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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMG9N65CTI

Name: DMG9N65CTI
Brand: Diodes Incorporated
SKU: DMG9N65CTI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMG9N65CTI

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: DMG9N65CTI.pdf

Description:: MOSFET N-CH 650V 9A ITO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,945

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Product details

Overview

DMG9N65CTI from Diodes Incorporated is a 650V, 9.0A N-channel enhancement-mode power MOSFET in ITO-220AB package, optimized for high-voltage switching in DC-DC converters and motor control. It delivers R_DS(on) = 0.7Ω (typ) at V_GS = 10V, supports 30A pulsed drain current, and features low input capacitance (C_iss = 2310pF) for fast turn-on/turn-off.

For engineers reviewing the DMG9N65CTI datasheet, DMG9N65CTI pinout, DMG9N65CTI application, or DMG9N65CTI equivalent, key selection criteria include its 650V BVDSS rating, 8.84°C/W thermal resistance, AEC-Q101 qualification, RoHS-compliant lead-free finish, and body diode reverse recovery time of 570ns under dI/dt = 100A/µs.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and drift region design to achieve high breakdown voltage while maintaining low on-resistance. Its 650V V_DSS and ±30V V_GSS rating enable robust operation in off-line SMPS and industrial power supplies.

The device integrates a fast-recovery body diode (t_rr = 570ns, Q_rr = 4.17µC) and exhibits low gate charge (Q_g = 39nC), supporting high-frequency switching up to several hundred kHz without excessive drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650V - Withstands mains-referenced DC bus voltages in universal-input AC-DC adapters and PFC stages.
R_DS(on)	0.7Ω (typ) @ V_GS = 10V - Enables <1.5W conduction loss at 9A continuous, reducing heatsink requirements.
I_D (cont)	9.0A @ T_C = +25°C - Supports medium-power motor drives and 100–200W DC-DC converters.
C_iss	2310pF - Low input capacitance reduces gate drive power and improves switching efficiency above 100kHz.
t_rr	570ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectification.
Q_g	39nC - Enables clean 100ns-scale switching edges with standard 1A gate drivers.
R_θJC	8.84°C/W - Allows direct mounting to heatsinks for stable junction temperature below 150°C at full load.

Pinout & Package

Package: ITO-220AB - Molded plastic case with matte tin-plated copper leadframe; UL 94V-0 rated; 1.85g weight; thermally optimized for PCB-mounted heatsinking via tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power path connection	Electrically connected to metal tab - must be isolated from chassis unless referenced to system ground; primary thermal path to heatsink.
Source	Return path for load current	Common reference node for gate drive; connects directly to low-side switch or ground plane in half-bridge topologies.
Gate	Control terminal for channel modulation	High-impedance input requiring <39nC charge for full enhancement; sensitive to ESD and ringing - needs local RC snubber or gate resistor.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for under-hood motor drivers.
Low C_iss/C_oss ratio	C_iss = 2310pF, C_oss = 122pF - Improves hard-switching efficiency and reduces voltage overshoot during turn-off.
Fast body diode	t_rr = 570ns, Q_rr = 4.17µC - Reduces reverse recovery losses in flyback and LLC resonant converters.
Green compound packaging	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets automotive and industrial environmental compliance mandates.
High avalanche energy rating	E_AR = 260mJ - Withstands single-pulse inductive kick events in motor drive fault conditions without failure.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor driver in HVAC blower modules and power tools operating from 300–400V DC bus.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, handling 9A continuous load current with PWM frequencies up to 20kHz.

Use Value: 650V rating accommodates 400V bus transients; low R_DS(on) limits I²R heating during stall conditions.

Use Scenario: Primary-side switch in 150W offline flyback converter for industrial IoT gateway power supply.

IC Role / Device Role / Timing Role: Main power switch turning on/off at 65kHz with 520V V_DS stress during flyback reset.

Use Value: 39nC Q_g enables efficient gate driving with minimal driver IC dissipation; 570ns t_rr suppresses secondary-side diode oscillation.

Backlighting

Power Management

Use Scenario: LED string current regulator in commercial signage using boost topology with 350V output.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-side boost configuration, conducting during 70% duty cycle.

Use Value: Low C_oss (122pF) minimizes capacitive switching loss at 200kHz; 0.7Ω R_DS(on) ensures <1.2W conduction loss at 1.5A LED current.

Use Scenario: Main switch in active clamp forward converter for telecom base station auxiliary power.

IC Role / Device Role / Timing Role: Clamp switch managing transformer leakage energy during reset phase at 100kHz.

Use Value: 260mJ avalanche energy rating absorbs clamp energy spikes without derating; 8.84°C/W R_θJC allows compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK65ZFP	R_DS(on) = 0.75Ω (typ), Q_g = 32nC, TO-220FP package (shorter leads, lower L_GD)	Better suited for ultra-high-frequency ZVS/ZCS topologies due to lower gate charge and reduced parasitic inductance	Prefer when minimizing gate drive loss and layout-induced ringing is critical; requires verification of thermal pad isolation in TO-220FP footprint.
FQP9N65C	R_DS(on) = 0.95Ω (typ), C_iss = 2100pF, TO-3P package (higher R_θJC = 10°C/W)	Higher conduction loss but improved ruggedness in repetitive avalanche testing per JEDEC JESD24-11	Select for cost-sensitive industrial UPS designs where long-term reliability under repeated overcurrent events outweighs efficiency targets.

Compared with STP9NK65ZFP and FQP9N65C, DMG9N65CTI offers the lowest R_DS(on) among the three and AEC-Q101 qualification - making it optimal for automotive motor control where both efficiency and qualification compliance are mandatory.

Availability

DMG9N65CTI is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting, and power management applications requiring stable component supply, automotive-grade reliability, and high-voltage switching performance.

Supply support for DMG9N65CTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing and test facilities across Asia and North America.

The DMG9N65CTI belongs to Diodes' high-voltage power MOSFET product line, engineered for efficiency-critical industrial and automotive power conversion systems where 600–650V blocking capability and low conduction loss are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = +100°C, the DMG9N65CTI's continuous drain current is derated to approximately 5.2A, based on its thermal resistance (R_θJC = 8.84°C/W) and maximum junction temperature (T_J = +150°C). This value is derived from the linear derating curve in the datasheet, where ID decreases by ~0.07A/°C above +25°C.

Is the ITO-220AB package electrically insulated?

No - the metal tab (Drain) in the ITO-220AB package is electrically connected to the MOSFET's drain terminal. Electrical isolation from the heatsink or PCB must be achieved using insulating pads or shoulder washers. The package does not integrate internal isolation like some TO-247 variants with ceramic insulation.

Does DMG9N65CTI support gate drive voltages below 10V?

Yes - the gate threshold voltage (V_GS(th)) ranges from 3V to 5V, enabling partial enhancement at 5V logic-level drive. However, R_DS(on) rises significantly below 10V (e.g., ~2.1Ω at V_GS = 5V), so full enhancement and specified conduction performance require ≥10V gate drive.

How is the body diode utilized in practical designs?

In flyback and active-clamp forward converters, the DMG9N65CTI's body diode conducts during the transformer reset phase. Its 570ns reverse recovery time and 4.17µC Q_rr allow predictable commutation with minimal voltage overshoot when paired with appropriate snubbing and layout practices - unlike slower diodes that induce ringing or EMI.

DMG9N65CTI Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: ITO-220AB

DMG9N65CTI FAQ

1.How can I place an order for DMG9N65CTI through Aetrix?

Please submit a Request for Quotation (RFQ) for DMG9N65CTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMG9N65CTI reliable?

The price and inventory of DMG9N65CTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG9N65CTI is usually 5 days.

3.What payment methods are accepted for DMG9N65CTI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG9N65CTI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMG9N65CTI?

DMG9N65CTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMG9N65CTI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMG9N65CTI?

For technical support, including DMG9N65CTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG9N65CTI requirements.

6.How does Aetrix verify that DMG9N65CTI is sourced from the original manufacturer or authorized distributors?

All DMG9N65CTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG9N65CTI meets industry standards.

7.What is the process for return or replacement of DMG9N65CTI?

All DMG9N65CTI units undergo pre-shipment inspection (PSI). If there is an issue with DMG9N65CTI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMG9N65CTI part is unused and in its original packaging.

Return procedure for DMG9N65CTI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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