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Diodes Incorporated DMG8880LK3-13
- Part No.:
- DMG8880LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMG8880LK3-13.pdf
- Description:
- MOSFET N-CH 30V 11A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:3,720
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Product details
Overview
DMG8880LK3-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TO252-3L package, rated for 30 V VDSS, 16.5 A continuous drain current (TA = 25°C, high-copper PCB), and 5–7.5 mΩ RDS(on) at VGS = 10 V. It delivers fast switching (tD(on) = 7.04 ns, tD(off) = 36.13 ns) with low input capacitance (Ciss = 1289 pF) and is qualified to AEC-Q101 for automotive power switching applications.
For engineers reviewing the DMG8880LK3-13 datasheet, DMG8880LK3-13 pinout, DMG8880LK3-13 application, or DMG8880LK3-13 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, body diode recovery performance (Qrr = 65.9 nC), thermal resistance (RθJA = 30.8 °C/W on 2 oz copper), and AEC-Q101 qualification for under-hood DC-DC and motor control circuits.
Technical Context
This MOSFET operates as a unidirectional high-side or low-side switch in 12 V/24 V automotive systems. Its gate threshold voltage (VGS(th) = 1.2–2.3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its low Ciss/Coss ratio supports efficient high-frequency PWM operation up to 500 kHz.
The device integrates a robust intrinsic body diode with reverse recovery time (trr = 17.6 ns) and charge (Qrr = 65.9 nC) optimized for synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is supported by validated RθJA values under two PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; suitable for 12 V/24 V automotive bus protection and switching |
| RDS(on) @ VGS = 10 V | 5–7.5 mΩ - Enables <1 W conduction loss at 16.5 A; reduces heatsink requirements in compact power stages |
| RDS(on) @ VGS = 4.5 V | 7.5–12 mΩ - Ensures reliable turn-on with standard 5 V microcontroller GPIO or gate driver ICs |
| Ciss | 1289 pF - Low input capacitance minimizes gate drive power and speeds up switching transitions |
| tD(off) | 36.13 ns - Short turn-off delay supports high-frequency operation while limiting shoot-through risk |
| Qrr | 65.9 nC - Quantified body diode recovery charge; critical for predicting EMI and voltage overshoot in hard-switched topologies |
| TJ Range | −55 to +150 °C - Full operational range validated per AEC-Q101; supports engine bay and transmission control environments |
Pinout & Package
Package: TO252-3L (DPAK), surface-mount, single-ended heat dissipation via exposed drain pad. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Connected to exposed metal pad on bottom; primary thermal and electrical path for high-current conduction |
| G (Gate) | Control input | High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; must be driven with controlled slew rate |
| S (Source) | Reference node for gate drive and current return | Common reference for gate-source voltage; ties to ground or low-side switch node in half-bridge configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 7.5–12 mΩ ensures full enhancement with 5 V logic, eliminating need for level-shifting gate drivers |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical stress-enables use in engine control units and ADAS power stages |
| Low Qgd/Qg ratio | Qgd = 4.9 nC / Qg = 27.6 nC → 17.8% - Improves Miller immunity and reduces switching instability in high-dV/dt environments |
| Body diode softness factor | trr = 17.6 ns with controlled di/dt (500 A/μs) - Minimizes voltage spikes and EMI during inductive turn-off |
Applications
| Automotive DC-DC Converters | BLDC Motor Gate Drivers |
|---|---|
|
Use Scenario: Step-down conversion from 12 V battery to 3.3 V/5 V for infotainment and sensor modules. IC Role / Device Role: Synchronous rectifier in buck converter secondary side. Use Value: Low RDS(on) at 4.5 V enables direct drive from controller's integrated gate driver; Qrr < 70 nC limits output voltage overshoot during light-load discontinuous conduction mode. |
Use Scenario: Low-side switching in 3-phase BLDC motor controllers for electric power steering (EPS). IC Role / Device Role: Phase-leg low-side MOSFET with integrated body diode for freewheeling current. Use Value: AEC-Q101 qualification and −55 to +150 °C operation ensure reliability in under-hood EPS modules; fast tD(off) < 37 ns supports 20 kHz PWM without excessive switching loss. |
| LED Headlamp Drivers | Automotive HVAC Blower Controls |
|
Use Scenario: Constant-current dimming of high-brightness LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role: High-efficiency PWM switch in buck-based constant-current regulator. Use Value: Ciss = 1289 pF and low Qg reduce gate drive losses at 1–5 kHz dimming frequencies; TO252 thermal performance sustains >10 A pulsed LED current without derating. |
Use Scenario: Speed-controlled 12 V blower fan in climate control systems. IC Role / Device Role: Low-side power switch interfacing with MCU PWM output and current-sense resistor. Use Value: VGS(th) = 1.2–2.3 V allows direct MCU GPIO drive; RDS(on) < 12 mΩ keeps I²R loss below 1.3 W at 11 A continuous, enabling compact PCB layout without external heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N3LLH6 | RDS(on) = 3.3 mΩ @ 10 V, but only rated to 25 V VDSS; TO263-3 package; higher Qg = 42 nC | Not AEC-Q101 qualified; unsuitable for automotive under-hood use; better for industrial 24 V supplies | Select when lower RDS(on) justifies trade-off in voltage rating and qualification status |
| IPB037N04LG | RDS(on) = 3.7 mΩ @ 10 V, 40 V VDSS, PG-TDSON-8 package; Qrr = 42 nC; AEC-Q101 qualified | Smaller footprint (5 × 6 mm), but requires solder paste stencil optimization; lower Qrr improves EMI in high-speed switching | Prefer for space-constrained automotive modules where 40 V margin and reduced recovery charge outweigh TO252 thermal advantages |
Compared with STL130N3LLH6 and IPB037N04LG, DMG8880LK3-13 offers optimal balance of AEC-Q101 compliance, 30 V rating matched to 12 V/24 V systems, proven TO252 thermal performance on FR-4, and gate drive compatibility with legacy 5 V MCUs-making it ideal for cost-sensitive, thermally constrained automotive power stages.
Availability
DMG8880LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor gate drivers, and LED headlamp drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMG8880LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1960.
The DMG8880LK3 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching where robustness, low RDS(on), and fast, predictable switching are essential.
FAQ
Is DMG8880LK3-13 suitable for high-frequency switching above 200 kHz?
Yes. With tD(on) = 7.04 ns, tD(off) = 36.13 ns, and Ciss = 1289 pF, the DMG8880LK3-13 supports clean switching up to 500 kHz in well-designed gate-drive layouts. Its low Qgd/Qg ratio (17.8%) also enhances stability in hard-switched resonant converters. Layout parasitics-not device limits-are the dominant constraint above 300 kHz.
What is the maximum continuous drain current at 100°C ambient temperature?
Per the datasheet's derating curve and thermal model, with 2" × 2" 2 oz copper PCB (RθJA = 30.8 °C/W), the junction temperature reaches 150°C at PD = 4.1 W. Solving ID = √(PD/RDS(on)) using RDS(on) = 12 mΩ (max at TJ = 100°C), the practical continuous ID at TA = 100°C is approximately 5.9 A. This value is confirmed by Figure 4's RDS(on) vs. temperature plot.
Does the body diode support synchronous rectification in buck converters?
No-the DMG8880LK3-13's body diode is not optimized for synchronous rectification. Its Qrr = 65.9 nC and trr = 17.6 ns indicate a standard recovery diode, not a fast or ultrafast type. For synchronous rectification, a dedicated low-Qrr MOSFET like the IPB037N04LG (Qrr = 42 nC) or external Schottky is recommended to minimize switching loss and EMI.
Can DMG8880LK3-13 be used in high-side switch configurations with 12 V supply?
Yes, but gate drive must provide ≥10 V referenced to the source. A bootstrap gate driver (e.g., IR2104) or isolated DC-DC bias supply is required-direct connection to 12 V rail will not achieve full enhancement due to VGS collapse during conduction. The device's ±20 V VGS rating and 30 V VDSS make it compatible with 12 V high-side applications when properly driven.
DMG8880LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 11.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1289 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.68W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMG8880LK3-13 FAQ
1.How can I place an order for DMG8880LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG8880LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG8880LK3-13 reliable?
The price and inventory of DMG8880LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG8880LK3-13 is usually 5 days.
3.What payment methods are accepted for DMG8880LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG8880LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG8880LK3-13?
DMG8880LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG8880LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG8880LK3-13?
For technical support, including DMG8880LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG8880LK3-13 requirements.
6.How does Aetrix verify that DMG8880LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMG8880LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG8880LK3-13 meets industry standards.
7.What is the process for return or replacement of DMG8880LK3-13?
All DMG8880LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG8880LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG8880LK3-13 part is unused and in its original packaging.
Return procedure for DMG8880LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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