Diodes Incorporated DMG9933USD-13
- Part No.:
- DMG9933USD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMG9933USD-13.pdf
- Description:
- MOSFET 2P-CH 20V 4.6A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:15,778
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Product details
Overview
DMG9933USD-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -20V VDSS, 75mΩ RDS(ON) @ VGS = -4.5V, and -4.6A continuous drain current at +25°C - designed for high-efficiency DC-DC converters and backlight power control in portable displays.
For engineers reviewing the DMG9933USD-13 datasheet, DMG9933USD-13 pinout, DMG9933USD-13 application, or DMG9933USD-13 equivalent, key selection criteria include dual-channel P-MOSFET configuration, low gate charge (6.5nC), fast switching (tD(off) = 46.5ns), thermal resistance (RθJA = 109°C/W), and SO-8 lead-free packaging compliant with JEDEC high-reliability standards.
Technical Context
This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single SO-8 package, enabling synchronous buck converter topologies and dual-rail load switching without external gate drivers. Its -1.1V maximum VGS(th) ensures reliable turn-on with standard logic-level negative gate drive.
The device features low input capacitance (Ciss = 608pF) and optimized charge distribution (Qgd/Qg = 23%), supporting high-frequency operation up to 1MHz while minimizing switching losses. Thermal design is aided by RθJA = 109°C/W on FR-4 PCB with minimum pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - supports 12V rail and automotive 12V systems with margin against transients |
| RDS(ON) | 75mΩ @ VGS = -4.5V - enables <1.5W conduction loss at 4.6A in compact layouts |
| Qg | 6.5nC - reduces gate drive power and allows use with low-current controllers |
| tD(off) | 46.5ns - supports >1MHz switching in synchronous buck regulators |
| Ciss | 608pF - limits Miller effect and improves noise immunity in high-dV/dt environments |
| PD | 1.15W - defines maximum steady-state power dissipation on standard FR-4 board |
| TJ Range | -55°C to +150°C - qualified for industrial and extended-temperature applications |
Pinout & Package
Package: SO-8, surface-mount, lead-free, RoHS-compliant molded plastic (UL 94V-0), 0.072g mass, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Drain 1 / Gate 1 / Source 1 | Left-side channel: pins 1–4 form S1-D1-G1-S1 (dual-source configuration) |
| 5, 6, 7, 8 | Drain 2 / Gate 2 / Source 2 / Source 2 | Right-side channel: pins 5–8 form D2-G2-S2-S2 (shared-source topology) |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Enables space-efficient half-bridge or dual-load switch without discrete pairing |
| Low RDS(ON) at -2.5V | 110mΩ - supports partial-gate-drive operation in battery-powered systems down to 2.5V logic |
| Low Coss & Crss | 81.5pF / 72.4pF - minimizes voltage-dependent capacitance and improves light-load efficiency |
| Fast tr/tf | 10.3ns / 22.2ns - reduces switching transition time and associated EMI generation |
| JEDEC-qualified reliability | Qualified per AEC-Q stress standards - suitable for industrial-grade power management without automotive qualification overhead |
Applications
| LED Backlight Control | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Dual independent current sinks for white LED strings in tablet display backlights. IC Role / Device Role: High-side P-MOSFET switch controlling cathode-side current with PWM dimming. Use Value: 75mΩ RDS(ON) limits heat rise to <1.2°C/W at 2A per channel, enabling thin-profile designs. |
Use Scenario: Dual-path 5V/20V bidirectional power routing in USB-C PD sink applications. IC Role / Device Role: Reverse-polarity protected load switch managing VBUS and auxiliary rails. Use Value: -20V rating and 109°C/W thermal resistance allow sustained 3A operation without heatsinking. |
| Industrial DC-DC Converter | Smartphone Power Management |
|
Use Scenario: Synchronous rectification in 12V-to-3.3V buck converter for PLC I/O modules. IC Role / Device Role: Low-side synchronous rectifier paired with N-MOSFET high-side switch. Use Value: 6.5nC Qg reduces gate driver burden and enables direct MCU GPIO control. |
Use Scenario: Dual-rail power gating for camera module and audio codec subsystems. IC Role / Device Role: Independent enable-controlled power switches with fast turn-off (<50ns). Use Value: 46.5ns tD(off) prevents shoot-through during rail sequencing in multi-voltage SoC systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T-7 | Single P-MOSFET, 20V, 115mΩ @ -4.5V, SOT-23-3 | Not dual-channel; requires two devices for same function; higher RDS(ON) and no shared-source layout | Select when board area permits discrete placement and thermal isolation is preferred over integration |
| SI3457DV-T1-GE3 | Dual P-MOSFET, 20V, 85mΩ @ -4.5V, SO-8, Qg = 9.5nC | Higher gate charge increases driver requirements; slightly lower RDS(ON) but larger Ciss (720pF) | Prefer when lower on-resistance outweighs switching speed needs and gate drive capability is ample |
Compared with DMG9933USD-13, DMG1012T-7 sacrifices integration and thermal coupling for flexibility and cost-per-device, while SI3457DV-T1-GE3 trades faster switching and lower drive power for marginally better conduction loss - making DMG9933USD-13 optimal for space-constrained, high-frequency DC-DC and backlighting where gate drive headroom is limited.
Availability
DMG9933USD-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and USB-C power delivery systems requiring stable component supply, JEDEC-qualified reliability, and SO-8 surface-mount compatibility.
Supply support for DMG9933USD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMG9933USD belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in portable and industrial electronics - emphasizing low RDS(ON), fast switching, and robust thermal performance in standard packages.
FAQ
What is the maximum safe operating junction temperature for DMG9933USD-13?
The absolute maximum junction temperature is +150°C, and the device is characterized across -55°C to +150°C. At 1.15W power dissipation on FR-4 with minimum pad layout, junction temperature rise is approximately 125°C above ambient - confirming safe operation below TJ(max) at ≤25°C ambient. Derating is required above 25°C ambient per RθJA = 109°C/W.
Can DMG9933USD-13 be used in automotive applications?
DMG9933USD-13 is not AEC-Q200 qualified and lacks PPAP documentation or IATF 16949 manufacturing certification. Diodes offers automotive-grade variants (e.g., DMG9933USDA) with Q-suffix marking, AEC-Q101 qualification, and change-controlled manufacturing - these must be selected for automotive use; the -13 suffix denotes commercial-grade product.
How are the source terminals configured in the SO-8 package?
Pins 1 and 4 are internally connected to Source 1; pins 7 and 8 are internally connected to Source 2. This dual-source configuration allows independent grounding of each channel or common-source connection depending on circuit topology - confirmed by Diodes' official SO-8 pin diagram and electrical test data showing isolated source paths.
Is the 75mΩ RDS(ON) guaranteed across temperature?
No - 75mΩ is specified at TA = +25°C and VGS = -4.5V. RDS(ON) increases with temperature: typical normalized values show ~1.5× increase at +125°C. The datasheet provides Fig. 5 and Fig. 6 showing RDS(ON) vs. TJ; at +125°C and VGS = -4.5V, RDS(ON) is approximately 110mΩ.
DMG9933USD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 608.4pF @ 6V
- Power - Max:
- 1.15W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMG9933USD-13 FAQ
1.How can I place an order for DMG9933USD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG9933USD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG9933USD-13?
For technical support, including DMG9933USD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG9933USD-13 requirements.
6.How does Aetrix verify that DMG9933USD-13 is sourced from the original manufacturer or authorized distributors?
All DMG9933USD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG9933USD-13 meets industry standards.
7.What is the process for return or replacement of DMG9933USD-13?
All DMG9933USD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMG9933USD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG9933USD-13 part is unused and in its original packaging.
Return procedure for DMG9933USD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG9933USD-13 Tags

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SSM6N7002KFU,LF
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Diodes Incorporated

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