Diodes Incorporated DMG6968UTS-13

Overview

DMG6968UTS-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSSOP-8 package, rated for 20 V V_DSS, 5.2 A continuous drain current at 25°C, and 18 mΩ R_DS(on) at V_GS = 4.5 V. It features low input capacitance (C_iss = 143 pF), fast switching (t_D(on) = 53 ns), and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMG6968UTS-13 datasheet, DMG6968UTS-13 pinout, DMG6968UTS-13 application, or DMG6968UTS-13 equivalent, key selection criteria include dual-channel on-resistance matching, thermal resistance (R_θJA = 125 °C/W), gate charge (Q_g = 8.8 nC), and ESD protection up to 2 kV - all critical for high-density DC-DC converter and load-switch designs.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single TSSOP-8 package with shared drain terminal (pin 5) and independent source/gate connections. Its low threshold voltage range (0.35–0.95 V) enables direct drive from 1.8 V and 2.5 V logic, while the 20 V rating supports 12 V rail switching and USB PD auxiliary power paths.

The device employs trench-gate process technology to achieve low R_DS(on) and reduced gate charge without compromising switching loss trade-offs. Thermal performance is optimized for FR-4 PCB mounting, with junction-to-ambient resistance of 125 °C/W and safe operating area validated up to 30 A pulsed drain current.

Key Specifications

Pinout & Package

Package: TSSOP-8, surface-mount, lead-free/RoHS-compliant, moisture sensitivity level 1 per J-STD-020, weight ≈ 0.039 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN6016LSD-13 and SI6968DQ-T1-GE3, the DMG6968UTS-13 uniquely delivers integrated dual-channel functionality with automotive-grade reliability and low-voltage drive capability - making it optimal for space-limited, high-reliability 12 V power switching where matched performance and qualification matter.

Availability

DMG6968UTS-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery subsystems, and industrial PLC I/O expansion requiring stable component supply and long-term lifecycle support.

Supply support for DMG6968UTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMG6968UTS belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial power switching applications demanding high reliability, low R_DS(on), and compact packaging.

FAQ

What is the maximum continuous drain current for DMG6968UTS-13 at 70°C ambient?

The maximum continuous drain current is 3.5 A at T_A = 70°C, derated from 5.2 A at 25°C due to thermal limits. This value assumes mounting on a standard FR-4 PCB per Note 4 in the datasheet and accounts for junction temperature rise governed by R_θJA = 125 °C/W. Operation above this current requires enhanced thermal management or pulse-duty cycling.

Can DMG6968UTS-13 be used in a back-to-back configuration for USB-C reverse-current blocking?

Yes - its common-drain (pin 5) architecture and matched dual N-channel structure allow direct implementation of back-to-back switching for bidirectional blocking. When configured with external gate resistors and proper bootstrap timing, it meets USB-C PD 3.0 requirements for V_BUS isolation up to 20 V and 3 A, with verified 2 kV HBM ESD protection on all pins.

Is the R_DS(on) value specified at both 2.5 V and 4.5 V gate drive?

Yes - R_DS(on) is guaranteed at multiple gate voltages: 23 mΩ max at V_GS = 2.5 V (I_D = 5.5 A), and 18 mΩ max at V_GS = 4.5 V (I_D = 6.5 A). These values are measured per JEDEC JESD24-11 and reflect actual on-resistance under defined test conditions, enabling accurate loss calculation for 1.8 V, 2.5 V, and 3.3 V logic-driven applications.

Does DMG6968UTS-13 require external gate resistors for stability in high-speed switching?

Yes - although the internal gate resistance is 202 Ω, external series gate resistors (typically 5–22 Ω) are recommended to damp ringing, limit peak gate current, and control dV/dt during hard switching. This is especially critical in synchronous buck converters operating above 500 kHz, where uncontrolled gate oscillation can cause shoot-through or electromagnetic interference.