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Diodes Incorporated DMG9926USD-13
- Part No.:
- DMG9926USD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG9926USD-13.pdf
- Description:
- MOSFET 2N-CH 20V 8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:102,722
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Product details
Overview
DMG9926USD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20V V(BR)DSS, 24mΩ RDS(ON) @ 4.5V VGS, and 8A continuous drain current at +25°C. It integrates two matched low-threshold devices optimized for synchronous rectification and high-efficiency DC-DC power stages in compact industrial and portable power supplies.
For engineers reviewing the DMG9926USD-13 datasheet, DMG9926USD-13 pinout, DMG9926USD-13 application, or DMG9926USD-13 equivalent, key selection criteria include gate threshold voltage (0.5–0.9V), dynamic capacitance (Ciss = 867pF), thermal resistance (RθJA = 96°C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching performance (td(on) = 13.2ns, td(off) = 64.8ns) and low gate charge (Qg = 8.8nC). Its matched pair architecture supports complementary drive in half-bridge configurations without external balancing components.
The device features ultra-low gate threshold (VGS(th) = 0.5–0.9V), enabling direct interface with 1.8V/2.5V logic controllers, and integrated body diodes with low forward voltage (VSD = 0.5–0.9V at 1A) for efficient freewheeling in buck converters and OR-ing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before avalanche conduction; sets upper limit for input voltage in 12V-input DC-DC stages. |
| RDS(ON) | 24mΩ @ VGS = 4.5V - On-resistance at standard logic-level drive; determines conduction loss in 8A load paths. |
| ID max | 8A @ TA = +25°C - Continuous DC current rating under FR-4 PCB conditions; defines thermal design margin for 1W dissipation. |
| VGS(th) | 0.5–0.9V - Gate threshold range enabling reliable turn-on with 1.8V microcontroller I/O or low-voltage PMIC outputs. |
| Ciss | 867pF - Input capacitance at VDS = 15V; directly impacts gate driver power and switching speed in high-frequency (>1MHz) converters. |
| Qg | 8.8nC - Total gate charge required for full turn-on; used to calculate gate driver peak current (e.g., 88mA for 100ns rise time). |
| RθJA | 96°C/W - Junction-to-ambient thermal resistance on minimum pad layout; enables estimation of junction temperature rise under real operating power. |
Pinout & Package
Package: SO-8 (SOP-8L), surface-mount, lead-free, RoHS-compliant molded plastic case per J-STD-020D Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Control terminal for first N-channel MOSFET; accepts logic-level gate drive signals. |
| 2 (S1) | Source of Channel 1 | Power return node for Channel 1; internally tied to exposed thermal pad in some layouts. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side power switching node; connects to input rail or inductor node in buck topology. |
| 4 (D2) | Drain of Channel 2 | Independent drain terminal for second N-channel MOSFET; enables dual-switch or half-bridge configuration. |
| 5 (S2) | Source of Channel 2 | Separate source node for Channel 2; allows independent source referencing or Kelvin sensing. |
| 6 (G2) | Gate of Channel 2 | Independent gate control for second channel; supports asynchronous or synchronized dual-phase operation. |
| 7, 8 (S1/S2) | Source terminals (dual connection) | Redundant source pins improve current handling and reduce parasitic inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.8V VGS | 37mΩ - Enables efficient operation with ultra-low-voltage controllers (e.g., battery-fuel-gauge ICs or sub-2V MCUs). |
| AEC-Q101 qualified | Qualified for automotive power management - meets stress-test requirements for temperature cycling, HTRB, and ESD robustness. |
| Low Coss & Crss | Coss = 85pF, Crss = 81pF - Minimizes Miller effect and improves hard-switching efficiency in synchronous rectifiers. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) - satisfies strict environmental compliance for EU and Asia-Pacific markets. |
| Fast switching with low Qgd | Qgd = 3nC - Reduces gate-drive energy loss and improves controllability during transition, critical for ZVS/ZCS topologies. |
Applications
| DC-DC Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: Step-down voltage conversion in 5V/3.3V point-of-load supplies for FPGA, SoC, and DSP subsystems. IC Role / Device Role: Dual-channel power switch implementing high-side and low-side switching in integrated buck controller ICs. Use Value: 24mΩ RDS(ON) at 4.5V reduces conduction loss by >35% vs. comparable 30mΩ parts, improving full-load efficiency to >94% at 2A output. | Use Scenario: Secondary-side rectification in isolated flyback or forward converters for USB PD adapters and industrial AC-DC modules. IC Role / Device Role: Replacement for Schottky diodes to eliminate forward-voltage drop and associated heat generation. Use Value: VSD = 0.5–0.9V body diode enables low-loss freewheeling; combined with 8A ID rating, supports 45W+ output without heatsink. |
| Load Switch / OR-ing Circuit | Automotive Body Control Module |
Use Scenario: Power path management between primary and backup supplies in telecom line cards and redundant server PSUs. IC Role / Device Role: Dual N-MOSFET configured as back-to-back switches for bidirectional blocking and controlled inrush limiting. Use Value: Matched channels ensure symmetrical on-resistance and timing; 0.9V VGS(th) allows precise enable/disable control via 1.2V supervisor ICs. | Use Scenario: Low-voltage power distribution in vehicle lighting, HVAC actuators, and sensor interface modules. IC Role / Device Role: AEC-Q101-qualified dual switch driving resistive and inductive loads up to 8A per channel. Use Value: -55°C to +150°C operating range and 96°C/W RθJA support operation in engine bay environments without derating below 6A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(ON) (30mΩ @ 4.5V), lower ID (6.5A), same SO-8 package | Less suitable for 8A continuous loads; better for cost-sensitive 5A designs with relaxed thermal constraints | Select when BOM cost priority outweighs efficiency gain and thermal headroom is available. |
| SI6926ADQ-T1-GE3 | Lower Ciss (620pF), higher V(BR)DSS (30V), same 8A rating and SO-8 footprint | Better for 24V-input systems; slightly slower switching due to higher Qg (10.5nC) | Prefer for industrial 24V DC-DC where higher breakdown margin and lower input capacitance justify trade-off in gate drive strength. |
Compared with DMN2020LSD-13 and SI6926ADQ-T1-GE3, DMG9926USD-13 delivers the lowest RDS(ON) at 1.8–4.5V drive, making it optimal for space-constrained, high-efficiency 12V-input power rails where thermal management is limited and gate drive voltage is constrained.
Availability
DMG9926USD-13 is available at Aetrix Electronics and suitable for DC-DC converters, synchronous rectifiers, load switches, and automotive body control modules requiring stable component supply across production lifecycles.
Supply support for DMG9926USD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMG9926USD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power management in space-constrained and thermally demanding applications including computing, communications, and automotive electronics.
FAQ
What is the maximum safe operating junction temperature for DMG9926USD-13?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this value risks permanent degradation of the silicon die and bond wires. Derating is required above +125°C ambient, and thermal design must ensure TJ remains ≤150°C under worst-case power dissipation and airflow conditions.
Can DMG9926USD-13 be used in a single-ended forward converter as a synchronous rectifier?
Yes - its low VGS(th) (0.5–0.9V) and low RDS(ON) (24mΩ @ 4.5V) make it suitable for self-driven synchronous rectification in forward converters. The internal body diode's 0.5–0.9V forward voltage ensures reliable turn-on during dead-time, and the 8A rating supports typical secondary-side currents up to 6A with margin.
Is the SO-8 package thermally enhanced with an exposed pad?
No - the DMG9926USD-13 uses a standard SO-8 (SOP-8L) package without an exposed thermal pad. Its thermal performance relies on copper pour on the PCB and the 72mg mass; RθJA = 96°C/W is measured on FR-4 with minimum recommended pad layout per AP02001.
Does DMG9926USD-13 support parallel operation of both channels for higher current?
Yes - the matched dual N-channel structure allows paralleling both channels to handle up to 16A total current, provided gate drive is balanced and PCB layout minimizes asymmetry in source inductance. RDS(ON) matching is inherent in monolithic construction, reducing current imbalance risk compared to discrete dual-MOSFET solutions.
DMG9926USD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 867pF @ 15V
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG9926USD-13 FAQ
1.How can I place an order for DMG9926USD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG9926USD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG9926USD-13 reliable?
The price and inventory of DMG9926USD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG9926USD-13 is usually 5 days.
3.What payment methods are accepted for DMG9926USD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG9926USD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG9926USD-13?
DMG9926USD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG9926USD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG9926USD-13?
For technical support, including DMG9926USD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG9926USD-13 requirements.
6.How does Aetrix verify that DMG9926USD-13 is sourced from the original manufacturer or authorized distributors?
All DMG9926USD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG9926USD-13 meets industry standards.
7.What is the process for return or replacement of DMG9926USD-13?
All DMG9926USD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG9926USD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG9926USD-13 part is unused and in its original packaging.
Return procedure for DMG9926USD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG9926USD-13 Tags
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