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Diodes Incorporated DMG8601UFG-7
- Part No.:
- DMG8601UFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerUDFN
- Datasheet:
-
DMG8601UFG-7.pdf
- Description:
- MOSFET 2N-CH 20V 6.1A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,835
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Product details
Overview
DMG8601UFG from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN3030-8 package, rated for 20 V VDSS, 6.1 A continuous drain current at 25°C, and 17 mΩ RDS(on) at VGS = 4.5 V. It features low input capacitance (143 pF Ciss), fast switching (tD(on) = 53 ns), and AEC-Q101 qualification for automotive power management circuits.
For engineers reviewing the DMG8601UFG datasheet, DMG8601UFG pinout, DMG8601UFG application, or DMG8601UFG equivalent, key selection criteria include its dual-channel layout, thermally optimized U-DFN3030-8 footprint, gate threshold stability across −55°C to +150°C, and ESD protection up to 2 kV - critical for compact DC-DC converter and load-switch designs.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single leadless package, enabling synchronous rectification or independent high-side/low-side control in half-bridge topologies. Its 1.8 V gate threshold enables operation with 1.8 V/2.5 V logic drivers, and the 29 pF Crss supports clean voltage transitions under 10 V VDS conditions.
The device uses NiPdAu-plated copper lead frame and green molding compound (UL 94V-0), achieving 136°C/W junction-to-ambient thermal resistance on FR-4 PCBs with minimum pad layout. Leakage remains below 1.0 μA IDSS at 20 V and ±10 μA IGSS at ±10 V, supporting low-power standby modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 12 V rail applications |
| RDS(on) | 17 mΩ @ VGS = 4.5 V, ID = 6.5 A - Enables <100 mW conduction loss at 6 A |
| Ciss | 143 pF - Low input capacitance reduces gate drive power and speeds turn-on |
| tD(on) | 53 ns - Short delay time supports >5 MHz switching in point-of-load converters |
| Qg | 8.8 nC - Total gate charge compatible with low-current gate drivers (e.g., microcontroller GPIO) |
| TJ Range | −55°C to +150°C - Qualified per AEC-Q101 for under-hood automotive environments |
| ESD Rating | 2 kV HBM - Robust handling during SMT assembly without special ESD controls |
Pinout & Package
Package: U-DFN3030-8 (3.0 mm × 3.0 mm × 0.6 mm), leadless, bottom-terminal, thermally enhanced plastic case with NiPdAu finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Source 2 | Common source terminals for each channel; electrically isolated but thermally coupled via shared die attach |
| 5, 6 | Gate 1 / Gate 2 | Independent gate inputs enabling asynchronous or synchronized control of both channels |
| 7, 8 | Drain 1 / Drain 2 | Separate drain connections allowing dual independent switches or parallel configuration |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 1.8 V VGS | 34 mΩ @ VGS = 1.8 V, ID = 3.5 A - Enables direct interface with low-voltage MCUs |
| Thermally optimized package | 136°C/W RθJA on FR-4 - Supports 0.92 W continuous dissipation without heatsink in space-constrained layouts |
| Matched dual-channel characteristics | Typical RDS(on) mismatch <5% - Ensures balanced current sharing in paralleled or complementary configurations |
| Fast diode recovery | VSD = 0.7 V @ IS = 1 A - Low forward drop improves efficiency in synchronous buck freewheeling paths |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Controlling 12 V lighting and actuator loads in BCM subassemblies with tight thermal budgets. IC Role / Device Role / Timing Role: Dual-channel load switch managing headlight dimming and mirror folding functions independently. Use Value: 17 mΩ RDS(on) limits self-heating to <600 mW at 6 A, eliminating need for external thermal relief in sealed enclosures. |
Use Scenario: Bidirectional 5–20 V power path control in portable USB-C PD adapters. IC Role / Device Role / Timing Role: Dual N-MOSFET array implementing reverse-polarity protection and VBUS switching. Use Value: 2 kV ESD rating ensures robustness against plug-in transients; 53 ns tD(on) supports dynamic load switching within PD negotiation timing windows. |
| Industrial PLC I/O Expansion | Smartphone Battery Protection |
|
Use Scenario: Solid-state relay replacement in 24 V digital output modules requiring long-term reliability. IC Role / Device Role / Timing Role: High-side switch for driving solenoids and indicator LEDs with integrated overtemperature shutdown margin. Use Value: AEC-Q101 qualification guarantees >1000-hour HTOL performance at 150°C junction temperature, exceeding industrial lifetime requirements. |
Use Scenario: Dual-path battery charge/discharge control in space-limited mobile devices. IC Role / Device Role / Timing Role: Independent channel control for charging FET and discharge FET in Li-ion protection IC companion circuitry. Use Value: 0.0172 g mass and 3.0 mm × 3.0 mm footprint enable placement directly adjacent to battery connectors without board area penalty. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Single-channel, same 20 V/6.1 A rating but larger SOT-26 package (RθJA = 150°C/W); no dual integration | Requires two devices and extra routing for dual-switch function; less board-area efficient | Select only when discrete layout flexibility outweighs thermal and footprint advantages of DMG8601UFG |
| AOB2018L | 20 V dual N-channel in 3×3 mm DFN, but higher RDS(on) (22 mΩ @ 4.5 V) and no AEC-Q101 qualification | Lacks automotive reliability validation; unsuitable for under-hood or safety-critical systems | Acceptable for consumer-grade DC-DC where cost is prioritized over qualification and thermal performance |
Compared with DMN2020LSD-13 and AOB2018L, the DMG8601UFG delivers superior thermal efficiency (136 vs. 150°C/W), guaranteed automotive qualification, and true monolithic dual-channel integration - reducing component count, parasitic inductance, and PCB area in high-density power stages.
Availability
DMG8601UFG is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, industrial PLC outputs, and smartphone battery management requiring stable component supply and AEC-Q101 compliance.
Supply support for DMG8601UFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMG8601UFG belongs to Diodes' AEC-Q101-qualified U-DFN power MOSFET product line, engineered for space-constrained, thermally demanding applications where low RDS(on), fast switching, and robust ESD tolerance are essential.
FAQ
What is the maximum continuous drain current for DMG8601UFG at 70°C ambient?
The DMG8601UFG supports 5.2 A continuous drain current at TA = +70°C with standard FR-4 PCB mounting and minimum recommended pad layout. This derating reflects thermal limitations imposed by its 136°C/W RθJA and 0.92 W power dissipation limit, not silicon capability.
Can DMG8601UFG be used in a synchronous buck converter's high-side/low-side configuration?
Yes - its dual N-channel structure, matched RDS(on), and independent gate terminals allow implementation as a half-bridge pair. However, high-side drive requires a bootstrap or charge-pump gate driver due to lack of integrated level-shifting circuitry.
Is the U-DFN3030-8 package compatible with standard reflow profiles?
Yes - the U-DFN3030-8 package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C). Its NiPdAu terminal finish ensures reliable solder joint formation using SnAgCu paste.
Does DMG8601UFG include integrated gate resistors or ESD protection diodes?
No - it contains no internal gate resistors or clamp diodes. The 2 kV HBM ESD rating is achieved through process-level protection structures. External gate resistors (typically 5–10 Ω) and TVS diodes are recommended for high-noise environments like automotive CAN bus proximity.
DMG8601UFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6.1A
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 143pF @ 10V
- Power - Max:
- 920mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN3030-8
DMG8601UFG-7 FAQ
1.How can I place an order for DMG8601UFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG8601UFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG8601UFG-7 reliable?
The price and inventory of DMG8601UFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG8601UFG-7 is usually 5 days.
3.What payment methods are accepted for DMG8601UFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG8601UFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG8601UFG-7?
DMG8601UFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG8601UFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG8601UFG-7?
For technical support, including DMG8601UFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG8601UFG-7 requirements.
6.How does Aetrix verify that DMG8601UFG-7 is sourced from the original manufacturer or authorized distributors?
All DMG8601UFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG8601UFG-7 meets industry standards.
7.What is the process for return or replacement of DMG8601UFG-7?
All DMG8601UFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG8601UFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG8601UFG-7 part is unused and in its original packaging.
Return procedure for DMG8601UFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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