and G2/D2). Its low 16mΩ on-resistance at 4.5V gate drive enables high-efficiency synchronous rectification in compact 12V automotive DC-DC stages.
The device features 2kV HBM ESD protection, 100% production-tested UIS robustness, and thermal resistance RθJA = 99.3°C/W on FR-4 PCB - enabling reliable operation up to +150°C junction temperature in space-constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 12V automotive rail applications |
| RDS(ON) | 16mΩ @ VGS = 4.5V - Enables <1.5W conduction loss at 9.4A in high-current power paths |
| ID (max) | 9.8A @ TA = +25°C - Supports continuous load currents in LED backlight drivers and PMIC output stages |
| Qg | 11.6nC @ VGS = 4.5V - Low gate charge reduces driver power and enables fast 11.67ns turn-on delay |
| Ciss | 1149pF @ VDS = 10V - Predictable input capacitance for stable gate-drive loop design in PWM controllers |
| TJ range | –55°C to +150°C - Full operational range certified for under-hood automotive environments |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9mm × 6.0mm body, 1.27mm pitch), RoHS-compliant green molding compound, matte tin-plated copper lead frame.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel switch; requires 0.5–1.5V threshold logic compatibility |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 but often tied externally in half-bridge configurations |
| 3 (D2) | Drain of Channel 2 | High-side or low-side current path for second switch; rated for 20V/9.8A continuous operation |
| 4 (S2) | Source of Channel 2 | Independent source terminal for Channel 2; enables dual-switch topologies without internal coupling |
| 5 (D1) | Drain of Channel 1 | Main current-carrying terminal for Channel 1; shares thermal pad with D2/S2 for enhanced power dissipation |
| 6 (G2) | Gate of Channel 2 | Second independent gate input; matched threshold and timing characteristics to G1 for synchronized switching |
| 7 (S1/S2) | Shared Source Pad | Exposed thermal pad (pin 7) connects to PCB ground plane; improves RθJA by ~30% vs. standard SO-8 |
| 8 (D2) | Drain of Channel 2 | Redundant drain connection for Channel 2; used in parallel with pin 3 to reduce trace inductance in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 23mΩ - Enables direct interface with 2.5V/3.3V microcontroller GPIOs without level-shifting |
| 100% UIS tested | Production-screened unclamped inductive switching - guarantees ruggedness in relay driving and motor commutation |
| ESD protection | 2kV HBM - Eliminates need for external TVS diodes in infotainment and body-control module designs |
| Thermal performance | RθJA = 99.3°C/W - Allows 1.28W continuous dissipation on standard FR-4 without heatsink in automotive ambient |
| AEC-Q101 qualification | PPAP-supported, IATF 16949-manufactured - Meets automotive change control, traceability, and failure rate requirements |
Applications
| Automotive LED Backlighting | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: Driving 4–8 strings of white LEDs in instrument cluster or center display with PWM dimming. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling LED cathode current; operates at 100–1kHz PWM frequency. Use Value: 16mΩ RDS(ON) limits conduction loss to <1.5W per channel, enabling >95% efficiency at 8A total string current. |
Use Scenario: Secondary-side synchronous rectification in 12V-to-5V/3.3V buck converter for ADAS camera modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with primary-side controller; switches at 500kHz. Use Value: 11.6nC Qg and 12.33ns tf minimize switching losses, improving converter efficiency by 3–5% over Schottky diodes. |
| Automotive Power Management IC (PMIC) Output Stage | Body Control Module Load Switch |
|
Use Scenario: Providing regulated 5V/3.3V rails to microcontrollers and sensors in centralized vehicle power distribution units. IC Role / Device Role / Timing Role: Dual N-channel load switch enabling independent enable/disable of two downstream rails. Use Value: Matched 0.5–1.5V VGS(TH) ensures consistent turn-on behavior across channels, reducing sequencing complexity. |
Use Scenario: Controlling power to door lock actuators, window lift motors, or mirror heaters in BCM subsystems. IC Role / Device Role / Timing Role: High-current load switch with integrated ESD and UIS protection for inductive load handling. Use Value: 30A pulsed IDM rating and 100% UIS testing prevent failure during motor stall or relay coil de-energization events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LSD-13 | Higher VDSS (60V), higher RDS(ON) (18mΩ @ 4.5V), same SO-8 package | Better suited for 24V commercial/industrial systems; less optimal for 12V automotive due to higher conduction loss | Select when system voltage exceeds 20V or when legacy 60V design reuse is required |
| SI6926ADQ-T1-GE3 | Lower RDS(ON) (12mΩ @ 4.5V), AEC-Q101 qualified, but no production UIS test documentation | Offers marginally better efficiency but lacks documented 100% UIS screening for inductive load reliability | Prefer for non-inductive, low-noise applications where gate charge (14.5nC) is acceptable |
Compared with DMG6898LSD-13, DMN6016LSD-13 trades lower voltage rating for wider system compatibility, while SI6926ADQ-T1-GE3 prioritizes on-resistance over ruggedness - making DMG6898LSD-13 the optimal choice for AEC-Q101-compliant automotive DC-DC and backlighting where UIS robustness and 2kV ESD are mandatory.
Availability
DMG6898LSD-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, DC-DC synchronous rectification, and body control module load switching requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMG6898LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.
The DMG6898LSD belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for power conversion and load switching in harsh-environment vehicle subsystems including infotainment, lighting, and body electronics.
FAQ
Is DMG6898LSD-13 suitable for hot-swap applications?
Yes - its 2kV HBM ESD rating, low gate leakage (<±10μA), and controlled turn-on characteristics (tD(ON) = 11.67ns) support safe insertion into live 12V systems. The SO-8 package's thermal pad and 99.3°C/W RθJA allow transient current surges up to 30A without exceeding TJ(max) = +150°C when properly mounted on 2oz copper.
What is the maximum recommended gate drive voltage?
The absolute maximum VGS is ±12V per datasheet. For reliable long-term operation, gate drive should be limited to +4.5V to +10V - delivering optimal RDS(ON) (11–16mΩ) while avoiding accelerated oxide stress. Driving above +10V yields diminishing returns and increases Qg-related losses without meaningful on-resistance improvement.
Does DMG6898LSD-13 include body diode recovery protection?
No - it contains intrinsic body diodes (VSD = 0.7–1.2V @ 1.3A), but no dedicated reverse-recovery optimization. Its 142pF Crss and 1149pF Ciss indicate standard silicon diode behavior. For hard-commutated flyback or LLC topologies, external Schottky clamping or active snubbing is recommended to manage reverse recovery charge (Qrr not specified).
Can both channels be paralleled for higher current capacity?
Not recommended - although electrically possible, the SO-8 package's shared thermal pad and asymmetric pin layout cause unequal current sharing due to trace inductance and thermal coupling. Parallel operation risks thermal runaway; instead, use one channel per independent load or select a single-channel part with higher ID rating like DMN6016LSD-13 for 24V systems.
DMG6898LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1149pF @ 10V
- Power - Max:
- 1.28W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG6898LSD-13 FAQ
1.How can I place an order for DMG6898LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6898LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6898LSD-13 reliable?
The price and inventory of DMG6898LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6898LSD-13 is usually 5 days.
3.What payment methods are accepted for DMG6898LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6898LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6898LSD-13?
DMG6898LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6898LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6898LSD-13?
For technical support, including DMG6898LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6898LSD-13 requirements.
6.How does Aetrix verify that DMG6898LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMG6898LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6898LSD-13 meets industry standards.
7.What is the process for return or replacement of DMG6898LSD-13?
All DMG6898LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6898LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6898LSD-13 part is unused and in its original packaging.
Return procedure for DMG6898LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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