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Diodes Incorporated DMG9933USD-13

Part No.:
DMG9933USD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMG9933USD-13.pdf
Description:
MOSFET 2P-CH 20V 4.6A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,778

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Product details

Overview

DMG9933USD-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -20V VDSS, 75mΩ RDS(ON) @ VGS = -4.5V, and -4.6A continuous drain current at +25°C - designed for high-efficiency DC-DC converters and backlight power control in portable displays.

For engineers reviewing the DMG9933USD-13 datasheet, DMG9933USD-13 pinout, DMG9933USD-13 application, or DMG9933USD-13 equivalent, key selection criteria include dual-channel P-MOSFET configuration, low gate charge (6.5nC), fast switching (tD(off) = 46.5ns), thermal resistance (RθJA = 109°C/W), and SO-8 lead-free packaging compliant with JEDEC high-reliability standards.

Technical Context

This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single SO-8 package, enabling synchronous buck converter topologies and dual-rail load switching without external gate drivers. Its -1.1V maximum VGS(th) ensures reliable turn-on with standard logic-level negative gate drive.

The device features low input capacitance (Ciss = 608pF) and optimized charge distribution (Qgd/Qg = 23%), supporting high-frequency operation up to 1MHz while minimizing switching losses. Thermal design is aided by RθJA = 109°C/W on FR-4 PCB with minimum pad layout.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -20V - supports 12V rail and automotive 12V systems with margin against transients
RDS(ON) 75mΩ @ VGS = -4.5V - enables <1.5W conduction loss at 4.6A in compact layouts
Qg 6.5nC - reduces gate drive power and allows use with low-current controllers
tD(off) 46.5ns - supports >1MHz switching in synchronous buck regulators
Ciss 608pF - limits Miller effect and improves noise immunity in high-dV/dt environments
PD 1.15W - defines maximum steady-state power dissipation on standard FR-4 board
TJ Range -55°C to +150°C - qualified for industrial and extended-temperature applications

Pinout & Package

Package: SO-8, surface-mount, lead-free, RoHS-compliant molded plastic (UL 94V-0), 0.072g mass, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source 1 / Drain 1 / Gate 1 / Source 1 Left-side channel: pins 1–4 form S1-D1-G1-S1 (dual-source configuration)
5, 6, 7, 8 Drain 2 / Gate 2 / Source 2 / Source 2 Right-side channel: pins 5–8 form D2-G2-S2-S2 (shared-source topology)

Key Features

Feature Design Value
Dual P-channel integration Enables space-efficient half-bridge or dual-load switch without discrete pairing
Low RDS(ON) at -2.5V 110mΩ - supports partial-gate-drive operation in battery-powered systems down to 2.5V logic
Low Coss & Crss 81.5pF / 72.4pF - minimizes voltage-dependent capacitance and improves light-load efficiency
Fast tr/tf 10.3ns / 22.2ns - reduces switching transition time and associated EMI generation
JEDEC-qualified reliability Qualified per AEC-Q stress standards - suitable for industrial-grade power management without automotive qualification overhead

Applications

LED Backlight Control USB-C Power Delivery Switch

Use Scenario: Dual independent current sinks for white LED strings in tablet display backlights.

IC Role / Device Role: High-side P-MOSFET switch controlling cathode-side current with PWM dimming.

Use Value: 75mΩ RDS(ON) limits heat rise to <1.2°C/W at 2A per channel, enabling thin-profile designs.

Use Scenario: Dual-path 5V/20V bidirectional power routing in USB-C PD sink applications.

IC Role / Device Role: Reverse-polarity protected load switch managing VBUS and auxiliary rails.

Use Value: -20V rating and 109°C/W thermal resistance allow sustained 3A operation without heatsinking.

Industrial DC-DC Converter Smartphone Power Management

Use Scenario: Synchronous rectification in 12V-to-3.3V buck converter for PLC I/O modules.

IC Role / Device Role: Low-side synchronous rectifier paired with N-MOSFET high-side switch.

Use Value: 6.5nC Qg reduces gate driver burden and enables direct MCU GPIO control.

Use Scenario: Dual-rail power gating for camera module and audio codec subsystems.

IC Role / Device Role: Independent enable-controlled power switches with fast turn-off (<50ns).

Use Value: 46.5ns tD(off) prevents shoot-through during rail sequencing in multi-voltage SoC systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG1012T-7 Single P-MOSFET, 20V, 115mΩ @ -4.5V, SOT-23-3 Not dual-channel; requires two devices for same function; higher RDS(ON) and no shared-source layout Select when board area permits discrete placement and thermal isolation is preferred over integration
SI3457DV-T1-GE3 Dual P-MOSFET, 20V, 85mΩ @ -4.5V, SO-8, Qg = 9.5nC Higher gate charge increases driver requirements; slightly lower RDS(ON) but larger Ciss (720pF) Prefer when lower on-resistance outweighs switching speed needs and gate drive capability is ample

Compared with DMG9933USD-13, DMG1012T-7 sacrifices integration and thermal coupling for flexibility and cost-per-device, while SI3457DV-T1-GE3 trades faster switching and lower drive power for marginally better conduction loss - making DMG9933USD-13 optimal for space-constrained, high-frequency DC-DC and backlighting where gate drive headroom is limited.

Availability

DMG9933USD-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and USB-C power delivery systems requiring stable component supply, JEDEC-qualified reliability, and SO-8 surface-mount compatibility.

Supply support for DMG9933USD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMG9933USD belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in portable and industrial electronics - emphasizing low RDS(ON), fast switching, and robust thermal performance in standard packages.

FAQ

What is the maximum safe operating junction temperature for DMG9933USD-13?

The absolute maximum junction temperature is +150°C, and the device is characterized across -55°C to +150°C. At 1.15W power dissipation on FR-4 with minimum pad layout, junction temperature rise is approximately 125°C above ambient - confirming safe operation below TJ(max) at ≤25°C ambient. Derating is required above 25°C ambient per RθJA = 109°C/W.

Can DMG9933USD-13 be used in automotive applications?

DMG9933USD-13 is not AEC-Q200 qualified and lacks PPAP documentation or IATF 16949 manufacturing certification. Diodes offers automotive-grade variants (e.g., DMG9933USDA) with Q-suffix marking, AEC-Q101 qualification, and change-controlled manufacturing - these must be selected for automotive use; the -13 suffix denotes commercial-grade product.

How are the source terminals configured in the SO-8 package?

Pins 1 and 4 are internally connected to Source 1; pins 7 and 8 are internally connected to Source 2. This dual-source configuration allows independent grounding of each channel or common-source connection depending on circuit topology - confirmed by Diodes' official SO-8 pin diagram and electrical test data showing isolated source paths.

Is the 75mΩ RDS(ON) guaranteed across temperature?

No - 75mΩ is specified at TA = +25°C and VGS = -4.5V. RDS(ON) increases with temperature: typical normalized values show ~1.5× increase at +125°C. The datasheet provides Fig. 5 and Fig. 6 showing RDS(ON) vs. TJ; at +125°C and VGS = -4.5V, RDS(ON) is approximately 110mΩ.

DMG9933USD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.6A
Rds On (Max) @ Id, Vgs:
75mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
608.4pF @ 6V
Power - Max:
1.15W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMG9933USD-13 FAQ

1.How can I place an order for DMG9933USD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG9933USD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of DMG9933USD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG9933USD-13 is usually 5 days.

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DMG9933USD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG9933USD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG9933USD-13?

For technical support, including DMG9933USD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG9933USD-13 requirements.

6.How does Aetrix verify that DMG9933USD-13 is sourced from the original manufacturer or authorized distributors?

All DMG9933USD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG9933USD-13 meets industry standards.

7.What is the process for return or replacement of DMG9933USD-13?

All DMG9933USD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG9933USD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG9933USD-13 part is unused and in its original packaging.

Return procedure for DMG9933USD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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