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Diodes Incorporated DMG8822UTS-13

Part No.:
DMG8822UTS-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixDMG8822UTS-13.pdf
Description:
MOSFET 2N-CH 20V 4.9A 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,303

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Product details

Overview

DMG8822UTS-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSSOP-8L package, rated for 20 V VDSS, 4.9 A continuous drain current at 25°C, and 19–29 mΩ RDS(on) at VGS = 4.5 V/2.5 V. It features low input capacitance (Ciss = 841 pF), fast switching (tD(on) = 7.8 ns), and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMG8822UTS-13 datasheet, DMG8822UTS-13 pinout, DMG8822UTS-13 application, or DMG8822UTS-13 equivalent, key selection criteria include dual-channel RDS(on) matching, gate charge (Qg = 9.6 nC), thermal resistance (RθJA = 143 °C/W), and AEC-Q101 reliability validation in compact TSSOP-8L footprint.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices sharing common source terminals per channel (S1/S2) and independent gates (G1/G2), enabling synchronous buck, half-bridge, or load-switch configurations. Its 20 V rating targets 12 V automotive and industrial DC-DC systems where low conduction loss and fast turn-on are critical.

The device operates across –55°C to +150°C junction temperature, with gate threshold voltage tightly specified (0.5–0.9 V), and exhibits low leakage (IDSS ≤ 1.0 μA at 20 V). Dynamic parameters-including Qgd = 2.1 nC and Coss = 88 pF-support high-frequency PWM control up to several MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - Supports 12 V nominal rail systems with 67% headroom against transients
RDS(on) @ VGS = 4.5 V19–29 mΩ - Enables <100 mW conduction loss at 4.9 A in each channel
Qg9.6 nC - Allows efficient gate drive with standard 1-A drivers at ≥500 kHz switching
Ciss841 pF - Minimizes Miller effect and improves noise immunity in high-dV/dt environments
RθJA143 °C/W - Requires minimal copper area on FR-4 PCB to maintain TJ < 125°C at 0.87 W dissipation
AEC-Q101 QualifiedValidated for automotive underhood applications including engine control and body electronics

Pinout & Package

Package: TSSOP-8L (3.025 mm × 4.425 mm × 1.025 mm), lead-free, RoHS-compliant, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3Source 1 (S1)Common low-side return path for Channel 1; electrically tied internally
4Gate 1 (G1)Independent control input for Channel 1; requires 0.5–0.9 V threshold activation
5, 6, 7Source 2 (S2)Common low-side return path for Channel 2; isolated from S1
8Gate 2 (G2)Independent control input for Channel 2; enables dual synchronous operation

Key Features

FeatureDesign Value
Low RDS(on) matching between channelsEnsures balanced current sharing in parallel or complementary topologies without external balancing resistors
Fast switching with low Qgd/Qg ratioReduces cross-conduction risk in half-bridge designs and improves efficiency above 200 kHz
Integrated body diodes with VSD = 0.7–0.9 VSupports freewheeling in buck converters without external Schottky diodes
–55°C to +150°C operating rangeEnables deployment in under-hood automotive locations without derating at ambient >85°C

Applications

Automotive Body Control ModuleIndustrial DC-DC Load Switch

Use Scenario: Controlling door lock actuators and interior lighting via 12 V supply rails.

IC Role / Device Role / Timing Role: Dual-channel low-side switch managing two independent loads with coordinated enable timing.

Use Value: Eliminates need for discrete dual-MOSFET solutions while maintaining AEC-Q101 compliance and thermal margin.

Use Scenario: Hot-swap power sequencing for FPGA I/O banks and sensor subsystems.

IC Role / Device Role / Timing Role: Independent gate-controlled load switch providing inrush current limiting and fault isolation.

Use Value: Leverages matched RDS(on) and low Qg to minimize voltage droop during turn-on and reduce driver complexity.

USB-C Power Delivery SinkBrushless DC Motor Gate Driver Stage

Use Scenario: Input power path management for USB-C PD sink ports requiring reverse-current blocking.

IC Role / Device Role / Timing Role: Back-to-back N-channel configuration using both channels for bidirectional blocking.

Use Value: Achieves <10 mΩ effective RDS(on) with 4.5 V gate drive and avoids P-channel cost/size penalty.

Use Scenario: High-side/low-side drive stage for 24 V BLDC motor controllers in HVAC blowers.

IC Role / Device Role / Timing Role: Low-side dual switch driving two phases of a three-phase inverter leg.

Use Value: Delivers consistent switching performance across temperature due to tight VGS(th) distribution and low Coss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN6016LSD-13Single-channel, 60 V VDSS, higher RDS(on) (16 mΩ @ 10 V), no AEC-Q101 ratingSuitable for non-automotive 24–48 V industrial loads onlySelect when higher voltage rating outweighs dual-channel integration and automotive qualification needs
SI6926ADQ-T1-GE3Dual-channel, 30 V VDSS, higher RDS(on) (28 mΩ @ 4.5 V), same TSSOP-8L packageCompatible pinout but requires gate drive redesign for higher VGS(th) (1.0–2.5 V)Choose when 30 V headroom is required and AEC-Q101 is not mandatory

Compared with DMG8822UTS-13, DMN6016LSD-13 trades dual-channel integration and automotive qualification for higher voltage capability, while SI6926ADQ-T1-GE3 offers identical packaging and channel count but sacrifices low-threshold drive and AEC-Q101 validation for extended voltage range.

Availability

DMG8822UTS-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC load switching, and USB-C power delivery sink designs requiring stable component supply and long-term lifecycle support.

Supply support for DMG8822UTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions.

The DMG8822UTS-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial applications demanding robust thermal performance and precise parametric matching in dual-channel configurations.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The DMG8822UTS-13 supports 3.9 A continuous drain current per channel at TA = 70°C with standard FR-4 PCB mounting and minimum recommended pad layout. This derating reflects thermal limits imposed by RθJA = 143 °C/W and 0.87 W maximum power dissipation.

Can the two channels be used in a back-to-back configuration for reverse-current blocking?

Yes-the DMG8822UTS-13's dual N-channel topology allows back-to-back connection (sources tied together, drains as input/output) to achieve bidirectional blocking with 4.5 V gate drive. Body diode orientation supports this configuration without external components.

Is the TSSOP-8L package compatible with standard reflow profiles for lead-free assembly?

Yes-the DMG8822UTS-13 is qualified for lead-free reflow per J-STD-020D Level 1 moisture sensitivity, supporting peak temperatures up to 260°C. Its "Green" molding compound meets UL 94V-0 flammability requirements.

Does the device include integrated ESD protection on gate terminals?

No explicit ESD protection circuitry is documented in the datasheet. The gate oxide is rated for ±8 V VGS, and design-in requires external gate resistors and TVS clamping per application environment-especially in automotive harness-connected circuits.

DMG8822UTS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Common Drain
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.9A (Ta)
Rds On (Max) @ Id, Vgs:
25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
841pF @ 10V
Power - Max:
870mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

DMG8822UTS-13 FAQ

1.How can I place an order for DMG8822UTS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG8822UTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG8822UTS-13 reliable?

The price and inventory of DMG8822UTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG8822UTS-13 is usually 5 days.

3.What payment methods are accepted for DMG8822UTS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG8822UTS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG8822UTS-13?

DMG8822UTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG8822UTS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG8822UTS-13?

For technical support, including DMG8822UTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG8822UTS-13 requirements.

6.How does Aetrix verify that DMG8822UTS-13 is sourced from the original manufacturer or authorized distributors?

All DMG8822UTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG8822UTS-13 meets industry standards.

7.What is the process for return or replacement of DMG8822UTS-13?

All DMG8822UTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG8822UTS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG8822UTS-13 part is unused and in its original packaging.

Return procedure for DMG8822UTS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMG8822UTS-13 Tags

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